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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si5484DU_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.5431 19.4536 15.0558 48.9104 Ambient 2.1071 13.3151 178.1933 1.4793 Case 28.8945 1.1108 1.4224 1.4419 Case 686.5381 190.7991 1.3230 1.2716 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73728 Revision 13-Jan-06
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Si5484DU_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.1642 22.2142 16.1658 44.3978 Ambient 1.4684 10.2828 190.2917 1.4192
Case 1.7953 1.4822 571.1917 150.0745 Case 145.1296 578.5153 867.6748 38.2575
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 73728 Revision 13-Jan-06
Si5484DU_RC
Document Number: 73728 Revision 13-Jan-06
www.vishay.com

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