Dual High Speed Low-Side MOSFET Driver PRELIMINARY Features

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Dual High Speed Low-Side MOSFET Driver PRELIMINARY Features

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SC1302A/B/C family cost dual low-side MOSFET drivers. These drivers accept TTL-compatible inputs capable supplying high current outputs peak) external MOSFET's. Fast switching allows operation MHz. SC1302A/B/C available three configurations: dual non-inverting, dual inverting inverting plus non-inverting output. under-voltage-lock-out circuit guarantees that driver outputs when less than 4.5V (typ). internal temperature sensor shuts down driver event over temperature.
Dual High Speed Low-Side MOSFET Driver
PRELIMINARY Features
+4.5V +16.5V operation Fast rise fall times (20ns typical with 1000pf load) Dual MOSFET driver peak drive current 40ns propagation delay 8-pin SOIC MSOP packages Enable/disable control TTL-compatible input Under voltage lockout with hysterisis shutdown supply current Over temperature protection protection Dual inverting/non-inverting inverting/non-inverting configurations
SC1302A/B/C
Applications
Switch-mode power supplies Battery powered applications Solenoid motor drives
Typical Application Circuit
+12V load
10uF
0.1uF Load SC1302A Load
InputA
InputB
Preliminary, September 2002
www.semtech.com
SC1302A/B/C
POWER MANAGEMENT Absolute Maximum Ratings
Parameter Supply Voltage Operating Supply Voltage Input Voltages Peak Output Currents Enable Voltage Shutdown Voltage Continuous Power Dissipation Operating Temperature Range Thermal Resistance Junction Ambient (MSOP) Thermal Resistance Junction Ambient (SOIC) Storage Temperature Range Lead Temperature (Soldering)10 Symbol VINA, VINB OUTA, OUTB VSHDN TSTG TLEAD -0.3 -0.3 16.5 -0.3 -0.3 -0.3 Internally limited +150
PRELIMINARY
Exceeding specifications below result permanent damage device, device malfunction. Operation outside parameters specified Electrical Characteristics section implied.
Units °C/W °C/W
Electrical Characteristics
Unless otherwise specified: 25°C, 12V, VSHDN
Parameter Supply Current Quiescent Current Quiescent Current Quiescent Current Under-Voltage Lockout Threshold Voltage Hysteresis Enable Enable Voltage Disable Voltage Delay Output Delay Output Enable Input Current D_EN tD_DIS from high from high VSTART VSHDN =VEN =VINA =VINB VSHDN =VEN =VINA =VINB VSTART =VSHDN =VINA =VINB VSHDN Symbol Conditions Units
2002 Semtech Corp.
www.semtech.com
SC1302A/B/C
POWER MANAGEMENT Electrical Characteristics (Cont.)
Unless otherwise specified: 25°C, 12V, VSHDN
Parameter Input High Level Input Voltage Level Input Voltage Input Current Non-Inverting Input(s) SC1302A/C Inverting Input(s) SC1302B/C Output Output Peak Current IPK_SOURCE IPK_SINK Shutdown SHDN Input Voltage High SHDN Input Voltage SHDN Current Thermal Shutdown Over Temperature Trip Point Hysteresis TJ_OT VSHDN VSHDN SHDN VSHDN VOUT 0.5V, 10uS VOUT 0.5V, 10uS 1600 1600 Symbol Conditions Units
PRELIMINARY
Electrical Characteristics
Unless otherwise specified: 25°C, 12V, 1000pF
Parameter Rise time Fall time Propagation delay time Propagation delay time Symbol Conditions Timing Diagram Timing Diagram Timing Diagram Timing Diagram Units
2002 Semtech Corp.
www.semtech.com
SC1302A/B/C
POWER MANAGEMENT Timing Diagram
PRELIMINARY
Input
-inverting tput SC1302A Invertin tput SC1302B
2002 Semtech Corp.
www.semtech.com
SC1302A/B/C
POWER MANAGEMENT Configuration
View SC1302A (Dual Non-Inverting)
SHDN OUTA OUTB
PRELIMINARY Ordering Information
Part Number SC1302AISTR SC1302BISTR SC1302CISTR SC1302AIMSTR MSOP-8 -40°C +85°C SOIC-8 -40°C +85°C Package Temp. Range
(8-Pin SOIC MSOP)
Note: Only available tape reel packaging. reel contains 2500 devices.
View SC1302B (Dual Inverting)
View SC1302C (Inverting Non-Inverting)
SHDN OUTA OUTB
SHDN OUTA OUTB
(8-Pin SOIC)
(8-Pin SOIC)
Descriptions
SC1302A SC1302B SC1302C Function Enable/disable control. When driven low, both outputs low. When left open, both outputs low. Enable both drivers tying voltage greater than TTL-compatible input driver When left open, low. Ground. TTL-compatible input driver When left open, low. Output gate drive external MOSFET. Supply: +4.5V +16.5V supply. During UVLO, outputs held low. Output gate drive external MOSFET. Shutdown pin. Apply voltage from enable device. Pull below 0.3V low-power shut down.
OUTB OUTA SHDN
OUTB OUTA SHDN
OUTB OUTA SHDN
2002 Semtech Corp.
www.semtech.com
SC1302A/B/C
POWER MANAGEMENT Block Diagrams
PRELIMINARY
BIAS
DRIVER
OUTA BIAS
DRIVER
OUTA
SHDN
BANDGAP SHDN
BANDGAP
BIAS
DRIVER
BIAS
OUTB
DRIVER
OUTB
SC1302A
SC1302B
BIAS
DRIVER
OUTA
SHDN
BANDGAP
BIAS
DRIVER
OUTB
SC1302C
2002 Semtech Corp.
www.semtech.com
SC1302A/B/C
POWER MANAGEMENT Applications Information
SC1302A/B/C high speed, high peak current dual MOSFET driver. designed drive power MOSFETs with ultra-low rise/fall time propagation delays. switching frequency controllers increased reduce power converters volume cost, fast rise fall times necessary minimize switching losses. While discrete solution achieve reasonable drive capability, implementing delay other housekeeping functions necessary safe operation become cumbersome costly. SC1032A/B/C presents total solution high-speed, high power density applications. Wide input supply range 4.5V 16.5V allows battery powered applications well distributed power systems. Supply Bypass Layout 4.7µF 10µF tantalum bypass capacitor with (equivalent series resistance) additional 0.1µF ceramic capacitor parallel recommended supply bypass control switching supply transients. with high speed, high current circuit, proper layout critical achieving optimum performance SC1302A/B/C. Attention should paid proper placement driver, switching MOSFET bypass capacitors. driver should placed close possible external MOSFET's eliminate possibility oscillation caused trace inductance MOSFET gate capacitance. resistor range could used series with gate drive damp ringing drive output path short enough. bypass capacitors should also placed closely between driver. Drive Capability Power Dissipation SC1302A/B/C able deliver 1.6A peak current driving capacitive loads, such MOSFET's. Fast switching MOSFET's significantly reduces switching losses high frequency applications. Thermal stress reduced system reliability improved. simplicity, assume that gate capacitance MOSFET constant. power delivered from power supply estimated based this simplification.
2002 Semtech Corp. www.semtech.com
PRELIMINARY
energy needed charge capacitor given
where load capacitance output voltage swing driver.
During turn off, same amount energy dumped ground. Therefore, energy dissipated switching cycle
ETOTAL
power dissipation gate driving actions given
PGATE
where, switching frequency. with =12V, C=1nF f=200kHz, power dissipation output
PGATE (200kHz) (1nF) (12)2 29mW
corresponding supply current
PGATE 29mW 2.4mA
Thermal Information driver's junction temperature must kept within rated limit time. application system effectively remove heat generated driver order proper functions performance. junction temperature reaches internal protection circuit will triggered shut down gate driver. power dissipation SC1302A/B/C should derated according following formula:
Power Dissipation 125°C
where ambient temperature.
SC1302A/B/C
POWER MANAGEMENT Outline Drawing MSOP-8 PRELIMINARY
Land Pattern MSOP-8
2002 Semtech Corp.
www.semtech.com
SC1302A/B/C
POWER MANAGEMENT Outline Drawing SO-8 PRELIMINARY
Land Pattern SO-8
Contact Information
Semtech Corporation Power Management Products Division Flynn Rd., Camarillo, 93012 Phone: (805)498-2111 (805)498-3804
2002 Semtech Corp.
www.semtech.com

Dual High Speed Low-Side MOSFET Driver PRELIMINARY Features

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