REJ03G1275-0200 Rev.2.00 2005 on-resistance RDS(on) (VGS drive cu
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RQK0302GGDQA
REJ03G1275-0200 Rev.2.00 2005
on-resistance RDS(on) (VGS drive current High speed switching gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Source Gate Drain
Note:
Marking "GG".
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS ID(Pulse) Note1 Note2 Ratings +150 Unit
Storage temperature Tstg Notes: duty cycle When using alumina ceramic board (12.5
Rev.2.00, 2005, page
RQK0302GGDQA
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Drain source leak current Gate source cutoff voltage Drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn delay time Rise time Turn delay time Fall time Total gate charge Gate source charge Gate drain charge Body drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) Unit Test conditions ±100 VNote3 VNote3 VNote3
2.7A Note3
Rev.2.00, 2005, page
RQK0302GGDQA
Main Characteristics
Maximum Channel Power Dissipation Curve
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited RDS(on)
25°C
0.01 0.01
Ambient Temperature (°C)
*When using alumina ceramic board (12.5
Drain Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
25°C 75°C -25°C
Pulse Test 25°C
Drain Source Voltage
Gate Source Voltage
Gate Source Cutoff Voltage
Gate Source Cutoff Voltage VGS(off)
Typical Transfer Characteristics
Pulse Test 75°C
Case Temperature
Drain Current
0.01 25°C -25°C 0.001
Pulse Test
0.0001
Gate Source Voltage
Case Temperature (°C)
Rev.2.00, 2005, page
RQK0302GGDQA
Drain Source Saturation Voltage Gate Source Voltage
Pulse Test 25°C
Drain Source Saturation Voltage VDS(on)
Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Pulse Test 25°C
0.03
0.01
Gate Source Voltage Static Drain Source State Resistance Temperature
Drain Current Static Drain Source State Resistance Temperature
Drain Source State Resistance RDS(on)
Pulse Test
Drain Source State Resistance RDS(on)
Pulse Test
Case Temperature (°C)
Case Temperature (°C)
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance Drain Current
Zero Gate Voltage Drain current Case Temperature
1000 Pulse Test
Forward Transfer Admittance |yfs|
-25°C 25°C
75°C
Pulse Test
Drain Current
Case Temperature (°C)
Rev.2.00, 2005, page
RQK0302GGDQA
Dynamic Input Characteristics Drain Source Voltage
25°C
Switching Characteristics Gate Source Voltage
1000
Switching Time (ns)
25°C td(off)
td(on)
0.01
Gate Charge (nC)
Drain Current
Typical Capacitance Drain Source Voltage
1000 Coss
Input Capacitance Gate Source Voltage
Ciss, Coss, Crss (pF)
Ciss
Ciss (pF)
Crss
Drain Source Voltage Reverse Drain Current Source Drain Voltage
Gate Source Voltage Body-Drain Diode Forward Voltage Case Temperature
Pulse Test 25°C
Body-Drain Diode Forward Voltage VSDF
Reverse Drain Current
Source Drain Voltage
Case Temperature (°C)
Rev.2.00, 2005, page
RQK0302GGDQA
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) MPAK(T)V MASS[Typ.] 0.011g
Reference Dimension Millimeters Symbol
Section
Pattern terminal position areas
0.35 1.35 0.35 0.15 0.25
0.25 0.42 0.13 0.11 0.95
0.15 1.65 0.75 0.55 0.65 0.05 0.55 1.05
1.95
Ordering Information
Part Name RQK0302GGDQATL-E Quantity 3000 pcs. Shipping Container reel, Emboss taping
Rev.2.00, 2005, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
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