REJ03G1274-0200 Rev.2.00 2005 on-resistance RDS(on) (VGS -0.9 dri

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REJ03G1274-0200 Rev.2.00 2005 on-resistance RDS(on) (VGS -0.9 dri

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RQJ0603LGDQA
REJ03G1274-0200 Rev.2.00 2005
on-resistance RDS(on) (VGS -0.9 drive current High speed switching -4.5 gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Source Gate Drain
Note:
Marking "LG".
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS ID(Pulse) Note1 Note2 Ratings -1.8 -4.5 -1.8 +150 Unit
Storage temperature Tstg Notes: duty cycle When using alumina ceramic board (12.5
Rev.2.00, 2005, page
RQJ0603LGDQA
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Gate source leak current Gate source leak current Drain source leak current Gate source cutoff voltage Drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn delay time Rise time Turn delay time Fall time Total gate charge Gate source charge Gate drain charge Body drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) -1.0 -0.8 -0.2 -2.0 Unit Test conditions +100 -100 -0.9 VNote3 -0.9 -4.5 VNote3 -0.9 VNote3 -0.5
-1.8A -1.5 Note3
Rev.2.00, 2005, page
RQJ0603LGDQA
Main Characteristics
Maximum Channel Power Dissipation Curve
-1000
Maximum Safe Operation Area
Channel Dissipation
Drain Current
-100 Operation this area limited RDS(on)
-0.1 -0.01 -0.01
25°C
-0.1
-100
Ambient Temperature (°C)
*When using alumina ceramic board (12.5
Drain Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics
-1.0 Pulse Test
-1.0 -0.8
-2.6
Pulse Test 25°C -2.5
Drain Current
Drain Current
-0.8
-0.6
-2.4
-0.6 75°C 25°C -25°C
-0.4
-2.3
-0.4
-0.2
-2.2 -2.1
-0.2
Drain Source Voltage
Gate Source Voltage
Gate Source Cutoff Voltage
Typical Transfer Characteristics
Gate Source Cutoff Voltage VGS(off)
-0.1 -2.5
Case Temperature
Pulse Test
Drain Current
-2.0 -1.5
-0.01
75°C
25°C -25°C
-0.001
-1.0 Pulse Test -0.5
-0.1
-0.0001 -0.5 -1.5 -2.5
Gate Source Voltage
Case Temperature (°C)
Rev.2.00, 2005, page
RQJ0603LGDQA
Drain Source Saturation Voltage Gate Source Voltage
Pulse Test 25°C -0.4
Drain Source Saturation Voltage VDS(on)
Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
-0.5
Pulse Test 25°C
-0.3
-0.2
-0.1
0.03
0.01 -0.1
-0.3
-1.0
Gate Source Voltage
Drain Current
Static Drain Source State Resistance Temperature
Static Drain Source State Resistance Temperature
Drain Source State Resistance RDS(on)
Drain Source State Resistance RDS(on)
Pulse Test -4.5 -1.0 -0.5 -0.2
Pulse Test
Case Temperature (°C)
Case Temperature (°C)
Zero Gate Voltage Drain current Case Temperature
Pulse Test -100
Pulse Test -25°C
75°C
25°C
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance Drain Current
Forward Transfer Admittance |yfs|
-1000
-0.1
-0.3
-1.0
Drain Current
Case Temperature (°C)
Rev.2.00, 2005, page
RQJ0603LGDQA
Dynamic Input Characteristics
Drain Source Voltage Gate Source Voltage
1000 25°C td(off) td(on) -0.01
Switching Characteristics
Switching Time (ns)
-1.8 25°C
-100
-0.1
-1.0
Gate Charge (nC)
Drain Current
Typical Capacitance Drain Source Voltage
1000 Ciss
Input Capacitance Gate Source Voltage
Ciss, Coss, Crss (pF)
Coss Crss
Ciss (pF)
Drain Source Voltage Reverse Drain Current Source Drain Voltage
-1.0
Gate Source Voltage Body-Drain Diode Forward Voltage Case Temperature
-0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2
Pulse Test 25°C -0.8 -0.6 -0.4
-0.2
Body-Drain Diode Forward Voltage VSDF
Reverse Drain Current
-0.4
-0.8
-1.2
-1.6
-2.0
Source Drain Voltage
Case Temperature (°C)
Rev.2.00, 2005, page
RQJ0603LGDQA
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) MPAK(T)V MASS[Typ.] 0.011g
Reference Dimension Millimeters Symbol
Section
Pattern terminal position areas
0.35 1.35 0.35 0.15 0.25
0.25 0.42 0.13 0.11 0.95
0.15 1.65 0.75 0.55 0.65 0.05 0.55 1.05
1.95
Ordering Information
Part Name RQJ0603LGDQATL-E Quantity 3000 pcs. Shipping Container reel, Emboss taping
Rev.2.00, 2005, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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2005. Renesas Technology Corp., rights reserved. Printed Japan.
Colophon .4.0

REJ03G1274-0200 Rev.2.00 2005 on-resistance RDS(on) (VGS -0.9 dri

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