REJ03G1244-0200 Rev.2.00 Jun.22.2005 Capable -4.5 gate drive driv

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REJ03G1244-0200 Rev.2.00 Jun.22.2005 Capable -4.5 gate drive driv

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HAT1139H
REJ03G1244-0200 Rev.2.00 Jun.22.2005
Capable -4.5 gate drive drive current High density mounting on-resistance RDS(on) typ.
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
Source Gate Drain
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: duty cycle Drive operation 25°C Drive operation 25°C Symbol VDSS VGSS ID(pulse) Note2 Note3 Tstg
Note1
Ratings -120 +150
Unit
Rev.2.00
Jun. 2005,
page
HAT1139H
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) -1.0 10.0 3200 -0.91 ±0.1 -2.5 14.5 -1.19 Unit Test Conditions -20/+10 Note4 -4.5 Note4 Note4 0.67 Note4 diF/
Rev.2.00
Jun. 2005,
page
HAT1139H
Main Characteristics
Power Temperature Derating
-1000 -100 -1.0 -0.1 -0.01
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited DS(on)
25°C shot Pulse -0.001 -0.1 -0.3
-100
Case Temperature
(°C)
Drain Source Voltage
Typical Output Characteristics
-3.4 -4.5 -3.2 -3.1
Typical Transfer Characteristics
Pulse Test
Drain Current
-2.9
-3.0
-2.8
Drain Current
-2.7 -2.6
75°C 25°C -25°C
-2.5
Pulse Test
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
VDS(on)
-0.4 Pulse Test
Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Pulse Test -4.5
-0.3
Drain Source Voltage
-0.2 -0.1
-100
-1000
Gate Source Voltage
Drain Current
Rev.2.00
Jun. 2005,
page
HAT1139H
Static Drain Source State Resistance Temperature
Forward Transfer Admittance |yfs|
Pulse Test -4.5 -25°C 25°C 75°C
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance Drain Current
Pulse Test
-0.1 -0.3 -100
Case Temperature
(°C)
Drain Current
Body-Drain Diode Reverse Recovery Time
1000 10000
Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
Capacitance (pF)
Ciss
1000
Coss
Crss
di/dt A/µs 25°C -0.1 -100
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Drain Source Voltage
Switching Characteristics
1000 td(off)
Switching Time (ns)
Gate Source Voltage
td(on) duty -0.1 -100
Gate Charge
(nc)
Drain Current
Rev.2.00
Jun. 2005,
page
HAT1139H
Reverse Drain Current Source Drain Voltage
Reverse Drain Current
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0
Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
0.05
0.01
0.02 0.01
c(t) 8.33°C/ 25°C
0.001
1000
10000
Pulse Width Switching Time Test Circuit Monitor D.U.T. Vout td(on) td(off) Vout Monitor Waveform
Rev.2.00
Jun. 2005,
page
HAT1139H
Package Dimensions
JEITA Package Code
SC-100
RENESAS Code
PTZZ0005DA-A
Package Name LFPAK
MASS[Typ.] 0.080g
Unit:
0.25 -0.03
+0.05
3.95
-0.3
+0.1
+0.03 0.07 -0.04
0.75 1.27 0.10 0.40 0.06
0.25
-0.20
+0.25
0.20 -0.03
+0.05
(Ni/Pd/Au plating)
Ordering Information
Part Name HAT1139H-EL-E Quantity 2500 Taping Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.2.00
Jun. 2005,
page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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2005. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G1244-0200 Rev.2.00 Jun.22.2005 Capable -4.5 gate drive driv

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