REJ03G1227-0300 Rev.3.00 Jun. 2005 on-resistance RDS(on) typ. -4.

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REJ03G1227-0300 Rev.3.00 Jun. 2005 on-resistance RDS(on) typ. -4.

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HAT1089C
REJ03G1227-0300 Rev.3.00 Jun. 2005
on-resistance RDS(on) typ. -4.5 drive current. gate drive devices. High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband
Source Drain Drain Drain Drain Gate
Absolute Maximum Ratings
25°C)
Item Drain Source voltage Gate Source voltage Drain current Drain peak current Body Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle When using glass epoxy board. (FR4 1.6mm), 25°C Symbol VDSS VGSS (pulse)Note1 PchNote Tstg Ratings +150 Unit
Rev.3.00, Jun. 2005, page
HAT1089C
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Gate Source breakdown voltage Gate Source leakage current Drain Source leakage current Gate Source cutoff voltage Drain Source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate Source charge Gate Drain charge Turn delay time Rise time Turn delay time Fall time Body Drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Ciss Coss Crss td(on) td(off) Min. -0.4 Typ. -0.8 Max. -1.4 -1.1 Unit Test Conditions ±100 Note3 -4.5 Note3 -2.5 Note3 Note3 -4.5 -4.5
Rev.3.00, Jun. 2005, page
HAT1089C
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area
-100
When using board. shot pulse, 25°C
Power Dissipation
Test condition. When using glass epoxy board. (FR4
Drain Current
-0.1
Operation this area limited RDS(on)
-0.01
-0.001 -0.001 -0.01
-0.1
-100
Ambient Temperature (°C)
Drain Source Voltage Typical Transfer Characteristics
Pulse Test 75°C 25°C
Typical Output Characteristics
-10.0 -4.5 -3.0
Pulse Test
-2.5
Drain Current
Drain Current
-2.2 -2.0
-25°C
-1.8 -1.6 -1.4
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
Pulse Test
Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Drain Source Saturation Voltage VDS(on) (mV)
-400
-300
-2.5
-200 -100 -0.5
-4.5
Pulse Test -0.1
Gate Source Voltage
Drain Current
Rev.3.00, Jun. 2005, page
HAT1089C
Static Drain Source State Resistance Temperature
-2.5
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Forward Transfer Admittance Drain Current
-25°C 25°C 75°C
-0.5
-4.5 -0.5 Pulse Test
0.01 -0.01
Pulse Test
Case Temperature
(°C)
-0.1 -1.0 Drain Current
Dynamic Input Characteristics
1000
Typical Capacitance Drain Source Voltage
Drain Source Voltage
Gate Source Voltage
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
(nC)
1000
Drain Source Voltage
Reverse Drain Current Source Drain Voltage
Switching Characteristics
-4.5 25°C
Switching Time (ns)
Reverse Drain Current
td(off)
td(on)
Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0
-0.1
-1.0
Source Drain Voltage
Drain Current
Rev.3.00, Jun. 2005, page
HAT1089C
Switching Time Test Circuit Monitor D.U.T. -4.5 Vout td(on) td(off) Vout Monitor Waveform
Rev.3.00, Jun. 2005, page
HAT1089C
Package Dimensions
JEITA Package Code RENESAS Code PWSF0006JA-A Package Name CMFPAK-6 CMFPAK-6V MASS[Typ.] 0.0065g
Reference Symbol
Dimension Millimeters
Pattern terminal position areas
0.15 2.05 0.15
0.22 0.13 0.11 0.65
0.01 0.79 0.15 2.15 0.45 0.05 0.05 0.35
Section
1.65
Ordering Information
Part Name HAT1089C-EL-E Quantity 3000 Shipping Container Taping
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.3.00, Jun. 2005, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
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Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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REJ03G1227-0300 Rev.3.00 Jun. 2005 on-resistance RDS(on) typ. -4.

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