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REJ03G1203-0100 Rev.1.00 25.2005 on-resistance leakage current Hi
Top Searches for this datasheetH5N2514P REJ03G1203-0100 Rev.1.00 25.2005 on-resistance leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) Gate Drain (Flange) Source Absolute Maximum Ratings 25°C) Item Drain Source voltage Gate Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse)Note1 (pulse)Note1 IAPNote3 EARNote3 Note2 ch-c Tstg Ratings 76.5 0.625 +150 Unit °C/W Rev.1.00 25.2005 page H5N2514P Electrical Characteristics 25°C) Item Drain Source breakdown voltage Zero Gate voltage Drain current Gate Source leak current Gate Source cutoff voltage Forward transfer admittance Static Drain Source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate Source charge Gate Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.025 5500 1.10 ±0.1 0.030 1.65 Unit Test conditions Note4 VNote4 Note4 diF/dt A/µs Rev.1.00 25.2005 page H5N2514P Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P TO-3PV MASS[Typ.] 5.0g Unit: 15.6 14.9 19.9 18.0 5.45 5.45 Ordering Information Part Name H5N2514P-E Quantity Plastic magazine Shipping Container Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product. Rev.1.00 25.2005 page Sales Strategic Planning Div. Keep safety first your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. 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