REJ03G1158-1200 (Previous: ADE-208-440J) Rev.12.00 2005 on-resist
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HAT2022R
REJ03G1158-1200 (Previous: ADE-208-440J) Rev.12.00 2005
on-resistance Capable gate drive drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV>
Source Gate Drain
Rev.12.00 2005 page
HAT2022R
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS (pulse)
Note
Value
Unit
Note
Storage temperature Tstg +150 Notes: duty cycle When using glass epoxy board (FR4 mm),
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol (BR) (BR) IGSS IDSS (off) (on) (on) |yfs| Ciss Coss Crss (on) (off) 0.012 0.017 1450 0.015 0.025 Unit diF/dt A/µs
Note
Test Conditions ±100 Note
Note
Note
Rev.12.00 2005 page
HAT2022R
Main Characteristics
Power Temperature Derating
Test Condition: When using glass epoxy board (FR4 mm),
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited (on)
0.03 25°C shot Pulse 0.01
Ambient Temperature
(°C)
Drain Source Voltage
Note When using glass epoxy board (FR4
Typical Output Characteristics
Typical Transfer Characteristics
Pulse Test
Drain Current
Pulse Test
Drain Current
25°C 75°C -25°C
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
(on)
Pulse Test
Static Drain Source State Resistance Drain Current
Drain Source State Resistance (on)
Pulse Test 0.05
Drain Source Voltage
0.02 0.01
0.005
0.002
Gate Source Voltage
Drain Current
Rev.12.00 2005 page
HAT2022R
Static Drain Source State Resistance Temperature
0.05 Pulse Test 0.04
Static Drain Source State Resistance (on)
Forward Transfer Admittance Drain Current
Forward Transfer Admittance |yfs|
-25°C 75°C Pulse Test 25°C
0.03
0.02
0.01
Case Temperature
(°C)
Drain Current Typical Capacitance Drain Source Voltage
10000 3000 Ciss 1000 Coss Crss
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
25°C
Capacitance (pF)
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
1000 td(off) td(on)
Switching Time (ns)
Drain Source Voltage
Gate Source Voltage
duty
Gate Charge
(nc)
Drain Current
Rev.12.00 2005 page
HAT2022R
Reverse Drain Current Source Drain Voltage
Reverse Drain Current
Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
0.05
0.02 0.01
83.3°C/W, 25°C When using glass epoxy board (FR4 1000 10000
0.01
0.001
0.0001
Pulse Width
Switching Time Test Circuit
Switching Time Waveform
Monitor D.U.T.
Vout Monitor Vout
td(on)
td(off)
Rev.12.00 2005 page
HAT2022R
Package Dimensions
JEITA Package Code P-SOP8-3.95 4.9-1.27 RENESAS Code PRSP0008DD-D Package Name FP-8DAV MASS[Typ.] 0.085g
Index mark
Terminal cross section (Ni/Pd/Au plating)
NOTE) DIMENSIONS "*1(Nom)" "*2" INCLUDE MOLD FLASH. DIMENSION "*3" DOES INCLUDE TRIM OFFSET.
Reference Symbol
Dimension Millimeters 4.90 3.95
0.10
0.14
0.25 1.75
0.34
0.40
0.46
0.15
0.20
0.25
5.80 6.10 1.27 0.25 0.75 0.40 0.60 1.08 1.27 6.20
Detail
Ordering Information
Part Name Quantity Shipping Container HAT2022R-EL-E 2500 Taping Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.12.00 2005 page
Sales Strategic Planning Div.
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