REJ03G1151-0600 (Previous: ADE-208-754D) Rev.6.00 2005 on-resista

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REJ03G1151-0600 (Previous: ADE-208-754D) Rev.6.00 2005 on-resista

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HAT1043M
REJ03G1151-0600 (Previous: ADE-208-754D) Rev.6.00 2005
on-resistance drive current High density mounting gate drive device driven from source
Outline
RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6)
Source Gate Drain
Rev.6.00 2005 page
HAT1043M
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS (pulse) Note
Note
Value -4.4 -17.6 -4.4 1.05 +150
Unit
(pulse) Note (continuous) Tstg
Note
Notes: duty cycle When using alumina ceramic board mm), 25°C When using alumina ceramic board mm), 25°C
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol (BR) IGSS IDSS (off) (on) (on) |yfs| Ciss Coss Crss (on) (off) -0.4 -0.95 ±0.1 -1.4 -1.23 Unit -4.4 -4.4 diF/dt A/µs Test Conditions Note -4.5 -2.5 Note -4.5 -4.4 -4.5
Note
Rev.6.00 2005 page
HAT1043M
Main Characteristics
Power Temperature Derating
-100
Maximum Safe Operation Area
-0.3 -0.1
Channel Dissipation
Drain Current
Operation this area limited
(on)
-0.03 25°C shot pulse -0.01 -0.1 -0.3
-100
Ambient Temperature
(°C)
Drain Source Voltage
Note When using alumina ceramic board
Test Condition: When using alumina ceramic board mm),
Typical Output Characteristics
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
-2.5
Drain Current
-25°C 75°C 25°C
-1.5
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
Pulse Test
Static Drain Source State Resistance Drain Current
Drain Source State Resistance (on)
1000 Pulse Test
Drain Source Saturation Voltage (on)
-0.5
-0.4
-2.5
-0.3 -0.2
-4.5
-0.1
-0.1 -0.2
-0.5
Gate Source Voltage
Drain Current
Rev.6.00 2005 page
HAT1043M
Static Drain Source State Resistance Temperature Forward Transfer Admittance Drain Current
Static Drain Source State Resistance (on)
Forward Transfer Admittance |yfs|
Pulse Test -2.5 -4.5
25°C -0.1 -0.3 Pulse Test 75°C -25°C
Case Temperature
(°C)
Drain Current Typical Capacitance Drain Source Voltage
3000 1000 Ciss Coss Crss
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
Capacitance (pF)
25°C -0.5
-0.1 -0.2
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
Switching Time (ns)
1000 td(on) td(off)
Drain Source Voltage
-4.4
Gate Source Voltage
-4.5 duty -0.1 -0.2 -0.5
Gate Charge
(nc)
Drain Current
Rev.6.00 2005 page
HAT1043M
Reverse Drain Current Source Drain Voltage
Reverse Drain Current
Pulse Test
-0.4 -0.8 -1.2 -1.6 -2.0
Source Drain Voltage
VSDF
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
0.05
0.02 0.01
0.01
119°C/W, 25°C When using alumina ceramic board
0.001
0.0001
1000
10000
Pulse Width
Switching Time Test Circuit
Monitor D.U.T. Vout Monitor
Switching Time Waveform
Vout td(on) td(off)
Rev.6.00 2005 page
HAT1043M
Package Dimensions
JEITA Package Code SC-95 Modified RENESAS Code PTSP0006FA-A Package Name TSOP-6 TSOP-6V MASS[Typ.] 0.012g
Reference Symbol Dimension Millimeters
Section
Pattern terminal position areas
0.25 1.45
0.25 0.32 0.13 0.11 2.95
0.15 1.75 0.05 0.05 0.45
Ordering Information
Part Name Quantity Shipping Container HAT1043M-EL-E 3000 Taping Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.6.00 2005 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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2005. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G1151-0600 (Previous: ADE-208-754D) Rev.6.00 2005 on-resista

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