REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 2005 on-resist

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REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 2005 on-resist

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H7N0307AB
REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 2005
on-resistance (on) typ. drive current gate drive device driven from source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
Gate Drain (Flange) Source
Rev.3.00 2005 page
H7N0307AB
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C Symbol VDSS VGSS (pulse)
Note
Value 1.39 +150
Unit °C/W
ch-c Tstg
Note
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol (BR) (BR) IGSS IDSS (off) (on) |yfs| Ciss Coss Crss (on) (off) 2500 0.92 11.5 Unit Test Conditions ±100 Note Note 0.33 diF/dt A/µs
Note
Note
Rev.3.00 2005 page
H7N0307AB
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited RDS(on) 25°C shot Pulse
0.01
Case Temperature
(°C)
Drain Source Voltage
Typical Output Characteristics
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
25°C 75°C -25°C
Drain Current
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
0.20 Pulse Test 0.16
Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Pulse Test
VDS(on)
Drain Source Voltage
0.12
0.08 0.04
Gate Source Voltage
Drain Current
Rev.3.00 2005 page
H7N0307AB
Static Drain Source State Resistance Temperature
Forward Transfer Admittance |yfs|
Pulse Test 25°C -25°C 75°C
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance Drain Current
Pulse Test
Case Temperature
(°C)
Drain Current Typical Capacitance Drain Source Voltage
10000 3000 1000 Coss Crss Ciss
Body-Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time (ns)
25°C
Capacitance (pF)
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
Switching Time (ns)
td(on) td(off)
Drain Source Voltage
Gate Source Voltage
duty
Gate Charge
(nc)
Drain Current
Rev.3.00 2005 page
H7N0307AB
Reverse Drain Current Source Drain Voltage
Reverse Drain Current
Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
1.38°C/W, 25°C
0.05
0.02
0.03
puls
0.01
Pulse Width
Switching Time Test Circuit
Switching Time Waveform
Monitor D.U.T.
Vout Monitor Vout
td(on)
td(off)
Rev.3.00 2005 page
H7N0307AB
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB TO-220ABV
MASS[Typ.] 1.8g
Unit:
11.5
2.79
10.16 -0.08
+0.2 -0.1
+0.1
4.44 1.26 0.15
18.5
15.0
1.27
0.76
14.0
2.54
2.54
Ordering Information
Part Name Quantity Shipping Container H7N0307AB-E (Sack) Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.3.00 2005 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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2005. Renesas Technology Corp., rights reserved. Printed Japan.
Colophon .3.0

REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 2005 on-resist

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