Built Biasing Circuit Amplifier REJ03G0825-0400 (Previous ADE-208

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Built Biasing Circuit Amplifier REJ03G0825-0400 (Previous ADE-208

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BB302M
Built Biasing Circuit Amplifier
REJ03G0825-0400 (Previous ADE-208-572B) Rev.4.00 Aug.10.2005
Built Biasing Circuit; reduce using parts cost board space. noise characteristics; typ. MHz) Withstanding ESD; Built absorbing diode. Withstand 240V C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4)
Source Gate1 Gate2 Drain
Notes:
Marking BB302M individual type number RENESAS BBFET.
Rev.4.00 2005 page
BB302M
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate1 source voltage Gate2 source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VG1S VG2S Tstg Ratings +150 Unit
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate1 source breakdown voltage Gate2 source breakdown voltage Gate1 source cutoff current Gate2 source cutoff current Gate1 source cutoff voltage Gate2 source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| Ciss Coss Crss 0.017 +100 ±100 0.04 Unit Test conditions VG1S VG2S VG2S VG1S VG1S VG2S VG2S VG1S VG2S VG1S VG2S VG2S VG2S VG2S
Rev.4.00 2005 page
BB302M
Main Characteristics
Test Circuit Operating Items (ID(op) |yfs|, Ciss, Coss, Crss, Gate Gate
Drain
Source
Application Circuit VAGC BBFET Output
Input
Rev.4.00 2005 page
BB302M
Maximum Channel Power Dissipation Curve Channel Power Dissipation (mW)
Typical Output Characteristics
Drain Current (mA)
VG2S
Ambient Temperature (°C)
Drain Source Voltage
Drain Current Gate2 Source Voltage
Drain Current Gate1 Voltage
Drain Current (mA)
Drain Current (mA)
VG2S
Gate2 Source Voltage VG2S
Gate1 Voltage
Drain Current Gate1 Voltege
Drain Current Gate1 Voltege
VG2S
Drain Current (mA)
Drain Current (mA)
VG2S
Gate1 Voltage
Gate1 Voltage
Rev.4.00 2005 page
BB302M
Forward Transfer Admittance Gate1 Voltage Forward Transfer Admittance Gate1 Voltage
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance |yfs| (mS)
VG2S
VG2S
Gate1 Voltage
Gate1 Voltage
Forward Transfer Admittance Gate1 Voltage
Power Gain Gate Resistance
Forward Transfer Admittance |yfs| (mS)
Power Gain (dB)
VG2S
VG2S 1000
Gate1 Voltage
Gate Resistance
Noise Figure Gate Resistance
VG2S
Power Gain Drain Current
Noise Figure (dB)
Power Gain (dB)
VG2S variable
1000
Gate Resistance
Drain Current (mA)
Rev.4.00 2005 page
BB302M
Noise Figure Drain Current
VG1= VG2S variable
Drain Current Gate Resistance
Noise Figure (dB)
Drain Current (mA)
VG2S 1000
Drain Current (mA) Gain Reduction Gate2 Source Voltage
VG2S
Gate Resistance
Input Capacitance Gate2 Source Voltage
Gain Reduction (dB)
Input Capacitance Ciss (pF)
Gate2 Source Voltage VG2S
Gate2 Source Voltage VG2S
Rev.4.00 2005 page
BB302M
Parameter Frequency
-1.5 -120° -90° 180° 150°
Parameter Frequency
120°
Scale: div.
-150°
-30°
-60°
Test Condition VG2S 1000 step)
Test Condition VG2S 1000 step)
Parameter Frequency
120°
Parameter Frequency
Scale: 0.01 div.
150°
180°
-150° -30° -120° -60° -90° -1.5
Test Condition VG2S 1000 step)
Test Condition VG2S 1000 step)
Rev.4.00 2005 page
BB302M
Parameter
(VDS VG2S 120k,
f(MHz) 1000 MAG. 0.988 0.986 0.979 0.964 0.948 0.939 0.920 0.904 0.885 0.864 0.848 0.826 0.808 0.789 0.773 0.755 0.735 0.721 0.703 0.677 ANG. -5.2 -10.4 -16.0 -21.5 -26.9 -32.0 -37.3 -42.3 -47.1 -51.7 -56.5 -60.9 -65.0 -69.4 -73.7 -77.9 -82.1 -86.3 -90.7 -93.9 MAG. 2.13 2.13 2.12 2.08 2.04 2.00 1.95 1.91 1.86 1.81 1.76 1.70 1.66 1.61 1.56 1.51 1.47 1.42 1.39 1.34 ANG. 174.1 167.9 161.6 155.2 149.1 143.0 137.3 131.5 125.7 120.1 115.1 110.1 104.7 100.3 95.4 90.5 85.9 81.3 76.9 72.4 MAG. 0.00052 0.00087 0.00156 0.00226 0.00254 0.00339 0.00335 0.00338 0.00351 0.00347 0.00355 0.00300 0.00289 0.00246 0.00211 0.00166 0.00165 0.00123 0.00176 0.00204 ANG. 90.0 72.5 79.4 78.4 71.0 72.0 59.0 66.3 62.2 56.6 61.5 61.4 51.1 57.6 70.0 77.5 114.5 114.5 145.8 164.0 MAG. 0.985 0.993 0.992 0.990 0.987 0.985 0.982 0.978 0.974 0.970 0.966 0.961 0.957 0.952 0.947 0.943 0.937 0.933 0.927 0.923 ANG. -1.3 -3.6 -5.5 -7.5 -9.6 -11.4 -13.3 -15.3 -17.1 -18.9 -21.0 -22.7 -24.5 -26.6 -28.3 -30.2 -32.2 -34.1 -35.9 -37.9
Rev.4.00 2005 page
BB302M
Package Dimensions
JEITA Package Code SC-61AA RENESAS Code PLSP0004ZA-A Package Name MPAK-4 MPAK-4V MASS[Typ.] 0.013g
Reference Symbol Dimension Millimeters
Section
Section
Pattern terminal position areas
0.35 0.55
1.35
0.25 0.42 0.62 0.13 0.11 0.95 0.85
0.15 1.65
0.35 0.15 0.25
0.75 0.55 0.65 0.05 0.05 0.55 0.75 1.05
1.95
Ordering Information
Part Name BB302MBW-TL-E Quantity 3000 Shipping Container Reel, Emboss Taping
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.4.00 2005 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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2005. Renesas Technology Corp., rights reserved. Printed Japan.
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Built Biasing Circuit Amplifier REJ03G0825-0400 (Previous ADE-208

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