Power High-Speed Switching REJ03G0580-0100 Rev.1.00 Mar.24.2005

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Power High-Speed Switching REJ03G0580-0100 Rev.1.00 Mar.24.2005

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RJK5003DPD
Power High-Speed Switching
REJ03G0580-0100 Rev.1.00 Mar.24.2005
VDSS rDS(ON) (MAX.) Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A (Package name MP-3A)
Gate Drain Source Drain
Applications
Inverter lighting equipment, SMPS, etc.
Maximum Ratings
25°C)
Parameter Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) Avalanche current Maximum power dissipation Channel temperature Storage temperature Symbol VDSS VGSS (pulse) Tstg Ratings 62.5 +150 +150 Unit Conditions
Rev.1.00,
Mar.24.2005,
page
RJK5003DPD
Electrical Characteristics
(Tch 25°C)
Parameter Drain-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS IDSS IGSS VGS(th) rDS(ON) VDS(ON) |yfs| Ciss Coss Crss td(on) td(off) Rth(ch-c) Min. Typ. Max. ±0.1 Unit °C/W Test conditions VGS= RGEN Channel case
Rev.1.00,
Mar.24.2005,
page
RJK5003DPD
Performance Curves
Drain Power Dissipation Derating Curve
Drain Power Dissipation
Maximum Safe Operating Area
Drain Current
1000
Case Temperature (°C)
Drain-Source Voltage Drain Current-Drain Source Voltage Characteristics (Typical)
Drain Current-Drain Source Voltage Characteristics (Typical)
25°C Pulse Test
Drain Current
62.5
Drain Current
25°C Pulse Test
Drain-Source Voltage
Drain-Source Voltage On-State Resistance Drain Current (Typical)
25°C Pulse Test
25°C Pulse Test
Drain-Source On-State Resistance rDS(ON)
Drain-Source On-State Voltage VDS(ON)
On-State Voltage Gate-Source Voltage (Typical)
10-1
Gate-Source Voltage
Drain Current
Rev.1.00,
Mar.24.2005,
page
RJK5003DPD
Forward Transfer Admittance Drain Current (Typical)
Forward Transfer Admittance
Pulse Test 25°C
Transfer Characteristics (Typical)
25°C Pulse Test
Drain Current
75°C 125°C
10-1
Gate-Source Voltage Capacitance Drain-Source Voltage (Typical)
Ciss
Drain Current
Switching Characteristics (Typical)
25°C RGEN
Switching Time (ns)
Capacitance (pF)
td(on)
td(off)
Coss 25°C 1MHz
Crss
Drain-Source Voltage
Drain Current Source-Drain Diode Forward Characteristics (Typical)
125°C Pulse Test 75°C 25°C
Gate-Source Voltage Gate Charge (Typical)
25°C
Gate-Source Voltage
Source Current
Gate Charge (nC)
Source-Drain Voltage
Rev.1.00,
Mar.24.2005,
page
RJK5003DPD
Breakdown Voltage Channel Temperature (Typical)
Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C)
Drain-Source On-State Resistance rDS(ON) (25°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
On-State Resistance Channel Temperature (Typical)
Pulse Test
10-1
Channel Temperature (°C)
Channel Temperature (°C)
Transient Thermal Impedance Zth(ch-c) (°C/W)
Gate-Source Threshold Voltage VGS(th)
Threshold Voltage Channel Temperature (Typical)
Transient Thermal Impedance Characteristics
0.05 0.02 0.01 Single pulse
10-1
10-3 5710-2 710-1 7101
Channel Temperature (°C)
Pulse Width
Switching Time Measurement Circuit
Switching Waveform
Monitor RGEN D.U.T.
Vout Monitor Vout
td(on)
td(off)
Rev.1.00,
Mar.24.2005,
page
RJK5003DPD
Package Dimensions
JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Package Name MP-3A MASS[Typ.] 0.32g
Unit:
10.4Max
1Max
2.5Min
0.76
0.76
Order Code
Lead form Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name direction Standard order code example RJK5003DPD-00L
Note: case standard. addition, please confirm packing specification every product about contents packing.
Rev.1.00,
Mar.24.2005,
page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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2005. Renesas Technology Corp., rights reserved. Printed Japan.
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Power High-Speed Switching REJ03G0580-0100 Rev.1.00 Mar.24.2005

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