REJ03G0539-0100 Rev.1.00 Feb.23.2005 on-resistance leakage curren

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REJ03G0539-0100 Rev.1.00 Feb.23.2005 on-resistance leakage curren

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H5N3008P
REJ03G0539-0100 Rev.1.00 Feb.23.2005
on-resistance leakage current High speed switching Built-in fast recovery diode
Outline
PRSS0004ZE-A (Package name: TO-3P)
Gate Drain (Flange) Source
Absolute Maximum Ratings
25°C)
Item Drain Source voltage Gate Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse)Note1 IAPNote3 Note2 Tstg Ratings +150 Unit
Rev.1.00 Feb.23.2005 page
H5N3008P
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Zero Gate voltage Drain current Gate Source leak current Gate Source cutoff voltage Forward transfer admittance Static Drain Source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate Source charge Gate Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.058 5150 ±0.1 0.069 Unit Test conditions Note4 VNote4 Note4 diF/dt A/µs
Rev.1.00 Feb.23.2005 page
H5N3008P
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P TO-3PV
MASS[Typ.] 5.0g
Unit:
15.6
14.9
19.9
18.0
5.45
5.45
Ordering Information
Part Name H5N3008P-E Quantity Plastic magazine Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.1.00 Feb.23.2005 page
Sales Strategic Planning Div.
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REJ03G0539-0100 Rev.1.00 Feb.23.2005 on-resistance leakage curren

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