REJ03G0529-0100 Rev.1.00 Feb.15.2005 on-resistance Capable gate d
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HAT1097R, HAT1097RJ
REJ03G0529-0100 Rev.1.00 Feb.15.2005
on-resistance Capable gate drive High density mounting Automotive application High temperature leakage guarantee Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-A (Previous code: SOP-8 <FP-8DA>)
Source Gate Drain
Absolute Maximum Ratings
25°C)
Item Symbol Ratings HAT1097R HAT1097RJ Unit
Drain source voltage VDSS Gate source voltage VGSS Drain current Note1 Drain peak current (pulse) Avalanche current IAPNote3 Avalanche energy EARNote3 2.14 Channel dissipation PchNote2 Channel temperature Storage temperature Tstg +150 +150 Notes: 10µs, duty cycle When using glass epoxy board (FR4 mm), Value 25°C,
Rev.1.00, Feb.15.2005, page
HAT1097R, HAT1097RJ
Electrical Characteristics
Item Drain source breakdown voltage Gate Source breakdown voltage Zero gate voltage drain current HAT1097R Zero gate voltage drain current HAT1055RJ Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IDSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) td(off) -1.0 1350 -0.85 -2.5 -1.10 Unit Test Conditions ±100 125°C -2.5 ANote4, -2.5 ANote4, -2.5 ANote4, -4.5 -2.5 0Note4 diF/dt A/µs
Rev.1.00, Feb.15.2005, page
HAT1097R, HAT1097RJ
Main Characteristics
Power Temperature Derating -100 Maximum Safe Operation Area
Drain Current
Test Condition: When using glass epoxy board (FR4
-0.3
Channel Dissipation
-0.1 Operation
this area -0.03 limited DS(on)
-0.01 -0.003 25°C shot Pulse -0.001 -0.1 -0.3 -100 Drain Source Voltage Note When using glass epoxy board (FR4 Typical Output Characteristics Typical Transfer Characteristics Pulse Test Pulse Test
(°C)
Ambient Temperature
-3.5
Drain Current
=-2.5 Drain Source voltage
Drain Current
-4.5
75°C 25°C -25°C
Gate Source Voltage
Drain Source Saturation Voltage VDS(on)
Pulse Test -0.8
Drain Source State Resistance RDS(on)
Drain Source Saturation Voltage Gate Source Voltage
Static Drain Source State Resistance Drain Current Pulse Test -4.5
-0.6
-0.4 -0.2
0.05
0.02 0.01
-100
Gate Source Voltage
Drain Current
Rev.1.00, Feb.15.2005, page
HAT1097R, HAT1097RJ
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.25 Pulse Test 0.20 0.15 -4.5 0.10
Forward Transfer Admittance Drain Current
-25°C 25°C 75°C
0.05
Pulse Test -100
(°C)
-0.1 -0.3
Case Temperature
Drain Current Typical Capacitance Drain Source Voltage 5000
Capacitance (pF)
Body-Drain Diode Reverse Recovery Time 1000
Reverse Recovery Time (ns)
25°C
2000 1000 Coss Crss Ciss
-0.1 -0.3
-100
Reverse Drain Current
Drain Source Voltage Switching Characteristics
Gate Source Voltage Switching Time (ns)
Dynamic Input Characteristics
1000 -0.1 -0.3 duty Drain Current -100 d(off) d(on)
Drain Source Voltage
-100
Gate Charge (nc)
Rev.1.00, Feb.15.2005, page
HAT1097R, HAT1097RJ
Reverse Drain Current Source Drain Voltage Maximum Avalanche Energy Channel Temperature Derating
Repetitive Avalanche Energy (mJ)
duty
Pulse Test
Reverse Drain Current
-0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage
Channel Temperature (°C) Avalanche Waveform
Avalanche Test Circuit
VDSS VDSS
Monitor
Monitor
(BR)DSS
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Switching Time Waveform
Vout td(on)
td(off)
Rev.1.00, Feb.15.2005, page
HAT1097R, HAT1097RJ
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
0.05
0.02
0.01
0.01
f(t) 125°C/W, 25°C When using glass epoxy board (FR4
0.001
0.0001
Pulse Width
1000
10000
Rev.1.00, Feb.15.2005, page
HAT1097R, HAT1097RJ
Package Dimensions
JEITA Package Code P-SOP8-3.95 4.9-1.27 RENESAS Code PRSP0008DD-A Previous Code FP-8DA MASS[Typ.] 0.085g
Index mark
Terminal cross section
NOTE) DIMENSIONS "*1(Nom)" "*2" INCLUDE MOLD FLASH. DIMENSION "*3" DOES INCLUDE TRIM OFFSET.
Reference Symbol
Dimension Millimeters 4.90 3.95
0.10
0.14
0.25 1.75
0.34
0.42 0.40
0.50
Detail
0.40 5.80 0.19
0.22 0.20
0.25
6.10 1.27 0.25 0.75 0.60 1.08 1.27 6.20
Ordering Information
Part Name HAT1097R-EL-E HAT1097RJ-EL-E Quantity 2500 pcs. 2500 pcs. Taping Taping Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.1.00, Feb.15.2005, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
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Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
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