1025-1150 25:1 VSWR CAPABILITY POUT WATTS MINIMUM GOLD METALLIZATION I
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MSC1400M
1025-1150 25:1 VSWR CAPABILITY POUT WATTS MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION
DESCRIPTION:
MSC1400M high power pulsed transistor specifically designed avionics applications. designed operation under short pulse width duty cycle pulse conditions capable withstanding minimum 25:1 load mismatch rated conditions. Internal impedance matching gold metallization ensure high product reliability consistency.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol
PDISS
Parameter
Power Dissipation Device Current Collector Base Voltage Junction Temperature Storage Temperature
Value
1000 +250 +150
Unit
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.12
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MSC1400M
STATIC
ELECTRICAL SPECIFICATIONS (Tcase
Symbol
BVCBO BVEBO BVCER ICES 15mA 50mA
Test Conditions
Value Min.
Typ.
Max.
Unit
DYNAMIC DYNAMIC
Symbol
POUT Conditions
Test Conditions
1025-1150 1025-1150 1025-1150 Pulse Width 10µS
Value Min.
Typ.
Max.
Unit
Duty Cycle
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MSC1400M
TEST CIRCUIT
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MSC1400M
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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