1025 1150 VOLTS INTERNAL INPUT/OUTPUT MATCHING POUT WATTS MINIMUM COMM
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MSC1175M
1025 1150 VOLTS INTERNAL INPUT/OUTPUT MATCHING POUT WATTS MINIMUM COMMON BASE CONFIGURATION
DESCRIPTION:
MSC1175M bipolar transistor specifically designed high peak pulse power applications such DME/TACAN. This device capable withstanding minimum 20:1 load VSWR phase angle under full rated conditions. Internal impedance matching provides consistent broadband performance.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol
PDISS
Parameter
Power Dissipation Device Current Collector-Supply Voltage* Junction Temperature Storage Temperature
Value
+200
Unit
Thermal Data
RTH(J-C) Thermal Resistance Junction-case
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MSC1175M
STATIC
ELECTRICAL SPECIFICATIONS (Tcase
Symbol
BVCBO BVEBO BVCER ICES
Test Conditions
Value Min.
Typ.
Max.
-12.5
Unit
DYNAMIC
Symbol
POUT Conditions
Test Conditions
1025 1150 1025 1150 1025 1150 Pulse Width 10µS Duty Cycle
Value Min.
Typ.
Max.
Unit
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MSC1175M
IMPEDANCE DATA
FREQ 1025 1090 1150 Normalized j5.1 j4.5 j3.3 j4.2 j3.5 j2.5
TEST CIRCUIT
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MSC1175M
PACKAGE MECHANICAL DATA PACKAGE
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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