DESIGNED HIGH POWER PULSED APPLICATIONS (typ.) 1030 1090 (min.) 1025 1
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MS2472
DESIGNED HIGH POWER PULSED APPLICATIONS (typ.) 1030 1090 (min.) 1025 1150 1025 1150 POUT WATTS MINIMUM GOLD METALLIZATION INTERNAL INPUT/OUTPUT MATCHED COMMON BASE CONFIGURATION
DESCRIPTION:
MS2472 hermetically sealed, gold metallized, silicon power transistor. MS2472 designed applications requiring high peak power duty cycles such DME. MS2472 internal input/output matched resulting improved broadband performance thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol VCBO VCES VEBO PDISS Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 1350 +150 Unit
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.06
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MS2472
ELECTRICAL SPECIFICATIONS (Tcase SPECIFICATIONS
STATIC
Symbol
BVCBO BVCES BVEBO ICES
Test Conditions
0.25
Value Min.
Typ.
Max.
Unit
DYNAMIC
Symbol
POUT Conditions:
Test Conditions
1025 1150MHz 1025 1150MHz 150W 150W
Value Min.
Typ.
Max.
Unit
Pulse Width Duty Cycle
IMPEDANCE DATA
FREQ 1025 1090 1150 150W ZIN() 2.50 j2.7 2.60 j1.6 1.90+ j0.7 ZCL() 1.33 j1.7 1.33 j1.9 1.33 j2.1
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS2472
TEST CIRCUIT
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS2472
PACKAGE MECHANICAL DATA MECHANICAL
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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