MICROWAVE TRANSISTORS PULSED APPLICATIONS Features Watts µSec Pul
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MS2200
MICROWAVE TRANSISTORS PULSED APPLICATIONS Features
Watts µSec Pulse Width, Duty Cycle Refractory Gold Metallization Emitter Ballasting Resistance Reliability Ruggedness Infinite VSWR Capability Specified Operating Conditions Input Matched, Common Base Configuration Balanced Configuration
DESCRIPTION:
MS2200 hermetically sealed, gold metallized silicon pulse power transistor mounted common base balanced configuration. MS2200 designed applications requiring high peak power duty cycles within frequency range MHz.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol Parameter Value Unit
VCBO VCES VEBO PDISS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
43.2 1167 +200 +150
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 0.15
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS2200
ELECTRICAL SPECIFICATIONS (Tcase STATIC
Symbol Test Conditions Min. Value Typ. Max. Units
BVCBO BVCES BVEBO
ICES
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Units
POUT
Note:
Pulse Width 250µSec, Duty Cycle This device suitable under other pulse width/duty cycle conditions. Please contact factory specific applications assistance.
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS2200
TYPICAL PERFORMANCE
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MS2200
TYPICAL PERFORMANCE (CONTINUED) (CONTINUED)
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MS2200
TEST CIRCUIT
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MS2200
PACKAGE MECHANICAL DATA
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Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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