VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70
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SKiM Absolute Maximum Ratings
VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70 25/70 IGBT, max. case operating temperature min. IEC-EN 60721-3-3 25/70 25/70 sin.; 1200 1200 1390 +150 (125) 2500 40/125/56 3300
SKiM® IGBT Modules SKiM
Preliminary Data
Inverse Diode
Characteristics
V(BR)CES VGE(th) ICES IGES VCEsat VCE, VCES (125)
min.
typ.
1,6(1,85) 0,9(1,1) 2,4(2,3) 1,67
max.
Units
°C/W °C/W °C/W °C/W
VCES
Features Trench gate IGBT with field stop layer inductance case Fast soft inverse diodes Isolated (Direct Copper Bonded) ceramic plate Pressure contact technology thermal contacts Spring contact system attach driver control terminals Integrated temperature sensor Typical Applications Switched mode power supplies Three phase inverters motor speed control Switching (not linear use)
Cies Coes Cres resistance, terminal-chip; (125) td(on) td(off) Eoff ind. load RGon RGoff
Inverse Diode IRRM Rthjh RthjhD R'thjc R'thjcD (125)
(125) °C2) (125) °C2) IGBT diode IGBT diode
0,09 0,125 0,014 0,025
Thermal Characteristics
Temperature Sensor tolerance
unless otherwise specified GEoff Measured chip level mounting instructions Corresponding value. This value cannot measured. only given comparison. Controlled Axial Lifetime Technology
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Dimensions Case outline circuit diagram
Mechanical Data
Symbol Conditions min.
heatsink, Units heatsink, Units terminals, Units terminals, Units (M5) (M6)
Values typ.
Units max.
5x9,81 lb.in. lb.in. m/s2
This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
This technical information specifies semiconductor devices promises characteristics. warranty guarantee expressed implied made regarding delivery, performance suitability.
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