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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70


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SKiM Absolute Maximum Ratings
VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70 25/70 IGBT, max. case operating temperature min. IEC-EN 60721-3-3 25/70 25/70 sin.; 1200 1200 1390 +150 (125) 2500 40/125/56 3300
SKiM® IGBT Modules SKiM
Preliminary Data
Inverse Diode
Characteristics
V(BR)CES VGE(th) ICES IGES VCEsat VCE, VCES (125)
VCES
min.
typ.
max.
Units
°C/W °C/W °C/W °C/W
Features channel, homogeneous planar IGBT Silicon structure with buffer layer (soft punch through) technology inductance case Fast soft inverse diodes Isolated (Direct Copper Bonded) ceramic plate Pressure contact technology thermal contacts Spring contact system attach driver control terminals Integrated temperature sensor Typical Applications Switched mode power supplies Three phase inverters motor speed control Switching (not linear use)
2,0(2,1) 1,15(1,35) 1050 2,3(2,1) 1,8(1,6) 1,67
Cies Coes Cres resistance, terminal-chip; (125) td(on) td(off) Eoff IRRM Rthjh RthjhD R'thjc R'thjcD ind. load RGon RGoff
Inverse Diode (125) (125) °C2) (125) °C2) IGBT diode IGBT diode
0,09 0,125 0,014 0,025
Thermal Characteristics
Temperature Sensor tolerance
unless otherwise specified VGEoff Measured chip level mounting instructions Corresponding value. This value cannot measured. only given comparison. Controlled Axial Lifetime Technology
SEMIKRON
020315
SKiM
SKiM 500GD128DM.xls
Eoff
SKiM 500GD128DM.xls
Eoff
Turn-on /-off energy (IC)
Fig. Turn-on /-off energy (RG)
1000
SKiM 500GD128DM.xls
tp=16µs 100µs
pulse
SKiM 500GD128DM.xls
RGoff 1000
10ms
1000 10000
ICpuls/IC 1000 1200 1400
Fig. Maximum safe operating area (SOA) (VCE)
SKiM 500GD128DM.xls
Fig. Turn-off safe operating area (RBSOA)
SKiM 500GD128DM.xls
allowed numbers short circuits: <1000 time between short circuits: ICSC/IC
1000 1200 1400
Fig. Safe operating area short circuit (VCE)
Fig. Rated current temperature (THS)
020315 SEMIKRON
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SKiM 500GD128DM.xls
SKiM 500GD128DM.xls
Typ. output characteristic,
Fig. Typ. output characteristic,
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Fig. 6DWXUDWLRQ .KDUD.WHULVWL. ,*%7 &DO.XODWLRQ HOHPHQWV HTXDWLRQV
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Fig. WUDQVIHU .KDUD.WHULVWL.
ICpuls
SKiM 500GD128DM.xls
Cies
Coes
Cres
VCE10
Fig. Typ. gate charge characteristic
SEMIKRON
Fig. Typ. capacitances
020315
SKiM
10000
SKiM 500GD128DM.xls
1000
tdoff
RGon RGoff ind. load
10000
SKiM 500GD128DM.xls
tdoff
1000 tdon
ind. load
tdon
Fig. Typ. switch times
SKiM 500GD128DM.xls
Fig. Typ. switch times gate resistor
Tj=125°C, typ. Tj=25°C, typ.
Fig. Typ. diode forward characteristic
0,01
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SKiM 500GD128DM.xls
0,01 0,001 D=0,50 0,20 0,10 0,05 0,02 0,01
0,001 single pulse 0,0001 ZthJHS 0,00001 1E-05 0,0001
0,0001 ZthJHS
single pulse
D=0,5 0,05 0,02 0,01
0,00001 1E-05 0,0001
0,001
0,01
0,001
0,01
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7UDQVLHQW WKHUPDO LPSHGDQ.H LQYHUVH GLRGHV =WK-+6
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Dimensions Case outline circuit diagram
Mechanical Data
Symbol Conditions min.
heatsink, Units heatsink, Units terminals, Units terminals, Units (M5) (M6)
Values typ.
Units max.
5x9,81 lb.in. lb.in. m/s2
This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
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020315

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