IGBT VCES (70) (70) VGES (Tstg TOPERATION Tstg Visol min. Inverse Diod
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SKiM Absolute Maximum Ratings
IGBT VCES (70) (70) VGES (Tstg TOPERATION Tstg Visol min. Inverse Diode (70) =-ICM (70) sin.; unless otherwise specified
(400) 1050 (800) +150 (125) 2500 (370) (740) 54450
Units
SKiM IGBT Module SKiM
Preliminary Data
Characteristics
IGBT VGE(TO) VCE(TO) VCE(sat)
unless otherwise specified
min.
typ.
(24) (0,8) (2,9) (1,7) 3,75 2,25
max. Units SKiM
VCES (125) (125) (125) chip level
I:\M arke
Cies Coes Cres resistance, terminal-chip (125) d(on) d(off) RGon RGoff Eoff Inverse Diode (125) chip level (125) (125) RGon RGoff Thermal Characteristics Rthjh IGBT Rthjh Temperature Sensor tolerance Mechanical Data heatsink (M5) terminals (M6)
(1,1) 1,25 (1,2) (0,85) (1,33) (0,9) (2,0)
Features NPT-IGBT with positive temperature coefficient VCEsat Short circuit, self limiting Corresponds standards 60721-3-3 (humidity) class 3K7/IE32 68T.1 (climate) 40/125/56 Typical Applications Resonant inverters 100kHz Inductive heating Electronic welders 20kHz
0,09 0,125 1,67
SEMIKRON
020903
SKiM
iM500GD063DM-1
iM500GD063DM-2
25°C 125°C
[°C]
Fig. Typ. output characteristic, inclusive
Fig. Rated current temperature (TS)
iM500GD063DM-4
iM500GD063DM-3
[mJ]
[mJ] 125°C 600V 300A
125°C 600V
Fig. Typ. turn-on /-off energy
Fig. Typ. turn-on /-off energy
iM500GD063DM-5
iM500GD063DM-6
1000
80µs
ICPuls 300A 300V
25°C
125°C
1000 2000 3000 4000 [nC]
Fig. Typ. transfer characteristic
Fig. Typ. gate charge characteristic
020903 SEMIKRON
SKiM
10000 [ns] 125°C 300V
iM500GD063DM-7
10000 125°C 300V 300A
iM500GD063DM-8
[ns]
tdoff
1000
tdoff
1000 tdon
tdon
Fig. Typ. switching times
iM500GD063DM-9
Fig. Typ. switching times gate
iM500GD063DM-10
Zth(j-s) [K/W]
Zth(j-s)D [K/W]
0,01 D=0,5 0,05 0,02 0,01 single pulse single pulse 0,00001 0,00001 0,001 0,0001 1E-05 1E-04 0,001 0,01 0,01 D=0,5 0,05 0,02 0,01
0,001
0,001
0,0001
Fig. Transient thermal impedance IGBT Zthp(j-s) (tp);
iM500GD063DM-11
Fig. Transient thermal impedance Zthp(j-s)D
iM500GD063DM-12
I:\M arke
300V Irrm 125°C 300A
125°C, typ. 25°C, typ. 80µs
2000
4000 6000 F/dt [A/µs]
Fig. diode forward
SEMIKRON 020903
characteristic, inclusive
SKiM
iM500GD063DM-13
300V =125°C
This electrostatic discharge sensitive device (ESDS).
600A 450A 300A 200A 100A
Please observe international standard 747-1, Chapter
2000 4000 6000 [A/µs]
Fig. Typ. diode recovered charge SKiM SKiM
Dimensions
Case outline circuit diagrams
This technical information specifies semiconductor devices promises characteristics. warranty guarantee expressed implied made regarding delivery, performance suitability. 020903 SEMIKRON
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