VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70 25/70 IGBT, max. case operating temperature min. IEC-EN 60721-3-3 25/70 25/70 sin.; 1200 1200 +150 (125) 2500 Class
SKiM® IGBT Modules SKiM
Preliminary Data
Inverse Diode 1100
Characteristics
V(BR)CES VGE(th) ICES IGES VCEsat VCE, VCES
VCES
min.
typ.
max. Units
°C/W °C/W °C/W °C/W
Features channel, homogeneous inductance case baseplate Allows extreme compact converter design Fast soft inverse diodes (Direct Copper Bonded) Technology Solderable gold plated terminals Large clearance (9,8 creepage distances Typical Applications Switched mode power supplies Three phase inverters motor speed control Switching (not linear use)
2,35 1,25 2,0(1,8) 1,8(1,6)
2,85 0,28 0,56 0,110 0,218
Cies Coes Cres resistance, terminal-chip; td(on) td(off) Eoff IRRM Rthjh RthjhD R'thjc R'thjcD ind. load RGon RGoff
Inverse Diode (125) IGBT diode IGBT diode
Thermal Characteristics
Mechanical Data
Symbol Conditions min.
heatsink, Units heatsink, Units (M5)
Values typ.
Units max.
5x9,81 lb.in. m/s2
unless otherwise specified VGEoff Measured chip level mounting instructions Corresponding value. This value cannot measured. only given comparison. Controlled Axial Lifetime Technology
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SKiM125GD127D.xls
SKiM125GD127D.xls
Eoff Eoff
Fig. Turn-on /-off energy (IC)
Fig. Turn-on /-off energy (RG)
1000
SKiM125GD127D.xls
tp=12µs 100µs
pulse
SKiM125GD127D.xls
RGoff 1000
10ms
1000 10000 ICpuls/IC 1000 1200 1400
Fig. Maximum safe operating area (SOA) (VCE)
SKiM125GD127D.xls
Fig. Turn-off safe operating area (RBSOA)
SKiM125GD127D.xls
allowed numbers short circuits: <1000 time between short circuits:
ICSC/IC
1000 1200 1400
Fig. Safe operating area short circuit (VCE)
Fig. Rated current temperature (THS)
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SKiM125GD127D.xls
SKiM125GD127D.xls
Fig. Typ. output characteristic,
Fig. Typ. output characteristic,
SKiM125GD127D.xls
Fig. Saturation characteristic (IGBT) Calculation elements equations
Gate 1000 800V
SKiM125GD127D.xls
Fig. Typ. transfer characteristic,
ICpuls
SKiM125GD127D.xls
Cies
Coes Cres
VCE10
Fig. Typ. gate charge characteristic
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Fig. Typ. capacitances
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1000
SKiM125GD127D.xls
tdoff
RGon =RGoff ind. load
10000
SKiM125GD127D.xls
tdoff 1000
ind. load
tdon
tdon
Fig. Typ. switch times
Fig. Typ. switch times gate resistor
Tj=125°C, typ. Tj=25°C, typ.
SKiM125GD127D.xls
Fig. Typ. diode forward characteristic
SKiM125GD127D.xls
Fig. Diode turn-off energy dissipation pulse
SKiM125GD127D.xls
D=0,5 0,05 0,02 0,01 single pulse
0,01
0,001 single pulse ZthJHS 0,0001 0,00001 0,0001
D=0,50 0,20 0,10 0,05 0,02 0,01
0,01
0,001 ZthJHS
0,001
0,01
0,0001 0,00001 0,0001
0,001
0,01
Fig. Transient thermal impedance IGBT ZthJHS (tp);
Fig. Transient thermal impedance inverse diodes ZthJHS (tp);
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Dimensions Case outline circuit diagram This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
This technical information specifies semiconductor devices promises characteristics. warranty guarantee expressed implied made regarding delivery, performance suitability.
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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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