VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70
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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70 25/70 IGBT, max. case operating temperature min. IEC-EN 60721-3-3 25/70 25/70 sin.; +150 (125) 2500 Class
SKiM® IGBT Modules SKiM
Preliminary Data
Inverse Diode 200/
Characteristics
V(BR)CES VGE(th) ICES IGES VCEsat VCE, VCES
VCES
min.
typ.
1,25 1,5(1,45) 1,55(1,55)
max. Units
°C/W °C/W °C/W °C/W
Features channel, homogeneous inductance case baseplate Allows extreme compact converter design Fast soft inverse diodes (Direct Copper Bonded) Technology Solderable gold plated terminals Large clearance (9,8 creepage distances Typical Applications Switched mode power supplies Three phase inverters motor speed control Switching (not linear use)
Cies Coes Cres resistance, terminal-chip; td(on) td(off) Eoff IRRM Rthjh RthjhD R'thjc R'thjcD ind. load RGon RGoff
0,75 0,177 0,380
Inverse Diode (125) IGBT diode IGBT diode
Thermal Characteristics
Mechanical Data
Symbol Conditions min.
heatsink, Units heatsink, Units (M5)
Values typ.
Units max.
5x9,81 lb.in. m/s2
unless otherwise specified -IC, -diF/dt 1000 A/µs, VGEoff Measured chip level mounting instructions Corresponding value. This value cannot measured. only given comparison. Controlled Axial Lifetime Technology
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Eoff
SKiM100GD063D.XLS-1
SKiM100GD063D.XLS-2
Eoff
Fig. Turn-on /-off energy (IC)
Fig. Turn-on /-off energy (RG)
SKiM100GD063D.XLS-3
SKiM100GD063D.XLS-4
1000 100µs tp=16µs
pulse
RGoff
10ms 1000 10000 ICpuls/IC
Fig. Maximum safe operating area (SOA) (VCE)
SKiM100GD063D.XLS-5
Fig. Turn-off safe operating area (RBSOA)
SKiM100GD063D.XLS-6
allowed numbers short circuits: <1000 time between short circuits:
ICSC/IC
Fig. Safe operating area short circuit (VCE)
Fig. Rated current temperature (THS)
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SKiM100GD063D.XLS-7
SKiM100GD063D.XLS-8
Fig. Typ. output characteristic,
Fig. Typ. output characteristic,
SKiM100GD063D.XLS-10
Fig. Saturation characteristic (IGBT) Calculation elements equations
SKiM100GD063D.XLS-11
Fig. Typ. transfer characteristic,
QGate 100V 300V
SKiM100GD063D.XLS-12
ICpuls
Cies
Coes
Cres
Fig. Typ. gate charge characteristic
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Fig. Typ. capacitances
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SKiM100GD063D.XLS-13
1000 tdoff
RGon RGoff ind. load
1000
SKiM100GD063D.XLS-14
tdoff
ind. load
tdon
tdon
Fig. Typ. switch times
Fig. Typ. switch times gate resistor
Tj=125°C, typ. Tj=25°C, typ.
SKiM100GD063D.XLS-15
SKiM100GD063D.XLS-16
EoffD
Fig. Typ. diode forward characteristic
SKiM100GD063D.XLS-17
Fig. Diode turn-off energy dissipation pulse
SKiM100GD063D.XLS-18
0,01
single pulse 0,001 ZthJHS 0,0001 0,00001 0,0001
D=0,50 0,20 0,10 0,05 0,02 0,01
0,01
0,001 ZthJHS 0,0001 0,00001
single pulse
D=0,50 0,20 0,10 0,05 0,02 0,01
0,001
0,01
0,0001
0,001
0,01
Fig. Transient thermal impedance IGBT ZthJHS (tp);
Fig. Transient thermal impedance inverse diodes ZthJHS (tp);
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SKiM100GD063D.XLS-19
SKiM100GD063D.XLS-20
diF/dt
1000
2000
3000
4000 5000 A/µs
Fig. Typ. diode peak reverse recovery current (IF;
1000 diF/dt 2000 3000 4000 5000 6000 A/µs
SKiM100GD063D.XLS-21
Fig. Typ. diode peak reverse recovery current (di/dt)
IF=100
Fig. Typ. diode recovered charge
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Dimensions Case outline circuit diagram This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
This technical information specifies semiconductor devices promises characteristics. warranty guarantee expressed implied made regarding delivery, performance suitability.
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