75A, 55V, 0.007 Ohm, N-Channel UltraFETPower MOSFETs HUF75345 N-C
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HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S
75A, 55V, 0.007 Ohm, N-Channel UltraFETPower MOSFETs
HUF75345 N-Channel power MOSFET manufactured using innovative UltraFETprocess. This advanced process technology achieves lowest possible on-resistance silicon area, resulting outstanding performance. This device capable withstanding high energy avalanche mode diode exhibits very reverse recovery time stored charge. designed applications where power efficiency important, such switching regulators, switching converters, motor drivers, relay drivers, low-voltage switches, power management portable battery-operated products. Formerly developmental type TA75345.
BRAND 75345G 75345P 75345S 75345S
August 1997
Features
75A, Ultra On-Resistance, rDS(ON) 0.007 Diode Exhibits Both High Speed Soft Recovery Temperature Compensating PSPICE Model Thermal Impedance PSPICE Model Peak Current Pulse Width Curve Rating Curve
Ordering Information
PART NUMBER HUF75345G3 HUF75345P3 HUF75345S3 HUF75345S3S PACKAGE TO-247 TO-220AB TO-262AA TO-263AB
Symbol
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, e.g., HUF75345S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
JEDEC TO-263AB
DRAIN (FLANGE)
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. UltraFETis Trademark Harris Corporation Copyright Harris Corporation 1997
File Number
4365.1
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S
Absolute Maximum Ratings
25oC, Unless Otherwise Specified Figure Figures 1.43 W/oC
Drain Source Voltage VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous (Figure Pulsed Drain Current .IDM Pulsed Avalanche Rating Power Dissipation (Figure Derate Above 25oC (Figure Operating Storage Temperature TSTG Soldering Temperature Leads
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA (Figure 50V, 45V, 150oC 30V, 75A, Ig(REF) 1.0mA (Figures 13,16,17) 0.006 0.007 UNITS
Drain Source Breakdown Voltage Gate Source Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS
±20V 75A, (Figure 30V, 75A, 0.4, 10V, (Figures
Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
25V, 1MHz (Figure
4000 1450
oC/W oC/W oC/W
(Figure TO-247 TO-220, TO-262 TO-263
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL TEST CONDITIONS 75A, dISD/dt 100A/µs 75A, dISD/dt 100A/µs 1.25 UNITS
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
THERMAL IMPEDANCE DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01
ZJC, NORMALIZED
NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-1 10-2 RECTANGULAR PULSE DURATION
SINGLE PULSE 0.01 10-5 10-4
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000 RATED 25oC DRAIN CURRENT IDM, PEAK CURRENT
2000 25oC 1000 TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS: TRANSCONDUCTANCE LIMIT CURRENT THIS REGION
100µs
10ms
OPERATION THIS AREA LIMITED rDS(ON)
VDSS 10-5 10-4 10-3 10-2 10-1 PULSE WIDTH
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S Typical Performance Curves
ID(ON), ON-STATE DRAIN CURRENT
(Continued)
PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5%
DRAIN CURRENT
25oC 175oC VGS, GATE SOURCE VOLTAGE -55oC
PULSE DURATION 250µs 25oC VDS, DRAIN SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 250µs, 10V, NORMALIZED GATE THRESHOLD VOLTAGE
VDS, 250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 250µA
7000 1MHz 6000 CAPACITANCE (pF)
5000 CISS 4000 3000 2000 COSS 1000 CRSS
JUNCTION TEMPERATURE (oC)
DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S Typical Performance Curves
1000 IAS, AVALANCHE CURRENT
(Continued)
GATE SOURCE VOLTAGE
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
STARTING 25oC
WAVEFORMS DESCENDING ORDER: GATE CHARGE (nC)
STARTING 150oC
0.01
tAV, TIME AVALANCHE (ms)
NOTE:
Refer Harris Application Notes AN9321 AN9322.
NOTE:
Refer Harris Application Notes AN7254 AN7260.
FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE GATE CHARGE WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S Test Circuits Waveforms
(Continued)
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S PSPICE Electrical Model
SUBCKT HUF75345
5.55e-9 5.55e-9 3.45e-9
5/30/97
LDRAIN DPLCAP RLDRAIN DBREAK EBREAK DRAIN RSLC1 ESLC
RSLC2
EBREAK 56.7 EVTHRES EVTEMP
GATE
LGATE EVTEMP RGATE EVTHRES
LDRAIN 1e-9 LGATE 2.6e-9 LSOURCE 1.1e-9 KGATE LSOURCE LGATE 0.0085 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD
RLGATE
MSTRO LSOURCE RSOURCE RLSOURCE SOURCE
RBREAK RBREAKMOD RDRAIN RDRAINMOD 1e-4 RGATE 0.36 RLDRAIN RLGATE RLSOURCE RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 3.15e-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
VBAT ESLC .MODEL DBODYMOD 6e-12 1.4e-3 IKF=20 XTI=5 TRS1 2.75e-3 TRS2 5e-6 5.5e-9 40e-8 0.5) .MODEL DBREAKMOD 0.028 IKF=30 TRS1 -4e-3 TRS2 1e-6) .MODEL DPLCAPMOD (CJO 6.75e-9 1e-30 0.88 VJ=1.45 FC=0.5) .MODEL MMEDMOD NMOS (VTO 2.93 13.75 1e-30 0.36) .MODEL MSTROMOD NMOS (VTO 3.23 1e-30 .MODEL MWEAKMOD NMOS (VTO 2.35 0.02 1e-30 3.6) .MODEL RBREAKMOD (TC1 8e-4 4e-6) .MODEL RDRAINMOD (TC1 1.5e-1 6.5e-4) .MODEL RSLCMOD (TC1 1e-4 1.05e-6) .MODEL RSOURCEMOD (TC1 1e-3 .MODEL RVTHRESMOD -1.5e-3 -2.6e-5) .MODEL RVTEMPMOD (TC1 -2.75e-3 1.45e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF -9.00 VOFF= -4.00) -4.00 VOFF= -9.00) 0.00 VOFF= 0.50) 0.50 VOFF= 0.00)
NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD
RDRAIN
DBODY
MWEAK MMED
RBREAK RVTEMP
VBAT
RVTHRES
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S PSPICE Thermal Model
June HUF75345 CTHERM1 5.00e-5 CTHERM2 2.00e-3 CTHERM3 8.50e-3 CTHERM4 3.20e-2 CTHERM5 8.50e-2 CTHERM6 5.50e-1 RTHERM1 1.55e-3 RTHERM2 3.30e-3 RTHERM3 1.50e-2 RTHERM4 4.35e-2 RTHERM5 1.50e-1 RTHERM6 1.65e-1
JUNCTION
RTHERM1
CTHERM1
RTHERM2
CTHERM2
RTHERM3
CTHERM3
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
CASE
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S TO-247
LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
TERM.
INCHES SYMBOL 0.180 0.046 0.060 0.095 0.020 0.800 0.605 0.190 0.051 0.070 0.105 0.026 0.820 0.625
MILLIMETERS 4.58 1.17 1.53 2.42 0.51 20.32 15.37 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES
0.219 0.438 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270
5.56 11.12 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85
BACK VIEW
NOTES: Lead dimension finish uncontrolled Lead dimension (without solder). typically 0.002 inches (0.05mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 1-93.
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S TO-220AB (Alternate Version)
LEAD JEDEC TO-220AB PLASTIC PACKAGE
TERM.
INCHES SYMBOL 0.170 0.048 0.030 0.045 0.018 0.590 0.395 0.180 0.052 0.034 0.055 0.022 0.610 0.405
MILLIMETERS 4.32 1.22 0.77 1.15 0.46 14.99 10.04 4.57 1.32 0.86 1.39 0.55 15.49 10.28 NOTES
0.100 0.200 0.235 0.095 0.530 0.110 0.149 0.105 0.255 0.105 0.550 0.130 0.153 0.115
2.54 5.08 5.97 2.42 13.47 2.80 3.79 2.66 6.47 2.66 13.97 3.30 3.88 2.92
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-220AB outline dated 3-24-87. Dimension (without solder). Solder finish uncontrolled this area. typically 0.002 inches (0.05mm) solder plating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 7-97.
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S TO-262AA
LEAD JEDEC TO-262AA PLASTIC PACKAGE
TERM.
INCHES MILLIMETERS SYMBOL NOTES 0.170 0.180 4.32 4.57 0.048 0.052 1.22 1.32 0.030 0.034 0.77 0.86 0.045 0.055 1.15 1.39 0.018 0.022 0.46 0.55 0.405 0.425 10.29 10.79 0.395 0.405 10.04 10.28 0.100 2.54 0.200 5.08 0.045 0.055 1.15 1.39 0.095 0.105 2.42 2.66 0.530 0.550 13.47 13.97 0.110 0.130 2.80 3.30 NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-262AA outline dated 6-90. Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 7-97.
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TERM.
TERM.
.450 (11.43)
.700 (17.78)
.350 (8.89)
.080(2.03) .062(1.58)
.150 (3.81) .080(2.03)
.062(1.58) MINIMUM SIZE RECOMMENDED SURFACE-MOUNTED APPLICATIONS
INCHES MILLIMETERS SYMBOL NOTES 0.170 0.180 4.32 4.57 0.048 0.052 1.22 1.32 0.030 0.034 0.77 0.86 0.045 0.055 1.15 1.39 0.310 7.88 0.018 0.022 0.46 0.55 0.405 0.425 10.29 10.79 0.395 0.405 10.04 10.28 0.100 2.54 0.200 5.08 0.045 0.055 1.15 1.39 0.095 0.105 2.42 2.66 0.175 0.195 4.45 4.95 0.090 0.110 2.29 2.79 0.050 0.070 1.27 1.77 0.315 8.01 NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-263AB outline dated 2-92. dimensions established minimum mounting surface terminal Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. terminal length soldering. Position lead measured 0.120 inches (3.05mm) from bottom dimension Controlling dimension: Inch. Revision dated 7-97.
HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S TO-263AB
24mm TAPE REEL
40mm MIN. ACCESS HOLE 1.5mm DIA. HOLE 30.4mm
4.0mm 2.0mm 1.75mm
13mm 330mm 100mm
24mm
16mm 24.4mm
USER DIRECTION FEED
COVER TAPE GENERAL INFORMATION "9A" SUFFIX PART NUMBER. SUFFIX PART "HUF" SERIES. PIECES REEL. ORDER MULTIPLES FULL REELS ONLY. MEETS EIA-481 REVISION SPECIFICATIONS.
Revision dated 7-97
Harris Semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
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