The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.    


Datasheet Search Engine   
 
Part # or Description: • 5V RS232 Driver • 2SC5066* • "Real Time Clock" • "USB connector" • "blue led" 5mm • 10 watt zener diode • 2N3055* motorola
 
Search Tip: Try entering the part number only. Include a wildcard (eg. lm317* or 1n4148*)

 

 

Buck Pulse-Width Modulator (PWM) Controller Output Voltage Monitor


Datasheet Thumbnail

  

Download PDF



Top Searches for this datasheet



HIP6008
Buck Pulse-Width Modulator (PWM) Controller Output Voltage Monitor
HIP6008 provides complete control protection DC-DC converter optimized high-performance microprocessor applications. designed drive N-Channel MOSFET standard buck topology. HIP6008 integrates control, output adjustment, monitoring protection functions into single package. output voltage converter easily adjusted precisely regulated. HIP6008 includes 4-Input Digitalto-Analog Converter (DAC) that adjusts output voltage from 2.0VDC 3.5VDC 0.1V increments. precision reference voltage-mode regulator hold selected output voltage within ±1.5% over temperature line voltage variations. HIP6008 provides simple, single feedback loop, voltagemode control with fast transient response. includes 200kHz free-running triangle-wave oscillator that adjustable from below 50kHz over 1MHz. error amplifier features 15MHz gain-bandwidth product 6V/µs slew rate which enables high converter bandwidth fast transient performance. resulting duty ratio ranges from 100%. HIP6008 monitors output voltage with window comparator that tracks output issues Power Good signal when output within ±10%. HIP6008 protects against over-current conditions inhibiting operation. Built-in over-voltage protection triggers external crowbar input supply. HIP6008 monitors current using rDS(ON) upper MOSFET which eliminates need current sensing resistor.
January 1997
Features
Drives N-Channel MOSFET Operates From +12V Input Simple Single-Loop Control Design Voltage-Mode Control Fast Transient Response High-Bandwidth Error Amplifier Full 100% Duty Ratio Excellent Output Voltage Regulation ±1.5% Over Line Voltage Temperature Digital-to-Analog Output Voltage Selection Wide Range 2.0VDC 3.5VDC 0.1V Binary Steps Power-Good Output Voltage Monitor Over-Voltage Over-Current Fault Monitors Does Require Extra Current Sensing Element Uses MOSFET's rDS(ON) Small Converter Size Constant Frequency Operation 200kHz Free-Running Oscillator Programmable from 50kHz over 1MHz
Applications
Power Supply PentiumTM, PentiumPro, PowerPCand AlphaMicroprocessors High-Power 3.xV DC-DC Regulators Low-Voltage Distributed Power Supplies
Pinout
HIP6008 (SOIC) VIEW PKG. M16.15
Ordering Information
PART NUMBER HIP6008CB TEMP. RANGE (oC) PACKAGE SOIC
OCSET VID0 VID1 VID2 VID3 COMP
VSEN RT/OVP BOOT UGATE PHASE PGOOD
Alphais trademark Digital Equipment Corporation. Pentiumis trademark Intel Corporation. PowerPCis trademark IBM.
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1997
File Number
4281
HIP6008 Typical Application
+12V PGOOD RT/OVP MONITOR PROTECTION OCSET BOOT +12V
VID0 VID1 VID2 VID3
UGATE PHASE +VOUT
HIP6008
COMP
VSEN
Block Diagram
VSEN 110% 115% OVERVOLTAGE OVERCURRENT REFERENCE 200µA SOFTSTART BOOT UGATE PHASE VID0 VID1 VID2 VID3 COMP OSCILLATOR RT/OVP CONVERTER (DAC) DACOUT ERROR COMPARATOR GATE INHIBIT CONTROL LOGIC 10µA POWER-ON RESET (POR)
PGOOD
OCSET
HIP6008
Absolute Maximum Ratings
Supply Voltage, VCC. +15.0V Boot Voltage, VBOOT VPHASE +15.0V Input, Output Voltage .GND -0.3V 0.3V Classification Class
Thermal Information
Thermal Resistance (Typical, Note (oC/W) SOIC Package SOIC Package (with Copper) Maximum Junction Temperature (Plastic Package) 150oC Maximum Storage Temperature Range .-65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
Recommended Operating Conditions
Supply Voltage, VCC. +12V ±10% Ambient Temperature Range .0oC 70oC Junction Temperature Range .0oC 100oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: measured with component mounted evaluation board free air.
Electrical Specifications
PARAMETER SUPPLY CURRENT Nominal Supply POWER-ON RESET Rising Threshold Falling Threshold Rising VOCSET Threshold OSCILLATOR Free Running Frequency Total Variation Ramp Amplitude REFERENCE DACOUT Voltage Accuracy ERROR AMPLIFIER Gain Gain-Bandwidth Product Slew Rate GATE DRIVER Upper Gate Source Upper Gate Sink PROTECTION
Recommended Operating Conditions, unless otherwise noted. SYMBOL TEST CONDITIONS UNITS
UGATE Open
VOCSET 4.5V VOCSET 4.5V
1.26
10.4
OPEN 200k VOSC OPEN
VP-P
-1.5
+1.5
COMP 10pF
V/µs
IUGATE RUGATE
VBOOT VPHASE 12V, VUGATE
Over-Voltage Trip (VSEN/DACOUT) OCSET Current Source Sourcing Current Soft Start Current IOCSET IOVP VOCSET 4.5VDC VSEN 5.5V; VOVP
HIP6008
Electrical Specifications
PARAMETER POWER GOOD Upper Threshold (VSEN/DACOUT) Lower Threshold (VSEN/DACOUT) Hysteresis (VSEN/DACOUT) PGOOD Voltage VPGOOD VSEN Rising VSEN Falling Upper Lower Threshold IPGOOD -5mA Recommended Operating Conditions, unless otherwise noted. (Continued) SYMBOL TEST CONDITIONS UNITS
Typical Performance Curves
1000 RESISTANCE PULLUP +12V PULLDOWN (mA) SWITCHING FREQUENCY (kHz) 1000 CUGATE 10pF CUGATE 1000pF CUGATE 3300pF
1000
SWITCHING FREQUENCY (kHz)
FIGURE RESISTANCE FREQUENCY
FIGURE BIAS SUPPLY CURRENT FREQUENCY
HIP6008 Functional OCSET VID0 VID1 VID2 VID3 COMP VSEN RT/OVP BOOT UGATE PHASE PGOOD
PGOOD (Pin PGOOD open collector output used indicate status converter output voltage. This pulled when converter output within ±10% DACOUT reference voltage. PHASE (Pin Connect PHASE upper MOSFET source. This used monitor voltage drop across MOSFET over-current protection. This also provides return path upper gate drive. UGATE (Pin
OCSET (Pin Connect resistor (ROCSET) from this drain upper MOSFET. ROCSET, internal 200µA current source (IOCS), upper MOSFET on-resistance. (rDS(ON)) converter over-current (OC) trip point according following equation:
ROCSET PEAK
Connect UGATE upper MOSFET gate. This provides gate drive upper MOSFET. BOOT (Pin This provides bias voltage upper MOSFET driver. bootstrap circuit used create BOOT voltage suitable drive standard N-Channel MOSFET. (Pin Provide bias supply chip this pin. RT/OVP (Pin This multiplexed, providing functions. first function oscillator switching frequency adjustment. placing resistor (RT) from this GND, nominal 200KHz switching frequency increased according following equation:
200kHz
over-current trip cycles soft-start function. (Pin Connect capacitor from this ground. This capacitor, along with internal 10µA current source, sets softstart interval converter. VID0-3 (Pins 3-6) VID0-3 input pins 4-bit DAC. states these four pins program internal voltage reference (DACOUT). level DACOUT sets converter output voltage. also sets PGOOD thresholds. Table specifies DACOUT combinations inputs. COMP (Pin (Pin COMP available external pins error amplifier. inverting input error amplifier COMP error amplifier output. These pins used compensate voltage-control feedback loop converter. (Pin Signal ground voltage levels measured with respect this pin.
Conversely, connecting pull-up resistor (RT) from this reduces switching frequency according following equation:
200kHz
second function this drive external event overvoltage condition. VSEN (Pin This connected converters output voltage. PGOOD comparator circuits this signal report output voltage status overvoltage protection.
HIP6008 Functional Initialization HIP6008 automatically initializes upon receipt power. Special sequencing input supplies necessary. Power-On Reset (POR) function continually monitors input supply voltages. monitors bias voltage input voltage (VIN) OCSET pin. level OCSET equal less fixed voltage drop (see over-current protection). function initiates soft start operation after both input supply voltages exceed their thresholds. operation with single +12V power source, equivalent +12V power source must exceed rising threshold before initiates operation. Soft Start function initiates soft start sequence. internal 10µA current source charges external capacitor (CSS) Soft start clamps error amplifier output (COMP pin) reference input terminal error amp) voltage. Figure shows soft start interval with 0.1µF. Initially clamp error amplifier (COMP pin) controls converter's output voltage. Figure voltage reaches valley oscillator's triangle wave. oscillator's triangular waveform compared ramping error amplifier voltage. This generates PHASE pulses increasing width that charge output capacitor(s). This interval increasing pulse width continues With sufficient output voltage, clamp reference input controls output voltage. This interval between Figure voltage exceeds DACOUT voltage output voltage regulation. This method provides rapid controlled output voltage rise. PGOOD signal toggles `high' when output voltage (VSEN pin) within DACOUT. hysteresis built into power good comparators prevents PGOOD oscillation nominal output voltage ripple. Over-Current Protection over-current function protects converter from shorted output using upper MOSFET's on-resistance, rDS(ON) monitor current. This method enhances converter's efficiency reduces cost eliminating current sensing resistor. over-current function cycles soft-start function hiccup mode provide fault protection. resistor (ROCSET) programs over-current trip level. internal 200µA current sink develops voltage across ROCSET that referenced VIN. When voltage across upper MOSFET (also referenced VIN) exceeds voltage across ROCSET, over-current function initiates soft-start sequence. soft-start function discharges with 10µA current sink inhibits operation. soft-start function recharges CSS, operation resumes with error amplifier clamped voltage. Should overload occur while recharging CSS, soft start function inhibits operation while fully charging complete cycle. Figure shows this operation with overload condition. Note that inductor current increases over during charging interval causes over-current trip. converter dissipates very little power with this method. measured input power conditions Figure 2.5W.
SOFT-START OUTPUT INDUCTOR
TIME (20ms/DIV)
PGOOD (2V/DIV)
FIGURE OVER-CURRENT OPERATION
over-current function will trip peak inductor current (IPEAK) determined
OCSET ROCSET PEAK
OUTPUT VOLTAGE (1V/DIV)
SOFT-START (1V/DIV)
TIME (5ms/DIV)
where IOCSET internal OCSET current source (200µA typical). trip point varies mainly MOSFET's rDS(ON) variations. avoid over-current tripping normal operating load range, find ROCSET resistor from equation above with: maximum rDS(ON) highest junction temperature. minimum IOCSET from specification table. Determine IPEAK IPEAK IOUT(MAX) (I)/2, where output inductor ripple current.
FIGURE SOFT START INTERVAL
HIP6008
equation ripple current section under component guidelines titled `Output Inductor Selection'. small ceramic capacitor should placed parallel with ROCSET smooth voltage across ROCSET presence switching noise input voltage. Output Voltage Program output voltage HIP6008 converter programmed discrete levels between 2.0VDC 3.5VDC. voltage identification (VID) pins program internal voltage reference (DACOUT) with 4-bit digital-to-analog converter (DAC). level DACOUT also sets PGOOD thresholds. Table specifies DACOUT voltage combinations open short connections pins. output voltage should adjusted while converter delivering power. Remove input power before changing output voltage. Adjusting output voltage during operation could toggle PGOOD signal exercise overvoltage protection.
TABLE OUTPUT VOLTAGE PROGRAM NAME VID3 VID2 VID1 VID0 NOMINAL DACOUT VOLTAGE FIGURE PRINTED CIRCUIT BOARD POWER GROUND PLANES ISLANDS
RETURN LOAD UGATE PHASE VOUT
Application Guidelines
Layout Considerations high frequency switching converter, layout very important. Switching current from power device
BAND REFERENCE ERROR AMPLIFIER COMP
1.26V 21.5k VID0 10.7k VID1 5.4k VID2 2.7k VID3
DACOUT
1.7k
2.9k
FIGURE FUNCTION SCHEMATIC
another generate voltage transients across impedances interconnecting bond wires circuit traces. These interconnecting impedances should minimized using wide, short printed circuit traces. critical components should located close together possible using ground plane construction single point grounding.
HIP6008
NOTE: Connected VSS, OPEN
function precision non-inverting summation amplifier shown Figure resistor values shown only approximations actual precision values used. Grounding combination pins increases DACOUT voltage. `open' circuit voltage pins band reference voltage, 1.26V.
Figure shows critical power components converter. minimize voltage overshoot interconnecting wires indicated heavy lines should part ground power plane printed circuit board. components shown Figure should located close together possible. Please note that capacitors each represent numerous physical capacitors. Locate HIP6008 within inches MOSFET, circuit traces MOSFET's gate source connections from HIP6008 must sized handle peak current.
HIP6008
+VIN BOOT CBOOT VOUT LOAD
HIP6008
PHASE +12V
erence voltage level. error amplifier (Error Amp) output (VE/A) compared with oscillator (OSC) triangular wave provide pulse-width modulated (PWM) wave with amplitude PHASE node. wave smoothed output filter CO). modulator transfer function small-signal transfer function VOUT/VE/A. This function dominated Gain output filter CO), with double pole break frequency zero FESR. Gain modulator simply input voltage (VIN) divided peak-to-peak oscillator voltage VOSC. Modulator Break Frequency Equations
CVCC
FIGURE PRINTED CIRCUIT BOARD SMALL SIGNAL LAYOUT GUIDELINES
Figure shows circuit traces that require additional layout consideration. single point ground plane construction circuits shown. Minimize leakage current paths locate capacitor, close because internal current source only 10µA. Provide local decoupling between pins. Locate capacitor, CBOOT close practical BOOT PHASE pins.
Feedback Compensation
COMPARATOR VOSC DRIVER PHASE (PARASITIC) VE/A ERROR REFERENCE VOUT
compensation network consists error amplifier (internal HIP6008) impedance networks ZFB. goal compensation network provide closed loop transfer function with highest crossing frequency (f0dB) adequate phase margin. Phase margin difference between closed loop phase f0dB 180o. equations below relate compensation network's poles, zeros gain components (R1, Figure these guidelines locating poles zeros compensation network: Pick Gain (R2/R1) desired converter bandwidth Place 1STZero Below Filter's Double Pole (~75% FLC) Place Zero Filter's Double Pole Place Pole Zero Place Pole Half Switching Frequency Check Gain against Error Amplifier's Open-Loop Gain Estimate Phase Margin Repeat Necessary Compensation Break Frequency Equations
DETAILED COMPENSATION COMPONENTS VOUT
COMP
HIP6008
DACOUT
Figure shows asymptotic plot DC-DC converter's gain frequency. actual Modulator Gain high gain peak high factor output filter shown Figure Using above guidelines should give Compensation Gain similar curve plotted. open loop error amplifier gain bounds compensation gain. Check compensation gain with capabilities error amplifier. Closed Loop Gain constructed log-log graph Figure adding Modulator Gain Compensation Gain dB). This equivalent multiplying modulator transfer function compensation transfer function plotting gain. compensation gain uses external impedance networks provide stable, high bandwidth (BW) overall loop. stable control loop gain crossing with -20dB/decade slope phase margin greater than degrees. Include worst case component variations when determining phase margin.
FIGURE VOLTAGE MODE BUCK CONVERTER COMPENSATION DESIGN
Figure highlights voltage-mode control loop buck converter. output voltage (VOUT) regulated Ref-
HIP6008
Output Inductor Selection
GAIN (dB) FESR 100K MODULATOR GAIN 20LOG (R2/R1) 20LOG (VIN /VOSC) COMPENSATION GAIN CLOSED LOOP GAIN OPEN LOOP ERROR GAIN
output inductor selected meet output voltage ripple requirements minimize converter's response time load transient. inductor value determines converter's ripple current ripple voltage function ripple current. ripple voltage current approximated following equations:
Increasing value inductance reduces ripple current voltage. However, large inductance values reduce converter's response time load transient. parameters limiting converter's response load transient time required change inductor current. Given sufficiently fast control loop design, HIP6008 will provide either 100% duty cycle response load transient. response time time required slew inductor current from initial current value transient current level. During this interval difference between inductor current transient current level must supplied output capacitor. Minimizing response time minimize output capacitance required. response time transient different application load removal load. following equations give approximate response time interval application removal transient load:
TRAN RISE TRAN
FREQUENCY (Hz)
FIGURE ASYMPTOTIC BODE PLOT CONVERTER GAIN
Component Selection Guidelines
Output Capacitor Selection output capacitor required filter output supply load transient current. filtering requirements function switching frequency ripple current. load transient requirements function slew rate (di/dt) magnitude transient load current. These requirements generally with capacitors careful layout. Modern microprocessors produce transient load rates above 1A/ns. High frequency capacitors initially supply transient slow current load rate seen bulk capacitors. bulk filter capacitor values generally determined (Effective Series Resistance) voltage rating requirements rather than actual capacitance requirements. High frequency decoupling capacitors should placed close power pins load physically possible. careful inductance circuit board wiring that could cancel usefulness these inductance components. Consult with manufacturer load specific decoupling requirements. example, Intel recommends that high frequency decoupling Pentium composed least forty (40) ceramic capacitors 1206 surface-mount package. only specialized low-ESR capacitors intended switching-regulator applications bulk capacitors. bulk capacitor's will determine output ripple voltage initial voltage drop after high slew-rate transient. aluminum electrolytic capacitor's value related case size with lower available larger case sizes. However, equivalent series inductance (ESL) these capacitors increases with case size reduce usefulness capacitor high slew-rate transient loading. Unfortunately, specified parameter. Work with your capacitor supplier measure capacitor's impedance with frequency select suitable component. most cases, multiple electrolytic capacitors small case size perform better than single large case capacitor.
where: ITRAN transient load current step, tRISE response time application load, tFALL response time removal load. With input source, worst case response time either application removal load dependent upon DACOUT setting. sure check both these equations minimum maximum output levels worst case response time. With +12V input, output voltage level equal DACOUT, tFALL longest response time. Input Capacitor Selection input bypass capacitors control voltage overshoot across MOSFETs. small ceramic capacitors high frequency decoupling bulk capacitors supply current needed each time turns Place small ceramic capacitors physically close MOSFETs between drain anode Schottky diode important parameters bulk input capacitor voltage rating current rating. reliable operation, select bulk capacitor with voltage current ratings above maximum input voltage largest current required circuit. capacitor voltage rating should least 1.25 times greater than maximum input voltage voltage rating times conservative guideline. current rating requirement
HIP6008
input capacitor buck regulator approximately load current. through hole design, several electrolytic capacitors (Panasonic series Nichicon series Sanyo MVGX equivalent) needed. surface mount designs, solid tantalum capacitors used, caution must exercised with regard capacitor surge current rating. These capacitors must capable handling surge-current power-up. series available from AVX, 593D series from Sprague both surge current tested. MOSFET Selection/Considerations HIP6008 requires N-channel power MOSFET. should selected based upon rDS(ON), gate supply requirements, thermal management requirements. high-current applications, MOSFET power dissipation, package selection heatsink dominant design factors. power dissipation includes loss components; conduction loss switching loss. conduction losses largest component power dissipation MOSFET. Switching losses also contribute overall MOSFET power loss (see equations below). These equations assume linear voltage-current transitions approximations. gate-charge losses dissipated HIP6008 don't heat MOSFET. However, large gate-charge increases switching interval, tSW, which increases upper MOSFET switching losses. Ensure that MOSFET within maximum junction temperature high ambient temperature calculating temperature rise according package thermal-resistance specifications. separate heatsink necessary depending upon MOSFET power, package type, ambient temperature flow.
COND Where: duty cycle switching interval, switching frequency
+12V DBOOT +12V
BOOT
HIP6008
UGATE PHASE
CBOOT NOTE: VG-S
FIGURE UPPER GATE DRIVE BOOTSTRAP OPTION
systems where main input voltage 5VDC less. peak upper gate-to-source voltage approximately less input supply. main power 12VDC bias, gate-to-source voltage logic-level MOSFET good choice under these conditions.
+12V LESS BOOT
HIP6008
UGATE PHASE NOTE: VG-S
FIGURE UPPER GATE DRIVE DIRECT DRIVE OPTION
Standard-gate MOSFETs normally recommended with HIP6008. However, logic-level gate MOSFETs used under special circumstances. input voltage, upper gate drive level, MOSFET's absolute gate-tosource voltage rating determine whether logic-level MOSFETs appropriate. Figure shows upper gate drive (BOOT pin) supplied bootstrap circuit from VCC. boot capacitor, CBOOT, develops floating supply voltage referenced PHASE pin. This supply refreshed each cycle voltage less boot diode drop (VD) when Schottky diode, conducts. Logic-level MOSFETs only used MOSFET's absolute gate-to-source voltage rating exceeds maximum voltage applied VCC. Figure shows upper gate drive supplied direct connection VCC. This option should only used converter
Schottky Selection Rectifier conducts when upper MOSFET off. diode should Schottky type power losses. power dissipation Schottky rectifier approximated
COND Where: duty cycle Schottky forward voltage drop
addition power dissipation, package selection heatsink requirements main design tradeoffs choosing Schottky rectifier. Since three factors interrelated, selection process iterative procedure. maximum junction temperature rectifier must remain below manufacturer's specified value, typically 125oC. using
HIP6008
package thermal resistance specification Schottky power dissipation equation (shown above), junction temperature rectifier estimated. sure available airflow ambient temperature determine junction temperature rise. HIP6008 DC-DC Converter Application Circuit.
HIP6008 DC-DC Converter Application Circuit
figure below shows application circuit DC-DC Converter Intel Pentium microprocessor. Detailed information circuit, including complete Bill-of-Materials circuit board description, found Application Note AN9664. AN9664 details HIP6003EVAL1 evaluation board. HIP6008 pin-for-pin compatible with HIP6003 evaluated HIP6003EVAL1 board. Harris' home page web: http://www.semi.harris.com Harris AnswerFAX (407-724-7800) document #99664.
+12V
1.5µH C1-C4 330µF C19-C20 4148 1000pF 1.1K 0.1µF VOUT PWRGD
2N6394
+12V
5.1V SPARE 0.1µF RT/OVP VID0 VID1 VID2 VID3 VID0 VID1 VID2 VID3 0.1µF
OCSET PGOOD BOOT UGATE PHASE VSEN
MONITOR PROTECTION
HIP6008
C5-C12 1000µF
750k
33pF
COMP
1000pF 90.9K 3.01K SPARE 0.1µF
SPARE
Component Selection Notes: C5-C12 each 1000µF 6.3W VDC, Sanyo MV-GX Equivalent C1-C4 each 330µF VDC, Sanyo MV-GX Equivalent Core: Micrometals T60-52; Each Winding: Turns 17AWG Core: Micrometals T44-52; Winding: Turns 18AWG 1N4148 Equivalent 25A, Schottky, Motorola MBR2535CTL Equivalent Harris MOSFET; RFP70N03 FIGURE PENTIUM DC-DC CONVERTER
HIP6008 Small Outline Plastic Packages (SOIC)
INDEX AREA SEATING PLANE 0.25(0.010)
M16.15 (JEDEC MS-012-AC ISSUE
LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE INCHES SYMBOL
MILLIMETERS 1.35 0.10 0.33 0.19 9.80 3.80 1.75 0.25 0.51 0.25 10.00 4.00 NOTES Rev. 12/93
0.0532 0.0040 0.013 0.0075 0.3859 0.1497
0.0688 0.0098 0.020 0.0098 0.3937 0.1574
0.10(0.004)
0.050 0.2284 0.0099 0.016 0.2440 0.0196 0.050
1.27 5.80 0.25 0.40 6.20 0.50 1.27
0.25(0.010)
NOTES: Symbols defined Series Symbol List" Section Publication Number Dimensioning tolerancing ANSI Y14.5M-1982. Dimension does include mold flash, protrusions gate burrs. Mold flash, protrusion gate burrs shall exceed 0.15mm (0.006 inch) side. Dimension does include interlead flash protrusions. Interlead flash protrusions shall exceed 0.25mm (0.010 inch) side. chamfer body optional. present, visual index feature must located within crosshatched area. length terminal soldering substrate. number terminal positions. Terminal numbers shown reference only. lead width "B", measured 0.36mm (0.014 inch) greater above seating plane, shall exceed maximum value 0.61mm (0.024 inch) Controlling dimension: MILLIMETER. Converted inch dimensions necessarily exact.
Harris Semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Harris Semiconductor products sold description only. Harris Semiconductor reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Harris believed accurate reliable. However, responsibility assumed Harris subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Harris subsidiaries.
Sales Office Headquarters
general information regarding Harris Semiconductor products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor 883, Mail Stop 53-210 Melbourne, 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor Ltd. Tannery Road Cencon #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400

Other recent searches


UT131 - UT131   UT131 Datasheet
S6U3R - S6U3R   S6U3R Datasheet
MGSR12 - MGSR12   MGSR12 Datasheet
MGSG12 - MGSG12   MGSG12 Datasheet
MGSY12 - MGSY12   MGSY12 Datasheet
MGSB12 - MGSB12   MGSB12 Datasheet
MGSW12 - MGSW12   MGSW12 Datasheet
MGSR24 - MGSR24   MGSR24 Datasheet
MGSG24 - MGSG24   MGSG24 Datasheet
MGSY24 - MGSY24   MGSY24 Datasheet
MAPL000817-015C00 - MAPL000817-015C00   MAPL000817-015C00 Datasheet
DSP56F805 - DSP56F805   DSP56F805 Datasheet
CDRH50D18R - CDRH50D18R   CDRH50D18R Datasheet
BTRS-5920G - BTRS-5920G   BTRS-5920G Datasheet
AN3672NFBP - AN3672NFBP   AN3672NFBP Datasheet

 

Privacy Policy | Disclaimer
© 2012 Datasheet Archive