45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power
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RFP45N03L, RF1S45N03L, RF1S45N03LSM
45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
JEDEC TO-220AB
SOURCE DRAIN GATE
December 1995
Features
45A, rDS(ON) 0.022 Temperature Compensating PSPICE Model Driven Directly from CMOS, NMOS, Circuits Peak Current Pulse Width Curve Rating Curve +175
DRAIN (FLANGE)
JEDEC TO-262AA
SOURCE DRAIN GATE DRAIN (FLANGE)
Operating Temperature
Description
RFP45N03L, RF1S45N03L, RF1S45N03LSM N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those circuits, gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers relay drivers. These transistors operated directly from integrated circuits.
PACKAGE AVAILABILITY PART NUMBER RFP45N03L RF1S45N03L RF1S45N03LSM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP45N03L F45N03L F45N03L
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
Symbol
NOTE: When ordering, entire part number; e.g. RFP45N03L. suffix, obtain TO-263AB variant tape reel, e.g. RF1S45N03LSM9A.
Formerly developmental type TA49030.
Absolute Maximum Ratings
+25oC RFP45N03L, RF1S45N03L, RF1S45N03LSM Refer Peak Current Curve Refer Curve 0.606 +175 UNITS
Drain-Source Voltage VDSS Drain-Gate Voltage. VDGR Gate-Source Voltage Drain Current Continuous Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation +25oC Derate above +25oC. Operating Storage Temperature TSTG, Soldering Temperature Leads
W/oC
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1995
File Number
4005.1
5-58
Specifications RFP45N03L, RF1S45N03L, RF1S45N03LSM
Electrical Specifications
PARAMETERS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current +25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA 30V, ±10V 45A, 15V, 45A, 0.33, +25oC +150oC 25V, 1MHz 24V, 45A, 0.533 1650 0.022 1.65 UNITS
oC/W oC/W
Gate-Source Leakage Current Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient
IGSS rDS(ON) tD(ON) tD(OFF) tOFF QG(TOT) QG(5) QG(TH) CISS COSS CRSS
Source-Drain Diode Specifications
PARAMETERS Forward Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 45A, dISD/dt 100A/µs UNITS
5-59
RFP45N03L, RF1S45N03L, RF1S45N03LSM Typical Performance Curves
+25oC DRAIN CURRENT 100µs ZJC, NORMALIZED THERMAL RESPONSE SINGLE PULSE 0.01 10-5 NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 10-1
10ms OPERATION THIS AREA LIMITED rDS(ON) 100ms
VDSS
VDS, DRAIN-TO-SOURCE VOLTAGE
10-4
RECTANGULAR PULSE DURATION
FIGURE SAFE OPERATING AREA CURVE
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
+25oC IDM, PEAK CURRENT CAPABILITY TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION
(oC) CASE TEMPERATURE
10-5
10-4
10-3 10-2 10-1 PULSE WIDTH
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT TEMPERATURE
FIGURE PEAK CURRENT CAPABILITY
PULSE DURATION 250µs, +25oC ID(ON), ON-STATE DRAIN CURRENT -55oC
+175oC
DRAIN CURRENT
4.5V
+25oC
3.5V
PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5% VGS, GATE-TO-SOURCE VOLTAGE
VDS, DRAIN-TO-SOURCE VOLTAGE
FIGURE TYPICAL SATURATION CHARACTERISTICS
FIGURE TYPICAL TRANSFER CHARACTERISTICS
5-60
RFP45N03L, RF1S45N03L, RF1S45N03LSM Typical Performance Curves (Continued)
BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 250µA VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE VDS, 250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
PULSE DURATION 250µs, rDS(ON), NORMALIZED RESISTANCE rDS(ON), ON-STATE RESISTANCE
PULSE DURATION 250µs
JUNCTION TEMPERATURE (oC)
VGS, GATE-TO-SOURCE VOLTAGE
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
FIGURE TYPICAL rDS(ON) VARYING CONDITIONS GATE VOLTAGE DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
SWITCHING TIME (ns) tD(OFF) tD(ON) RGS, GATE-TO-SOURCE RESISTANCE
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.67 IG(REF) 0.6mA TIME (µs)
FIGURE TYPICAL SWITCHING TIME FUNCTION GATE RESISTANCE
FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT. REFER HARRIS APPLICATION NOTES AN7254 AN7260
5-61
GATE-SOURCE VOLTAGE
15V, 45A, 0.333
BVDSS BVDSS
RFP45N03L, RF1S45N03L, RF1S45N03LSM Typical Performance Curves (Continued)
1MHz 2500 IAS, AVALANCHE CURRENT STARTING +25oC
CAPACITANCE (pF)
2000 CISS 1500
STARTING +150oC
1000 COSS CRSS
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.001 0.01 tAV, TIME AVALANCHE (ms)
VDS, DRAIN-TO-SOURCE VOLTAGE
FIGURE TYPICAL CAPACITANCE VOLTAGE
FIGURE UNCLAMPED INDUCTIVE SWITCHING. REFER HARRIS APPLICATION NOTES AN9321 AN9322
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
5-62
RFP45N03L, RF1S45N03L, RF1S45N03LSM Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tD(ON)
tOFF tD(OFF)
PULSE WIDTH
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
5-63
RFP45N03L, RF1S45N03L, RF1S45N03LSM
Temperature Compensated PSPICE Model RFP45N03L, RF1S45N03L, RF1S45N03LSM
.SUBCKT RFP45N03L
2.55e-9 2.64e-9 1.45e-9
DPLCAP
11/22/94
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 33.3 EVTO
GATE
RSCL2 MOS1 RSOURCE MOS2 RSCL1 DBREAK EBREAK
DRAIN LDRAIN
ESCL RDRAIN
DBODY
EVTO LGATE RGATE
LDRAIN 1e-9 LGATE 4.9e-9 LSOURCE 4.9e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 0.14e-3 RGATE 0.89 RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 10.31e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
LSOURCE SOURCE
RBREAK RVTO VBAT
VBAT 0.583 ESCL VALUE .MODEL DBDMOD 3.61e-13 5.06e-3 TRS1 3.05e-3 TRS2 7.57e-6 2.16e-9 2.18e-8) .MODEL DBKMOD 1.66e-1 TRS1 -2.97e-3 TRS2 7.57e-6) .MODEL DPLCAPMOD (CJO 0.96e-9 1e-30 .MODEL MOSMOD NMOS (VTO 2.313 53.82 1e-30 .MODEL RBKMOD (TC1 8.95e-4 -1e-7) .MODEL RDSMOD (TC1 3.82e-3 1.17e-5) .MODEL RSCLMOD (TC1 2.03e-3 0.45e-5) .MODEL RVTOMOD (TC1 -2.27e-3 -5.75e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -4.82 VOFF= -2.82) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -2.82 VOFF= -4.82) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -2.67 VOFF= 2.33) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 2.33 VOFF= -2.67) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
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