Dual, Noise, High Performance Uncompensated Operational Amplifier
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HA-5112/883
Dual, Noise, High Performance Uncompensated Operational Amplifier
Noise high performance words describing dual, uncompensated HA-5112/883. This general purpose amplifier offers array dynamic specifications including 12V/µs slew rate (min), 54MHz gain-bandwidth-product AVCL Complementing these outstanding parameters very noise specification 6nV/Hz 1kHz (max). Fabricated using Harris standard high frequency D.I. process, these operational amplifiers also offer excellent input specifications such 2.5mV (max) offset voltage 75nA (max) offset current. Complementing these specifications 100dB (min) open loop gain 55dB channel separation (min). HA-5112/883 also consumes very modest amount supply power (180mW/package). This impressive combination features make this amplifier ideally suited designs ranging from audio amplifiers active filters most demanding signal conditioning instrumentation circuits.
July 1994
Features
This Circuit Processed Accordance MIL-STD883 Fully Conformant Under Provisions Paragraph 1.2.1. Input Noise Voltage Density 1kHz. 6nV/Hz(Max) 4.3nV/Hz(Typ) High Slew Rate 12V/µs (Min) 20V/µs (Typ) Wide Gain Bandwidth Product (AVCL 54MHz Offset Voltage Drift 3µV/oC (Typ) High Open Loop Gain (Full Temp.). 100kV/V (Min) 250kV/V (Typ) High CMRR/PSRR (Full Temp.) 86dB (Min) 100dB (Typ) Offset Voltage Drift 3µV/oC (Typ) Crossover Distortion Standard Dual Pinout
Ordering Information Applications
High Quality Audio Preamplifiers High Active Filters Noise Function Generators Distortion Oscillators
HA7-5112/883 PART NUMBER HA2-5112/883 HA4-5112/883 TEMPERATURE RANGE -55oC +125oC -55oC +125oC -55oC +125oC PACKAGE Lead Ceramic Lead CerDIP
Noise Comparators
Pinouts
HA-5112/883 (CERDIP) VIEW HA-5112/883 (CLCC) VIEW
HA-5112/883 (METAL CAN) VIEW
OUT1 -IN1 -IN2 OUT2
OUT1 -IN1 +IN1
OUT2 -IN2 +IN2
-IN1 +IN1
OUT2 -IN2
+IN1
+IN2
V+IN2
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1994
Spec Number
3-119
511032-883 File Number 3711
Specifications HA-5112/883
Absolute Maximum Ratings
Voltage between Terminals Differential Input Voltage Voltage Either Input Terminal VPeak Output Current. Indefinite (One Amplifier Shorted Ground) Junction Temperature (TJ) +175oC Storage Temperature Range -65oC +150oC Rating. <2000V Lead Temperature (Soldering 10s) +300oC
Thermal Information
Thermal Resistance CerDIP Package 115oC/W 28oC/W Ceramic Package 65oC/W 15oC/W Metal Package 155oC/W 67oC/W Package Power Dissipation Limit +75oC CerDIP Package 870mW Ceramic Package 1.54W Metal Package 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package 8.7mW/oC Ceramic Package 15.4mW/oC Metal Package 6.5mW/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Temperature Range -55oC +125oC Operating Supply Voltage ±15V VINCM
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested VSUPPLY ±15V, RSOURCE 100, RLOAD 500k, VOUT Unless Otherwise Specified. GROUP SUBGROUPS Input Bias Current 10k, 100, 10k, +3V, -27V -CMR +27V, Large Signal Voltage Gain +AVOL VOUT +10V, VOUT -10V, +5V, +10V, -20V, VOUT -5V, +20V, -10V, VOUT LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC -2.0 -2.5 -200 -325 -200 -325 -125 UNITS kV/V kV/V kV/V kV/V
PARAMETERS Input Offset Voltage
SYMBOL
CONDITIONS
Input Offset Current
Common Mode Range
+CMR
-AVOL
Common Mode Rejection Ratio
+CMRR
-CMRR
Spec Number 3-120
511032-883
Specifications HA-5112/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested VSUPPLY ±15V, RSOURCE 100, RLOAD 500k, VOUT Unless Otherwise Specified. GROUP SUBGROUPS -VOUT1 +VOUT2 -VOUT2 Output Current +IOUT VOUT -IOUT VOUT Quiescent Power Supply Current +ICC VOUT IOUT -ICC VOUT IOUT Power Supply Rejection Ratio +PSRR VSUP 10V, +10V, -15V +20V, -15V VSUP 10V, +15V, -10V +15V, -20V LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETERS Output Voltage Swing
SYMBOL +VOUT1
CONDITIONS
-PSRR
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Table Intentionally Left Blank. Parameters Table
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized VSUPPLY ±15V, RLOAD CLOAD 50pF, AVCL 10V/V, Unless Otherwise Specified. LIMITS PARAMETERS Differential Input Resistance Input Noise Voltage Input Noise Current Gain Bandwidth Product SYMBOL GBWP CONDITIONS 1000Hz 1000Hz 200mV, 50kHz 200mV, 1MHz NOTES TEMPERATURE +25oC +25oC +25oC +25oC +25oC UNITS nV/Hz pA/Hz
Spec Number 3-121
511032-883
Specifications HA-5112/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized VSUPPLY ±15V, RLOAD CLOAD 50pF, AVCL 10V/V, Unless Otherwise Specified. LIMITS PARAMETERS Slew Rate SYMBOL Full Power Bandwidth Minimum Closed Loop Stable Gain Rise Fall Time FPBW CLSG Overshoot Output Resistance Quiescent Power Consumption Channel Separation ROUT CONDITIONS VOUT VOUT VPEAK 50pF VOUT +200mV VOUT -200mV VOUT +200mV VOUT -200mV Open Loop VOUT IOUT AVCL 100V/V, 100mVPEAK 10kHz, Referred Input NOTES TEMPERATURE +25oC +25oC +25oC -55oC +125oC UNITS V/µs V/µs
+25oC +25oC +25oC +25oC +25oC -55oC +125oC
+25oC
NOTES: Parameters listed Table controlled design process parameters directly tested final production. These parameters characterized upon initial design release, upon design changes. These parameters guaranteed characterization based upon data from multiple production runs which reflect within variation. Full Power Bandwidth guarantee based Slew Rate measurement using FPBW Slew Rate/(2VPEAK). Quiescent Power Consumption based upon Quiescent Supply Current test maximum. load outputs.). Measured between points.
TABLE ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group Test Requirements Groups Endpoints NOTE: applies Subgroup only. SUBGROUPS (SEE TABLE (Note
Spec Number 3-122
511032-883
HA-5112/883 Characteristics
DIMENSIONS: 98.4 67.3 mils mils 2500 1710 483µm 25.4µm METALLIZATION: Type: Thickness: GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, Phos.) Silox Thickness: Nitride Thickness: WORST CASE CURRENT DENSITY: 1.43 105A/cm2 10mA SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5112/883
V+IN1 -IN1 OUT1
+IN2
-IN2
OUT2
Spec Number 3-123
511032-883
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