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HA-5104/883
Noise, High Performance, Quad Operational Amplifier
noise high performance words describing unity gain stable HA-5104/883. This general purpose quad amplifier offers array dynamic specifications including 1V/µs slew rate (min), 8MHz bandwidth (typ). Complementing these outstanding parameters very noise specifications 4.3nV/Hz 1kHz (typ) 6nV/Hz (max). Fabricated using Harris standard high frequency D.I. process, these operational amplifiers also offer excellent input specifications such 2.5mV (max) offset voltage 75nA (max) offset current. Complementing these specifications 100dB (min) open loop gain 55dB channel separation (min). Economically, HA-5104/883 also consumes very moderate amount power (225mW package) while also saving board space cost. This impressive combination features make this amplifier ideally suited designs ranging from audio amplifiers active filters most demanding signal conditioning instrumentation circuits.
July 1994
Features
This Circuit Processed Accordance MIL-STD883 Fully Conformant Under Provisions Paragraph 1.2.1. Input Noise Voltage Density 1kHz. 6nV/Hz (Max) 4.3nV/Hz (Typ) Slew Rate 1V/µs (Min) 3V/µs (Typ) Unity Gain Bandwidth 8MHz (Typ) High Open Loop Gain (Full Temp) 100kV/V (Min) 250kV/V (Typ) High CMRR, PSRR (Full Temp) 86dB (Min) 100dB (Typ) Offset Voltage Drift 3µV/oC (Typ) Crossover Distortion Standard Quad Pinout
Applications
High Active Filters Audio Amplifiers Integrators Signal Generators Instrumentation Amplifiers
Ordering Information
PART NUMBER HA1-5104/883 HA4-5104/883 TEMPERATURE RANGE -55oC +125oC -55oC +125oC PACKAGE Lead CerDIP Lead Ceramic
Pinouts
HA-5104/883 (CERDIP) VIEW
-IN1 +IN1 +IN2 -IN2 -IN4 +IN4 +IN3 -IN3 +IN1 +IN2 -IN2 -IN3
HA-5104/883 (CLCC) VIEW
-IN1 -IN4 +IN4 +IN3
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1994
Spec Number
3-114
511014-883 File Number 3710
Specifications HA5104/883
Absolute Maximum Ratings
Voltage Between Terminals Differential Input Voltage Voltage Either Input Terminal VPeak Output Current Indefinite (One Amplifier Shorted Ground) Junction Temperature (TJ) +175oC Storage Temperature Range -65oC +150oC Rating. <2000V Lead Temperature (Soldering 10s) +300oC
Thermal Information
Thermal Resistance CerDIP Package 75oC/W 20oC/W Ceramic Package 65oC/W 15oC/W Package Power Dissipation Limit +75oC +175oC CerDIP Package 1.33W Ceramic Package 1.54W Package Power Dissipation Derating Factor Above +75oC CerDIP Package 13.3mW/oC Ceramic Package 15.4mW/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Temperature Range -55oC +125oC Operating Supply Voltage ±15V VINCM
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested VSUPPLY ±15V, RSOURCE 100, RLOAD 500k, VOUT Unless Otherwise Specified. GROUP SUBGROUPS Input Bias Current 10k, 100, 10k, +3V, -27V -CMR +27V, Large Signal Voltage Gain +AVOL VOUT +10V, VOUT -10V, +5V, +10V, -20V, VOUT -5V, +20V, -10V, VOUT LIMITS TEMPERATURE +25oC +125oC, -55oC -2.5 -3.0 -200 -325 -200 -325 -125 UNITS kV/V kV/V kV/V kV/V
PARAMETERS Input Offset Voltage
SYMBOL
CONDITIONS
+25oC +125oC, -55oC
+25oC +125oC, -55oC
Input Offset Current
+25oC +125oC, -55oC
Common Mode Range
+CMR
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
-AVOL
+25oC +125oC, -55oC
Common Mode Rejection Ratio
+CMRR
+25oC +125oC, -55oC
-CMRR
+25oC +125oC, -55oC
Spec Number 3-115
511014-883
Specifications HA5104/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested VSUPPLY ±15V, RSOURCE 100, RLOAD 500k, VOUT Unless Otherwise Specified. GROUP SUBGROUPS -VOUT1 +VOUT2 -VOUT2 Output Current +IOUT VOUT -IOUT VOUT Quiescent Power Supply Current +ICC VOUT IOUT -ICC VOUT IOUT Power Supply Rejection Ratio +PSRR VSUP 10V, +10V, -15V +20V, -15V VSUP 10V, +15V, -10V +15V, -20V LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC -6.5 -7.5 UNITS
PARAMETERS Output Voltage Swing
SYMBOL +VOUT1
CONDITIONS
-PSRR
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested VSUPPLY ±15V, RSOURCE RLOAD CLOAD 50pF, AVCL +1V/V, Unless Otherwise Specified. GROUP SUBGROUPS LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC UNITS V/µs V/µs
PARAMETERS Slew Rate
SYMBOL
CONDITIONS VOUT VOUT VOUT +200mV VOUT -200mV VOUT +200mV VOUT -200mV
Rise Fall Time
Overshoot
Spec Number 3-116
511014-883
Specifications HA5104/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized VSUPPLY ±15V, RLOAD CLOAD 50pF, AVCL 1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Differential Input Resistance Input Noise Voltage Density Input Noise Current Density Full Power Bandwidth Minimum Closed Loop Stable Gain Output Resistance Quiescent Power Consumption Channel Separation SYMBOL FPBW CLSG ROUT CONDITIONS 1000Hz 1000Hz VPEAK 50pF Open Loop VOUT IOUT AVCL 100V/V, 100mVPEAK 10kHz Referred Input NOTES TEMPERATURE +25oC +25oC +25oC +25oC -55oC +125oC +25oC -55oC +125oC UNITS nV/Hz pA/Hz
+25oC
NOTES: Parameters listed Table controlled design process parameters directly tested final production. These parameters characterized upon initial design release, upon design changes. These parameters guaranteed characterization based upon data from multiple production runs which reflect within variation. Full Power Bandwidth guarantee based Slew Rate measurement using FPBW Slew Rate/(2VPEAK). Quiescent Power Consumption based upon Quiescent Supply Current test maximum. load outputs.).
TABLE ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group Test Requirements Groups Endpoints NOTE: applies Subgroup only. SUBGROUPS (SEE TABLES (Note
Spec Number 3-117
511014-883
HA5104/883 Characteristics
DIMENSIONS: mils mils 2420 2530 483µm 25.4µm METALLIZATION: Type: Thickness: GLASSIVATION: Type: Nitride (Si3N4) over Silox (SIO2, Phos.) Silox Thickness: Nitride Thickness: WORST CASE CURRENT DENSITY: 1.43 A/cm2 SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA5104/883
+IN2 +IN1
-IN2
-IN1
OUT2 OUT3
OUT1 OUT4
-IN3
-IN4
+IN3
+IN4
Spec Number 3-118
511014-883
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