100MHz Current Feedback Amplifier HA-5004/883 current feedback am
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HA-5004/883
100MHz Current Feedback Amplifier
HA-5004/883 current feedback amplifier video/wideband amplifier optimized gain applications. design based current-mode feedback which allows amplifier achieve higher closed loop bandwidth than voltage-mode feedback operational amplifiers. Since feedback employed, HA-5004/883 offer better gain accuracy lower distortion than open loop buffers. Unlike conventional amps, bandwidth rise time HA5004/883 nearly independent closed loop gain. 100MHz bandwidth unity gain reduces only 65MHz gain HA-5004/883 used place conventional with significant improvement speed power product. Several features have been designed added value. thermal overload feature protects part against excessive junction temperature shutting down output. this feature needed, inhibited input (TOI). chip enable/disable (OE) input also provided; when chip disabled output high impedance. Finally, open collector output flag (TOL) provided indicate status chip. status flag goes indicate when chip disabled either internal Thermal Overload shutdown external disable. order maximize bandwidth output drive capacity, internal current limiting provided. However, current limiting applied pins which provide power separately output stage.
July 1994
Features
This Circuit Processed Accordance MILSTD-883 Fully Conformant Under Provisions Paragraph 1.2.1. Slew Rate 1000V/µs (Min) 1200V/µs (Typ) Output Current ±80mA (Min) ±100mA (Typ) Drives ±8.0V into (Min) ±9.5V into (Typ) VSUPPLY ±18V Thermal Overload Protection Output Flag Bandwidth Nearly Independent Gain Output Enable/Disable
Applications
Unity Gain Video/Wideband Buffer Video Gain Block High Speed Peak Detector Fiber Optic Transmitters Zero Insertion Loss Transmission Line Drivers Current Voltage Converter Radar Systems
Ordering Information
PART NUMBER HA1-5004/883 TEMPERATURE RANGE -55oC +125oC PACKAGE Lead CerDIP
Pinouts
HA-5004/883 (CERDIP) VIEW
+BAL -BAL
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1994
Spec Number
3-89
511053-883 File Number 3706
Specifications HA-5004/883
Absolute Maximum Ratings
Voltage between Terminals Differential Input Voltage Voltage Either Input Terminal VPeak Output Current Pulsed Duty Cycle .±300mA Continuous Output Current. .±120mA Junction Temperature (TJ) +175oC Storage Temperature Range -65oC +150oC Rating. <2000V Lead Temperature (Soldering 10s) +300oC
Thermal Information
Thermal Resistance CerDIP Package 73oC/W 18oC/W Package Power Dissipation Limit +75oC CerDIP Package 1.37W Package Power Dissipation Derating Factor Above +75oC CerDIP Package 13.7mW/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Temperature Range -55oC +125oC Operating Supply Voltage ±12V ±15V
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested +15V, -15V, 100, 250, 0.8V, 0.8V 2.0V, Unless Otherwise Specified. LIMITS PARAMETERS Input Offset Voltage SYMBOL CONDITIONS GROUP SUBGROUP Input Bias Current (Note Gain Error (Small Signal) SSGE ±100mV, ±5.0V, ±10V, Gain Error (Large Signal) LSGE1 LSGE2 Voltage Gain Gain Error Conditions (Note Transimpedence Gain Error Conditions (Note Output Voltage Swing ±VOUT1 ±15V, ±10V, ±10V, ±VOUT2 Output Current ±IOUT TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC -2.5 11.5 10.5 0.43 0.75 0.43 0.75 0.43 0.75 -11.5 -10.5 -9.0 -8.0 UNITS V/mA V/mA
Spec Number 3-90
511053-883
Specifications HA-5004/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested +15V, -15V, 100, 250, 0.8V, 0.8V 2.0V, Unless Otherwise Specified. LIMITS PARAMETERS Logic Input Voltage SYMBOL CONDITIONS Pins (Note GROUP SUBGROUP Pins Power Supply Rejection Ratio PSRR1 +10V, +20V -15V PSRR2 -10V, -20V +15V Power Supply Current +ICC -ICC NOTES: Inverting (FB) input impedance point; Bias Current Offset Current specified this terminal. Voltage Gain Gain Error conditions. Gain Error Transimpedance Gain Error Please refer Truth Table Applications Information section. 250, Gain Error conditions. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Table Intentionally Left Blank. Specifications Table
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized +15V, -15V, 250, 10pF, 0.8V, 0.8V 2.0V, Unless Otherwise Specified. LIMITS PARAMETERS Slew Rate SYMBOL CONDITIONS VOUT +10V VOUT -10V NOTES TEMPERATURE +25oC +25oC 1000 1000 UNITS V/µs V/µs
Spec Number 3-91
511053-883
Specifications HA-5004/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized +15V, -15V, 250, 10pF, 0.8V, 0.8V 2.0V, Unless Otherwise Specified. LIMITS PARAMETERS Rise Fall Time SYMBOL Full Power Bandwidth Quiescent Power Consumption NOTES: Parameters listed Table controlled design process parameters directly tested final production. These parameters characterized upon initial design release, upon design changes. These parameters guaranteed characterization based upon data from multiple production runs which reflect within variation. Measured between points. Full Power Bandwidth guarantee based Slew Rate measurement using FPBW Slew Rate/(2VPEAK). Power Consumption based upon Quiescent Supply Current test maximum. FPBW CONDITIONS VOUT +200mV, VOUT -200mV VPEAK NOTES TEMPERATURE +25oC +25oC +25oC -55oC +125oC 79.5 UNITS
TABLE ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group Test Requirements Groups Endpoints NOTE: applies Subgroup only. SUBGROUPS (SEE TABLE (Note
Spec Number 3-92
511053-883
HA-5004/883 Characteristics
DIMENSIONS: mils mils 1600 2370 483µm 25.4µm METALLIZATION: Type: Thickness: GLASSIVATION: Type: Nitride (Si3N4) over (Silox, Phos.) Silox Thickness: Nitride Thickness: WORST CASE CURRENT DENSITY: 104A/cm2 SUBSTRATE POTENTIAL (Powered Up): TRANSISTOR COUNT: PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5004/883
-BAL
+BAL
Spec Number 3-93
511053-883
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