Monolithic, Wideband, High Slew Rate, High Output Current Buffer
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HA-5002/883
Monolithic, Wideband, High Slew Rate, High Output Current Buffer
HA-5002/883 monolithic, wideband, high slew rate, high output current, buffer amplifier. Utilizing advantages Harris Dielectric Isolation technologies, HA-5002/883 current buffer offers 1300V/µs slew rate typically 1000V/µs minimum with 110MHz bandwidth. ±100mA minimum output current capability enhanced output impedance. monolithic HA-5002/883 will replace hybrid LH0002 with corresponding performance increases. These characteristics range from (typ) input impedance increased output voltage swing. Monolithic design technologies have allowed more precise buffer developed with more than order magnitude smaller gain error. voltage gain 0.98 guaranteed minimum with load 0.96 minimum with load. HA-5002/883 will provide many present hybrid users with higher degree reliability same time increase overall circuit performance.
July 1994
Features
This Circuit Processed Accordance MIL-STD883 Fully Conformant Under Provisions Paragraph 1.2.1. Voltage Gain 1k). .0.98 (Min) 0.995 (Typ) 100) .0.96 (Min) 0.971 (Typ) High Input Impedance 1.5M (Min) (Typ) Output Impedance (Max) (Typ) Very High Slew Rate 1000V/µs (Min) 1300V/µs (Typ) Wide Small Signal Bandwidth. .110MHz (Typ) High Output Current 100mA (Min) High Pulsed Output Current 400mA (Max) Monolithic Dielectric Isolation Construction Replaces Hybrid LH0002
Ordering Information
PART NUMBER HA2-5002/883 HA4-5002/883 HA7-5002/883 TEMPERATURE RANGE -55oC +125oC -55oC +125oC -55oC +125oC PACKAGE Lead Ceramic Lead CerDIP
Applications
Line Driver Data Acquisition 110MHz Buffer High Power Current Booster High Power Current Source Sample Holds Radar Cable Driver Video Products
Pinouts
HA-5002/883 (CERDIP) VIEW
HA-5002/883 (CLCC) VIEW
HA-5002/883 (METAL CAN) VIEW
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1994
Spec Number
3-258
511017-883 File Number 3705
Specifications HA-5002/883
Absolute Maximum Ratings
Voltage Between Terminals Input Voltage. Equal Supplies Peak Output Current (50ms Off) .±400mA Junction Temperature (TJ) +175oC Storage Temperature Range -65oC +150oC Rating. <4000V Lead Temperature (Soldering 10s) +300oC
Thermal Information
Thermal Resistance CerDIP Package 115oC/W 28oC/W Ceramic Package 65oC/W 15oC/W Metal Package 155oC/W 67oC/W Package Power Dissipation Limit +75oC +175oC CerDIP Package 870mW Ceramic Package 1.54W Metal Package 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package 8.7mW/oC Ceramic Package 15.4mW/oC Metal Package 6.5mW/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Temperature Range -55oC +125oC Operating Supply Voltage ±12V ±15V
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested VSUPPLY ±12V ±15V, RSOURCE CLOAD 10pF, Unless Otherwise Specified. LIMITS PARAMETERS Input Offset Voltage SYMBOL VIO1 CONDITIONS VSUP ±15V GROUP SUBGROUPS VIO2 VSUP ±12V Input Bias Current VSUP ±15V, VSUP ±12V, Voltage Gain +AV1 VSUP ±12V, VSUP ±12V, -10V VSUP ±12V, 100, VSUP ±12V, 100, -10V VSUP ±15V, 100, VSUP ±15V, 100, -10V TEMPERATURE +25oC +125oC, -55oC 0.98 0.98 0.98 0.98 0.96 UNITS
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
-AV1
+25oC +125oC, -55oC
Voltage Gain
+AV2 -AV2
+25oC +25oC +25oC +25oC
0.96
Voltage Gain
+AV3 -AV3
0.96
0.96
Spec Number 3-259
511017-883
Specifications HA-5002/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested VSUPPLY ±12V ±15V, RSOURCE CLOAD 10pF, Unless Otherwise Specified. LIMITS PARAMETERS Voltage Gain SYMBOL +AV4 CONDITIONS VSUP ±15V, +10V VSUP ±15V, -10V VSUP ±15V, 100, +15V VSUP ±15V, 100, -15V VSUP ±15V, +15V VSUP ±15V, -15V VSUP ±12V, +12V VSUP ±12V, -12V VSUP ±15V, VOUT +10V VSUP ±15V, VOUT -10V VSUP ±12V, VOUT +10V VSUP ±12V, VOUT -10V VSUP ±5V, +20V, -15V, +10V, -15V VSUP ±5V, +15V, -20V, +15V, -10V VSUP ±5V, +17V, -12V, +7V, -12V VSUP ±5V, +12V, -17V, +12V, GROUP SUBGROUPS TEMPERATURE +25oC +125oC, -55oC 0.99 0.99 0.99 0.99 -100 -100 -100 -100 UNITS
-AV4
+25oC +125oC, -55oC +25oC +125oC, -55oC
Output Voltage Swing
+VOUT1
-VOUT1
+25oC +125oC, -55oC +25oC +125oC, -55oC
+VOUT2
-VOUT2
+25oC +125oC, -55oC +25oC +125oC, -55oC
+VOUT3
-VOUT3
+25oC +125oC, -55oC +25oC +125oC, -55oC
Output Current
+IOUT1
-IOUT1
+25oC +125oC, -55oC
+IOUT2
+25oC +125oC, -55oC
-IOUT2
+25oC +125oC, -55oC
Power Supply Rejection Ratio
+PSRR1
+25oC +125oC, -55oC
-PSRR1
+25oC +125oC, -55oC +25oC +125oC, -55oC
+PSRR2
-PSRR2
+25oC +125oC, -55oC
Spec Number 3-260
511017-883
Specifications HA-5002/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested VSUPPLY ±12V ±15V, RSOURCE CLOAD 10pF, Unless Otherwise Specified. LIMITS PARAMETERS Power Supply Current SYMBOL +ICC1 CONDITIONS VSUP ±15V, VOUT VSUP ±15V, VOUT VSUP ±12V, VOUT VSUP ±12V, VOUT GROUP SUBGROUPS TEMPERATURE +25oC +125oC, -55oC UNITS
-ICC1
+25oC +125oC, -55oC
+ICC2
+25oC +125oC, -55oC
-ICC2
+25oC +125oC, -55oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Table Intentionally Left Blank. Specifications Table
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized VSUPPLY ±15V ±12V, RLOAD CLOAD 10pF, Unless Otherwise Specified. LIMITS PARAMETERS Input Resistance SYMBOL RIN1 RIN2 Slew Rate +SR1 CONDITIONS VSUP ±15V VSUP ±12V VSUP ±15V, VOUT VSUP ±15V, VOUT VSUP ±12V, VOUT VSUP ±12V, VOUT VSUP ±15V ±12V, VOUT +500mV VSUP ±15V ±12V, VOUT -500mV NOTES TEMPERATURE +25oC +25oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC 1000 1000 1000 1000 1000 1000 1000 1000 UNITS V/µs V/µs V/µs V/µs V/µs V/µs V/µs V/µs
-SR1
+SR2
-SR2
Rise Fall Time
Spec Number 3-261
511017-883
Specifications HA-5002/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized VSUPPLY ±15V ±12V, RLOAD CLOAD 10pF, Unless Otherwise Specified. LIMITS PARAMETERS Overshoot SYMBOL CONDITIONS VSUP ±12V ±15V, VOUT +500mV VSUP ±12V ±15V, VOUT -500mV VSUP ±15V, IOUT VSUP ±12V, IOUT VSUP ±12V VSUP ±12V NOTES TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +25oC UNITS
Quiescent Power Consumption
Output Resistance
ROUT1 ROUT2
NOTES: Parameters listed Table controlled design process parameters directly tested final production. These parameters characterized upon initial design release, upon design changes. These parameters guaranteed characterization based upon data from multiple production runs which reflect within variation. Measured between points. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. load outputs.)
TABLE ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group Test Requirements Groups Endpoints NOTE: applies Subgroup only. SUBGROUPS (SEE TABLE (Note
Spec Number 3-262
511017-883
HA-5002/883 Characteristics
DIMENSIONS: mils mils 2050 2030 483µm 25.4µm METALLIZATION: Type: Thickness: GLASSIVATION: Type: Nitride Thickness: WORST CASE CURRENT DENSITY: A/cm2 3.6mA SUBSTRATE POTENTIAL (Powered Up): V1TRANSISTOR COUNT: PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5002/883
(ALT) (ALT)
Spec Number 3-263
511017-883
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