High Voltage Operational Amplifier HA-2640/883 monolithic operati
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HA-2640/883
High Voltage Operational Amplifier
HA-2640/883 monolithic operational amplifier designed deliver unprecedented dynamic specification high voltage internally compensated device. This dielectrically isolated device offer very values offset voltage offset current coupled with large output voltage swing common mode input voltage. maximum reliability, HA-2640/883 offers unconditional output overload protection through output short circuit current limiting. This circuitry will limit output typically ±25mA output drive current. These amplifiers deliver ±35V common mode input voltage swing, ±35V output voltage swing, ±40V supply range such designs regulators, power supplies, industrial control systems. 5MHz typical gain-bandwidth product 5V/µs slew rate (typ) make these devices excellent components high performance signal conditioning applications. insure compliance, devices 100% tested slew rate, rise/fall time overshoot. Outstanding input output voltage swings coupled with offset current (typ), make these amplifiers excellent components resolver excitation designs.
July 1994
Features
This Circuit Processed Accordance MIL-STD883 Fully Conformant Under Provisions Paragraph 1.2.1. Output Voltage Swing ±35V (Min) Supply Voltage ±10V ±40V (Min) Slew Rate 3V/µs (Min) Common Mode Input Voltage Swing ±35V (Min) Offset Current. 12nA (Max) Unity Gain Bandwidth 5MHz (Typ) Output Overload Protection
Applications
Industrial Control Systems Power Supplies High Voltage Regulators Resolver Excitation Signal Conditioning
Ordering Information
PART NUMBER HA2-2640/883 HA4-2640/883 HA7-2640/883 TEMPERATURE RANGE -55oC -55oC +125oC +125oC PACKAGE Lead Ceramic Lead CerDIP
-55oC +125oC
Pinouts
HA-2640/883 (CERDIP) VIEW HA-2640/883 (CLCC) VIEW
COMP
HA-2640/883 (METAL CAN)
COMP
COMP
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1994
Spec Number
3-197
511029-883 File Number 3702
Specifications HA-2640/883
Absolute Maximum Ratings
Voltage Between Terminals 100V Differential Input Voltage Output Current .Full Short Circuit Protection Output Short Circuit Duration Seconds Junction Temperature (TJ) +175oC Storage Temperature Range -65oC +150oC Rating. <2000V Lead Temperature (Soldering 10s) +300oC
Thermal Information
Thermal Resistance CerDIP Package 115oC/W 28oC/W Ceramic Package 65oC/W 15oC/W Metal Package 155oC/W 67oC/W Package Power Dissipation Limit +75oC +175oC CerDIP Package 870mW Ceramic Package 1.54W Metal Package 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package 8.7mW/oC Ceramic Package 15.4mW/oC Metal Package 6.5mW/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Temperature Range -55oC +125oC Operating Supply Voltage ±10V ±40V VINCM
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested VSUPPLY ±40V, RSOURCE 100, RLOAD 500k, VOUT Unless Otherwise Specified. LIMITS PARAMETERS Input Offset Voltage SYMBOL CONDITIONS GROUP SUBGROUPS Input Bias Current 100k, 100, 100k 100k, 100k 15V, -65V -CMR 65V, -15V Large Signal Voltage Gain +AVOL VOUT +30V, VOUT -30V, +20V, +20V, -60V, VOUT -20V -20V, +60V, -20V, VOUT +20V TEMPERATURE +25oC +125oC, -55oC UNITS kV/V kV/V kV/V kV/V
+25oC +125oC, -55oC
+25oC +125oC, -55oC +25oC +125oC, -55oC
Input Offset Current
Common Mode Range
+CMR
+25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC
-AVOL
Common Mode Rejection Ratio
+CMRR
-CMRR
Spec Number 3-198
511029-883
Specifications HA-2640/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested VSUPPLY ±40V, RSOURCE 100, RLOAD 500k, VOUT Unless Otherwise Specified. LIMITS PARAMETERS Output Voltage Swing SYMBOL +VOUT CONDITIONS GROUP SUBGROUPS -VOUT Output Current +IOUT -IOUT Quiescent Power Supply Current +ICC VOUT -10V VOUT +10V VOUT IOUT -ICC VOUT IOUT Power Supply Rejection Ratio +PSRR VSUP 30V, +10V, -40V, +40V, -40V VSUP 30V, +40V, -10V, +40V, -40V Note -VIOAdj Note NOTE: Offset adjustment range [VIO (Measured) ±1mV] minimum referred output. This test functionality only assure adjustment through TEMPERATURE +25oC +125oC, -55oC -3.8 -4.0 VIO-1 VIO-1 VIO+1 VIO+1 UNITS
+25oC +125oC, -55oC
+25oC +25oC +25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
-PSRR
+25oC +125oC, -55oC +25oC +125oC, -55oC
Offset Voltage Adjustment
+VIOAdj
+25oC +125oC, -55oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested VSUPPLY ±40V, RSOURCE RLOAD CLOAD 50pF, AVCL +1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Slew Rate SYMBOL Rise Fall Time Overshoot CONDITIONS VOUT VOUT VOUT +200mV VOUT -200mV VOUT +200mV VOUT -200mV GROUP SUBGROUPS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC UNITS V/µs V/µs
Spec Number 3-199
511029-883
Specifications HA-2640/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized VSUPPLY ±40V, RLOAD CLOAD 10pF, 1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Differential Input Resistance Full Power Bandwidth Minimum Closed Loop Stable Gain Output Short Circuit Current SYMBOL FPBW CONDITIONS VPEAK VPEAK CLSG 50pF VOUT VOUT Open Loop VOUT IOUT NOTES TEMPERATURE +25oC +25oC +25oC -55oC +125oC 13.6 UNITS
+ISC -ISC
+25oC +25oC +25oC -55oC +125oC
Output Resistance Quiescent Power Consumption NOTES:
ROUT
Parameters listed Table controlled design process parameters directly tested final production. These parameters characterized upon initial design release, upon design changes. These parameters guaranteed characterization based upon data from multiple production runs which reflect within variation. Full Power Bandwidth guarantee based Slew Rate measurement using FPBW Slew Rate/(2VPEAK). Power Consumption based upon Quiescent Supply Current test maximum. load outputs.)
TABLE ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group Test Requirements Groups Endpoints NOTE: applies Subgroup only. SUBGROUPS (SEE TABLES (Note
Spec Number 3-200
511029-883
HA-2640/883 Characteristics
DIMENSIONS: mils mils 2360 1720 483µm 25.4µm METALLIZATION: Type: Thickness: GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, Phos.) Silox Thickness: Nitride Thickness: WORST CASE CURRENT DENSITY: A/cm2 12mA SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: PROCESS: HV200 Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2640/883
COMP
Spec Number 3-201
511029-883
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