2N7279D, 2N7279R 2N7279H Radiation Hardened N-Channel Power MOSFE

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2N7279D, 2N7279R 2N7279H Radiation Hardened N-Channel Power MOSFE

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REGISTRATION PENDING Currently Available FRS234
2N7279D, 2N7279R 2N7279H
Radiation Hardened N-Channel Power MOSFETs
Package
TO-257AA
Features
250V, RDS(on) 0.715 Second Generation Hard MOSFET Results From Design Concepts Gamma Meets Pre-Rad Specifications 100KRAD(Si) Defined Point Specs 300KRAD(Si) 1000KRAD(Si) Performance Permits Limited 3000KRAD(Si) Survives 3E9RAD(Si)/sec BVDSS Typically Survives 2E12 Typically Current Limited 4.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications 1E13 Neutrons/cm2 Usable 1E14 Neutrons/cm2 Typically Survives 1E5ions/cm2 Having 35MeV/mg/cm2 Range 30µm BVDSS
Gamma Photo Current Neutron Single Event
Description
Harris Semiconductor Sector designed series SECOND GENERATION hardened power MOSFETs both channel enhancement types with ratings from 100V 500V, 60A, resistance 25m. Total dose hardness offered 100K RAD(Si) 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 500V product 1E14n/cm2 100V product. Dose rate hardness (GAMMA DOT) exists rates without current limiting 2E12 with current limiting. Heavy survival from signal event drain burn-out exists linear energy transfer (LET) rated voltage. This MOSFET enhancement-mode silicon-gate power field effect transistor vertical DMOS (VDMOS) structure. specially designed processed exhibit minimal characteristic changes total dose (GAMMA) neutron (no) exposures. Design processing efforts also directed enhance survival heavy (SEE) and/or dose rate (GAMMA DOT) exposure. This part supplied various packages other than shown above. Reliability screening available either (commercial), equivalent MIL-S-19500, equivalent MIL-S-19500, space equivalent MIL-S19500. Contact Harris Semiconductor High-Reliability Marketing group desired deviations from data sheet.
Symbol
Absolute Maximum Ratings
+25oC) Unless Otherwise Specified 2N7279D, 0.40 +150 UNITS W/oC
Drain-Source Voltage. .VDS Drain-Gate Voltage (RGS 20k) VDGR Continuous Drain Current +25oC +100oC Pulsed Drain Current Gate-Source Voltage .VGS Maximum Power Dissipation +25oC +100oC Derated Above +25oC Inductive Current, Clamped, 100µH, (See Test Figure). Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Operating Storage Temperature. TJC, TSTG Lead Temperature (During Soldering) Distance 0.063 (1.6mm) From Case, Max.
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1993
File Number
3251.1
Specifications 2N7279D, 2N7279R, 2N7279H Registration Pending
Pre-Radiation Electrical Specifications
+25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current SYMBOL BVDSS VGS(th) IGSSF IGSSR IDSS1 IDSS2 IDSS3 VDS(on) RDS(on) td(on) td(off) QG(th) QG(on) Free Operation di/dt 100A/µs 125V, IGS1 IGS2 TEST CONDITIONS VGS, +20V -20V 250V, 200V, 200V, +125oC Time 20µs 10V, 10V, 125V, Pulse Width Period 300µs, (See Test Circuit) 0.025 0.25 3.75 0.715 Turn-Off Delay Time Fall Time Gate-Charge Threshold Gate-Charge State Gate-Charge Total Plateau Voltage Gate-Charge Source Gate-Charge Drain Diode Forward Voltage Reverse Recovery Time Junction-To-Case Junction-To-Ambient
oC/W
UNITS
Rated Avalanche Current Drain-Source On-State Volts Drain-Source Resistance Turn-On Delay Time Rise Time
BVDSS
0.75 BVDSS
0.06
FIGURE SWITCHING TIME TESTING
FIGURE CLAMPED INDUCTIVE SWITCHING
Specifications 2N7279D, 2N7279R, 2N7279H Registration Pending
Post-Radiation Electrical Specifications
+25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts (Note (Note Gate-Source Threshold Volts (Note (Note Gate-Body Leakage Forward (Note (Note Gate-Body Leakage Reverse (Note (Note Zero-Gate Voltage Drain Current (Note (Note Drain-Source On-State Volts (Note (Note Drain-Source Resistance (Note (Note NOTES: Pulse test, 300µs Absolute value Gamma 300KRAD(Si) Gamma 10KRAD(Si) "D", 100KRAD(Si) "R". Neutron 1E13 Gamma 1000KRAD(Si). Neutron 1E13 Insitu Gamma bias must sampled both +10V, BVDSS Gamma data taken 1/19/90 17633 devices ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING PRUSSIA, 19401 Single event drain burnout testing Titus, J.L., NWSC, Crane, Brookhaven Nat. Lab. 11-14, 1989 Neutron derivation, HARRIS Application note AN-8831, Oct. 1988 SYMBOL BVDSS BVDSS VGS(th) VGS(th) IGSSF IGSSF IGSSR IGSSR IDSS IDSS VDS(on) VDS(on) RDS(on) RDS(on) TYPE 2N7279D, 2N7279H 2N7279D, 2N7279H 2N7279D, 2N7279H 2N7279D, 2N7279H 2N7279D, 2N7279H 2N7279D, 2N7279H 2N7279D, 2N7279H TEST CONDITIONS VDS, VDS, 20V, 20V, -20V, -20V, 200V 200V 10V, 16V, 10V, 14V, 3.75 5.63 0.715 1.073 UNITS
2N7279D, 2N7279R, 2N7279H Registration Pending Typical Performance Characteristics
2N7279D, 2N7279R, 2N7279H Registration Pending Packaging
TO-257AA
LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE INCHES SYMBOL 0.190 0.035 0.025 0.060 0.645 0.410 0.200 0.045 0.035 0.090 0.665 0.420 MILLIMETERS 4.83 0.89 0.64 1.53 16.39 10.42 5.08 1.14 0.88 2.28 16.89 10.66 NOTES
0.100 0.200 0.230 0.110 0.600 0.140 0.113 0.250 0.130 0.650 0.035 0.150 0.133
2.54 5.08 5.85 2.80 15.24 3.56 2.88 6.35 3.30 16.51 0.88 3.81 3.37
0.065 TYP.
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-257AA dated 9-88. typically 0.002 inches (0.05mm) solder coating. Lead dimension (without solder). Position lead measured 0.150 inches (3.81mm) from bottom dimension base isolated, terminals case ceramic isolated. Controlling dimension: Inch. Revision dated 1-93.

2N7279D, 2N7279R 2N7279H Radiation Hardened N-Channel Power MOSFE

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