Radiation Hardened Synchronous 4-Bit Up/Down Counter Pinouts
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HCS193MS
Radiation Hardened Synchronous 4-Bit Up/Down Counter
Pinouts
LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH VIEW
September 1995
Features
Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/BitDay (Typ) Dose Rate Survivability: 1012 (Si)/s Dose Rate Upset >1010 (Si)/s 20ns Pulse Latch-Up Free Under Conditions Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels 0.30% 0.70% Input Current Levels VOL,
LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH VIEW
Description
Harris HCS193MS Radiation Hardened 4-bit binary DOWN synchronous counter. Presetting counter number preset data inputs accomplished asynchronous parallel load input (PL). counter incremented high transition clock-up input (high clock-down), decremented high transition clock-down input (high clock-up). high level input overrides other input clear counter zero. Terminal Count goes half clock period before zero count reached returns high maximum count. HCS193MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family.
Ordering Information
PART NUMBER HCS193DMSR HCS193KMSR HCS193D/Sample HCS193K/Sample HCS193HMSR TEMPERATURE RANGE -55oC +125oC -55oC +125oC +25oC +25oC +25oC SCREENING LEVEL Harris Class Equivalent Harris Class Equivalent Sample Sample PACKAGE Lead SBDIP Lead Ceramic Flatpack Lead SBDIP Lead Ceramic Flatpack
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1995
Spec Number File Number
518759 3065.1
HCS193MS Functional Diagram
TRUTH TABLE FUNCTION Count Count Down Reset Load Preset Inputs Transition from high CLOCK CLOCK DOWN RESET PARALLEL LOAD
High Level, Level, Immaterial,
Spec Number
518759
Specifications HCS193MS
Absolute Maximum Ratings
Supply Voltage (VCC). -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±25mA (All Voltage Reference Terminal) Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class
Reliability Information
Thermal Resistance SBDIP Package. 73oC/W 24oC/W Ceramic Flatpack Package 114oC/W 29oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.68W Ceramic Flatpack Package 0.44W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.7mW/oC Ceramic Flatpack Package 8.8mW/oC
CAUTION: with semiconductors, stress listed under "Absolute Maximum Ratings" applied devices (one time) without resulting permanent damage. This stress rating only. Exposure absolute maximum rating conditions extended periods affect device reliability. conditions listed under "Electrical Performance Characteristics" only conditions recommended satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). +4.5V +5.5V Input Rise Fall Times 4.5V (TR, 100ns Max. Operating Temperature Range (TA) -55oC +125oC Input Voltage (VIL). 0.0V Input High Voltage (VIH)
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Sink) 4.5V, 4.5V, VOUT 0.4V, Output Current (Source) 4.5V, 4.5V, VOUT -0.4V, 4.5V, 3.15V, 50µA, 1.35V 5.5V, 3.85V, 50µA, 1.65V Output Voltage High 4.5V, 3.15V, -50µA, 1.35V 5.5V, 3.85V, -50µA, 1.65V Input Leakage Current 5.5V, LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -4.8 -4.0 UNITS
PARAMETER Quiescent Current
SYMBOL
(NOTE CONDITIONS 5.5V,
Output Voltage
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
-0.1 -0.1
+25oC, +125oC, -55oC
+25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0
Noise Immunity Functional Test
4.5V, 0.70(VCC), 0.30(VCC), (Note
NOTES: voltages reference device GND. functional tests 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518759
Specifications HCS193MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TPHL 4.5V TPLH, TPHL TPLH, TPHL TPLH 4.5V 4.5V 4.5V TPHL 4.5V TPLH 4.5V TPHL 4.5V TPHL, TPLH 4.5V LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER
SYMBOL TPLH
(NOTES CONDITIONS 4.5V
NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE CONDITIONS 5.0V, 1MHz LIMITS TEMPERATURE +25oC +125oC, Input Capacitance 5.0V, 1MHz -55oC UNITS
PARAMETER Capacitance Power Dissipation
SYMBOL
+25oC +125oC, -55oC
Output Transition Time
TTHL TTLH FMAX
4.5V
+25oC +125oC, -55oC
Maximum Operating Frequency (CPU, CPD) Setup Time
4.5V
+25oC +125oC, -55oC
4.5V
+25oC +125oC, -55oC
Hold Time
4.5V
+25oC +125oC, -55oC
Hold Time
4.5V
+25oC +125oC, -55oC
Spec Number
518759
Specifications HCS193MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) (NOTE CONDITIONS 4.5V LIMITS TEMPERATURE +125oC Pulse Width 4.5V +125oC Pulse Width 4.5V +25o
PARAMETER Pulse Width
SYMBOL
UNITS
+125 Recovery Time CPU, TREC 4.5V +25oC +125o Recovery Time CPU, TREC 4.5V
+25oC +125o
NOTE: parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics. TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS TEMPERATURE
PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Output Voltage High Input Leakage Current Noise Immunity Functional Test
SYMBOL TPLH TPHL
(NOTES CONDITIONS 5.5V, 4.5V, GND, VOUT 0.4V 4.5V, GND, VOUT -0.4V 4.5V 5.5V, 0.70(VCC), 0.30(VCC), 50µA 4.5V 5.5V, 0.70(VCC), 0.30(VCC), -50µA 5.5V, 4.5V, 0.70(VCC), 0.30(VCC), (Note 4.5V 4.5V 4.5V 4.5V 4.5V 4.5V 4.5V 4.5V 4.5V
-4.0 -0.1
0.75
UNITS
+25oC +25oC +25oC +25oC
+25oC
TPLH TPHL
TPHL, TPLH TPHL, TPLH TPLH TPHL
+25oC +25oC +25oC +25oC +25oC
TPHL
NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. functional tests 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518759
Specifications HCS193MS
TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH
DELTA LIMIT 12µA -15% Hour
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups (Note ICC, IOL/H READ RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
NOTES: Alternate Group testing accordance with method 5005 MIL-STD-883 exercised. Table parameters only. TABLE TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group Subgroup TEST METHOD 5005 POST Table READ RECORD POST Table (Note
NOTE: Except test which will performed 100% Go/No-Go. TABLE DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 0.5V 0.5V 50kHz 25kHz
STATIC BURN-IN TEST CONNECTIONS (Note
STATIC BURN-IN TEST CONNECTIONS (Note
DYNAMIC BURN-IN TEST CONNECTIONS (Note
NOTES: Each except will have resistor static burn-in. Each except will have resistor dynamic burn-in. TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures.
Spec Number
518759
HCS193MS Harris Space Level Product Flow `MS'
Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note
NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Harris Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Harris Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Harris. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative.
Spec Number
518759
HCS193MS Timing Diagrams
I/FMAX INPUT LEVEL INPUT LEVEL TPHL TPLH TPHL TPLH
FIGURE CLOCK OUTPUT DELAYS CLOCK PULSE WIDTH
FIGURE CLOCK TERMINAL COUNT DELAYS
TPLH
INPUT LEVEL INPUT LEVEL TREC TPHL INPUT LEVEL TPHL TREC INPUT LEVEL
INPUT LEVEL
FIGURE PARALLEL LOAD PULSE WIDTH, PARALLEL LOAD OUTPUT DELAYS, PARALLEL LOAD CLOCK RECOVERY TIME
FIGURE MASTER RESET PULSE WIDTH, MASTER RESET OUTPUT DELAY MASTER RESET CLOCK RECOVERY TIME
TSU(H)
TSU(L)
INPUT LEVEL
INPUT LEVEL
TTLH
TTHL
OUTPUT
FIGURE SETUP HOLD TIMES DATA PARALLEL LOAD (PL)
FIGURE OUTPUT TRANSITION TIME
Timing Diagrams
VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
Load Circuit
TEST POINT
50pF
Spec Number
518759
HCS193MS Characteristics
DIMENSIONS: mils 2642µm 2185µm METALLIZATION: Type: AlSi Metal Thickness: GLASSIVATION: Type: SiO2 Thickness: WORST CASE CURRENT DENSITY: 105A/cm2 BOND SIZE: 100µm 100µm mils mils
Metallization Mask Layout
HCS193MS
(16)
(15) Q0(3)
(14) CPD(4)
(13)
CPU(5)
(12) Q2(6)
(11)
Q3(7)
(10)
Spec Number
518759
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