Radiation Hardened Triple 3-Input Gate Pinouts LEAD CERAMIC

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Radiation Hardened Triple 3-Input Gate Pinouts LEAD CERAMIC

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HCS27MS
Radiation Hardened Triple 3-Input Gate
Pinouts
LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14, LEAD FINISH VIEW
September 1995
Features
Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/Bit-Day (Typ) Dose Rate Survivability: 1012 (Si)/s Dose Rate Upset >1010 (Si)/s 20ns Pulse Latch-Up Free Under Conditions Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL,
LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH VIEW
Description
Harris HCS27MS Radiation Hardened Triple 3-Input Gate. inputs forces output High state. HCS27MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS27MS supplied lead Ceramic flatpack suffix) SBDIP Package suffix).
Functional Diagram
(13, (12,
Ordering Information
PART NUMBER HCS27DMSR TEMPERATURE RANGE -55oC +125oC SCREENING LEVEL Harris Class Equivalent Harris Class Equivalent Sample PACKAGE
TRUTH TABLE Lead SBDIP HCS27KMSR -55oC +125oC Lead Ceramic Flatpack Lead SBDIP HCS27D/ Sample HCS27K/ Sample HCS27HMSR +25oC +25oC Sample Lead Ceramic Flatpack +25oC INPUTS OUTPUTS
NOTE: Logic Level Low, Logic level High
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1995
Spec Number File Number
518766 3054.1
Specifications HCS27MS
Absolute Maximum Ratings
Supply Voltage -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±25mA (All Voltage Reference Terminal) Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class
Reliability Information
Thermal Resistance SBDIP Package. 74oC/W 24oC/W Ceramic Flatpack Package 116oC/W 30oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.68W Ceramic Flatpack Package 0.43W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.5mW/oC Ceramic Flatpack Package 8.6mW/oC
CAUTION: with semiconductors, stress listed under "Absolute Maximum Ratings" applied devices (one time) without resulting permanent damage. This stress rating only. Exposure absolute maximum rating conditions extended periods affect device reliability. conditions listed under "Electrical Performance Characteristics" only conditions recommended satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). +4.5V +5.5V Input Rise Fall Times 4.5V (tr, 100ns/V Max. Operating Temperature Range (TA) -55oC +125oC Input Voltage (VIL). 0.0V Input High Voltage (VIH)
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Sink) 4.5V, 4.5V, VOUT 0.4V, Output Current (Source) 4.5V, 4.5V, VOUT -0.4V, 4.5V, 3.15V, 50µA, 1.35V 5.5V, 3.85V, 50µA, 1.65V Output Voltage High 4.5V, 3.15V, -50µA, 1.35V 5.5V, 3.85V, -50µA, 1.65V Input Leakage Current 5.5V, LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -4.8 -4.0 UNITS
PARAMETER Quiescent Current
SYMBOL
(NOTE CONDITIONS 5.5V,
Output Voltage
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
-0.1 -0.1
+25oC, +125oC, -55oC
+25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0
Noise Immunity Functional Test
4.5V, 0.70(VCC), 0.30(VCC), (Note
NOTES: voltages reference device GND. functional tests 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518766
Specifications HCS27MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Input TPLH 4.5V NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER Input
SYMBOL TPHL
(NOTES CONDITIONS 4.5V
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CONDITIONS 5.0V, 1MHz NOTES Input Capacitance 5.0V, 1MHz Output Transition Time TTHL TTLH 4.5V NOTE: parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL (NOTES CONDITIONS 5.5V, 4.5V, GND, VOUT 0.4V 4.5V, GND, VOUT -0.4V 4.5V 5.5V, 0.70(VCC), 0.30(VCC), 50µA 4.5V 5.5V, 0.70(VCC), 0.30(VCC), -50µA 5.5V, TEMPERATURE +25oC +25oC UNITS
Output Current (Source) Output Voltage
+25oC
-4.0
+25oC
Output Voltage High
+25oC
-0.1
Input Leakage Current
+25oC
Spec Number
518766
Specifications HCS27MS
TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K LIMITS PARAMETER Noise Immunity Functional Test Input SYMBOL (NOTES CONDITIONS 4.5V, 0.70(VCC), 0.30(VCC), (Note 4.5V 4.5V TEMPERATURE +25oC UNITS
TPHL TPLH
+25oC +25oC
NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. functional tests 4.0V recognized logic "1", 0.5V recognized logic "0".
TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH
DELTA LIMIT -15% Hour
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups (Note ICC, IOL/H READ RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
Subgroup Group NOTES:
Sample/5005 Sample/5005
Alternate Group inspection accordance with Method 5005 MIL-STD-883 exercised. Table parameters only.
Spec Number
518766
Specifications HCS27MS
TABLE TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% Go/No-Go. METHOD 5005 POST Table READ RECORD POST Table (Note
TABLE STATIC DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 0.5V 0.5V 50kHz 25kHz
STATIC BURN-IN TEST CONDITIONS (Note
STATIC BURN-IN TEST CONNECTIONS (Note
DYNAMIC BURN-IN TEST CONNECTIONS (Note NOTES: Each except will have resistor static burn-in. Each except will have resistor dynamic burn-in.
TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures.
Spec Number
518766
HCS27MS Harris Space Level Product Flow `MS'
Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note
NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Harris Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Harris Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Harris. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative.
Spec Number
518766
HCS27MS Timing Diagrams
TPLH TPHL TTLH TTHL OUTPUT 50pF INPUT
Load Circuit
TEST POINT
OUTPUT
VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
Spec Number
518766
HCS27MS Characteristics
DIMENSIONS: mils 2.20 2.24mm METALLIZATION: Type: SiAl Metal Thickness: GLASSIVATION: Type: SiO2 Thickness: WORST CASE CURRENT DENSITY: <2.0 105A/cm2 BOND SIZE: 100µm 100µm mils mils
Metallization Mask Layout
HCS27MS
(14) (13)
(12)
(11)
(10)
Spec Number
518766

Radiation Hardened Triple 3-Input Gate Pinouts LEAD CERAMIC

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