Radiation Hardened Channel CMOS Analog Multiplexer with Overvoltage Pr

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Radiation Hardened Channel CMOS Analog Multiplexer with Overvoltage Pr

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HS-508ARH/883S
Radiation Hardened Channel CMOS Analog Multiplexer with Overvoltage Protection
Pinouts
HS1-508ARH/883S SIDEBRAZE CASE OUTLINE D-2, COMPLIANT MIL-M-38510 PACKAGE VIEW
December 1992
Features
This Circuit Processed Accordance MIL-STD883 Fully Conformant Under Provisions Paragraph 1.2.1. Radiation Environment Gamma Rate RAD(Si)/s Gamma Dose RAD(Si) Analog/Digital Overvoltage Protection Fail Safe with Power Loss Latchup) Break-Before-Make Switching DTL/TTL CMOS Compatible Analog Signal Range ±15V Fast Access Time Supply Current 1MHz Address Toggle (Typ.) Standby Power (Typ.) 7.5mW Dielectrically Isolated Device Islands
-VSUP
+VSUP
HS9-508ARH/883S FLATPACK CASE OUTLINE F-5A, COMPLIANT MIL-M 38510 PACKAGE VIEW
-VSUP +VSUP
Description
HS-508ARH/883S dielectrically isolated, radiation hardened, CMOS analog multiplexer incorporating important feature; withstands analog input voltages much greater than supplies. This essential system where analog inputs originate outside equipment. They withstand continuous input greater than either supply, which eliminates possibility damage when supplies off, input signals present. Equally important, withstand brief input transient spikes several hundred volts; which otherwise would require complex external protection networks. Necessarily, resistance somewhat higher than similar unprotected devices, very leakage current combine produce errors. Reference Application Notes 521, available from Semiconductor Products Division Harris, further information HS-508ARH/883S multiplexer general. HS-508ARH/883S been specifically designed meet exposure radiation environments. Operation from -55oC +125oC guaranteed.
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1992
File Number
3021
3-425
HS-508ARH/883S Functional Diagram
DIGITAL ADDRESS
ADDRESS INPUT BUFFER LEVEL SHIFTER
DECODERS
MULTIPLEX SWITCHES
Truth Table
``ON'' CHANNEL NONE
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Specifications HS-508ARH/883S
Absolute Information
Supply Voltage Between Pins +40V +VSUPPLY Ground +20V -VSUPPLY Ground .-20V Analog input Overvoltage: +VSUPPLY +20V -VSUPPLY -20V Digital Input Overvoltage: +VEN, +VSUPPLY -VEN, -VSUPPLY Peak Current, Pulsed 1ms, Duty Cycle Maximum 40mA Storage Temperature Range -65oC +150oC Junction Temperature +175oC Lead Temperature (Soldering 10s) +275oC
Reliability Information
Thermal Resistance Sidebraze Package 74.7oC/W 12.1oC/W Flatpack Package 85.0oC/W 11.1oC/W Total Power Dissipation. 725mW Gate Count Gates Classification. Class
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Supply Voltage (±VSUPPLY) ±15V Operating Temperature Range -55oC +125oC Logic Level (VAL) +0.8V Logic High Level (VAH) +4.0V
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed 100% Tested Unless Otherwise Specified: -15V, +15V, +4.0V, 0.8V GROUP SUBGROUPS LIMITS TEMPERATURE +25oC, +125oC, -55oC +25oC +125oC, -55oC -250 -250 -2000 2000 -1000 1000 UNITS
PARAMETERS Input Leakage Current, Address, Enable Pins Leakage Current into Source Terminal ``OFF'' Switch
SYMBOL +IS(OFF)
CONDITIONS Measure Inputs Sequentially Ground Unused Pins +10V, Unused Inputs Output -10V, 0.8V -10V, Unused Inputs Output +10V, =0.8V +10V, 0.8V. Unused Inputs -10V -10V, 0.8V. Unused Inputs +10V =+25V, Measure 0.8V, Unused Inputs -25V, Measure 0.8V, Unused Inputs +10V, 4.0V. Unused Inputs -10V -10V, 4.0V. Unused Inputs +10V
-IS(OFF)
+25oC +125oC, -55oC
Leakage Current into Drain Terminal ``OFF'' Switch
+ID(OFF)
+25oC +125oC, -55oC
-ID(OFF)
+25oC +125oC, +25oC, -55oC
Leakage Current Into Drain Terminal ``OFF'' Switch With Overvoltage Applied
+ID(OFF) Overvoltage -ID(OFF) Overvoltage +ID(On)
+125oC,
-55oC +25oC, +125oC, -55oC +25oC +125oC, -55oC -2000 2000
Leakage Current from ``ON'' Driver into Switch (Drain Source)
-250 -250
-ID(On)
+25oC +125oC, -55oC
Analog Signal Range
+25oC, +125oC, -55oC
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Specifications HS-508ARH/883S
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed 100% Tested (Continued)
Unless Otherwise Specified: -15V, +15V, +4.0V, 0.8V GROUP SUBGROUPS LIMITS TEMPERATURE +25oC -55oC, +125oC 1500 1800 1500 1800 UNITS ohms ohms ohms ohms
PARAMETERS Switch Resistance
SYMBOL +R(On)
CONDITIONS +10V, IOUT -100µA, 4.0V -10V, IOUT +100µA, 4.0V 4.0V 4.0V 0.8V 0.8V
-R(On)
+25oC -55oC, -55oC, +125oC +25oC,
Positive Supply Current Negative Supply Current Positive Standby Supply Current Negative Standby Supply Current
I(+) I(-) +I(SBY) -I(SBY)
+125oC -55oC, +25oC, +125oC -55oC, +25oC,+125oC -55oC, +25oC, +125oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed 100% Tested. Unless Otherwise Specified: 15V, +15V, +4.0V, 0.8V GROUP SUBGROUPS TOn(A) TOff(A) TOn(EN) TOff(EN) 1000, 50pF 10K, 50pF LIMITS TEMPERATURE +25oC -55oC, +125oC +25oC -55oC, +125oC +25oC -55oC, +125oC 1000 1000 UNITS
PARAMETERS Break-Before-Make Time Delay Propogation Delay Times: Address Inputs Channels Enable
SYMBOL
CONDITIONS 1000, 50pF
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized 15V, +15V, +4.0V, 0.8V Unless Otherwise Specified LIMITS PARAMETERS Capacitance Address Input Capacitance Channel Input Capacitance Channel Output Isolation SYMBOL CS(Off) CD(Off) VISO CONDITIONS 1MHz 1MHz 1MHz 0.8V, 200KHz, 7pF, 3.0VRMS NOTE TEMPERATURE +25oC +25oC +25oC +25oC UNITS
NOTES: parameters listed this table controlled design process parameters directly tested. These parameters characterized upon initial design changes which would affect these characteristics. Worst case isolation occurs channel proximity output pins.
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Specifications HS-508ARH/883S
TABLE POST 100K (si) ELECTRICAL SPECIFICATIONS Tested, MIL-STD 883. Unless Otherwise Specified: -15V, +15V, +4.5V, VAL= 0.5V GROUP SUBGROUPS LIMITS TEMPERATURE +25oC -1000 1000 UNITS
PARAMETERS Input Leakage Current, Address,or Enable Pins Leakage Current Into Source Terminal ``OFF'' Switch
SYMBOL +IS(OFF)
CONDITIONS Measure Inputs Sequentially, Ground Unused Pins +10V, Unused Inputs Output -10V, 0.8V -10V, Unused Inputs Output +10V, =0.8V +10V, 0.8V. Unused Inputs -10V -10V, 0.8V. Unused Inputs +10V =+25V, Measure 0.8V, Unused Inputs tied -25V, Measure 0.8V, Unused Inputs tied +10V, 4.0V. Unused Inputs -10V -10V, 4.0V. Unused Inputs +10V +10V, IOUT -100µA, 4.0V -10V, IOUT +100µA, 4.0V 4.0V 4.0V 0.8V 0.8V 1000, 50pF 10K, 50pF
+25oC
-IS(OFF)
+25oC
Leakage Current Into Drain Terminal ``OFF'' Switch
+ID(OFF) -ID(OFF) +ID(OFF) Overvoltage -ID(OFF) Overvoltage +ID(On)
+25oC +25oC +25oC
-250 -250 -2000
2000
Leakage Current Into Drain Terminal ``OFF'' Switch With Overvoltage Applied
+25oC
-2000
2000
Leakage Current from ``ON'' Driver into Switch (Drain Source)
+25oC
-250
-ID(On)
+25oC
-250
Switch Resistance
+R(On)
+25oC
1500
-R(On) Positive Supply Current Negative Supply Current Positive Standby Supply Current Negative Standby Supply Current Break-Before-Make Time Delay Propogation Delay Times: Address Inputs Channels Enable I(+) I(-) +ISBY -ISBY TOn(A) TOff(A) TOn(EN) TOff(EN)
+25oC +25oC +25oC +25oC +25oC +25oC +25oC -55oC, +125oC
1500 3000 3000 3000 3000
1000, 50pF
+25oC -55oC, +125oC
3-429
Specifications HS-508ARH/883S
TABLE POST BURN-IN DELTA ELECTRICAL SPECIFICATIONS Guaranteed, MIL-STD 883. Unless Otherwise Specified: -15V, +15V, +4.0V, 0.8V GROUP SUBGROUPS LIMITS TEMPERATURE +25oC -100 UNITS
PARAMETERS Input Leakage Current, Address,or Enable Pins Leakage Current into Source Terminal ``OFF'' Switch
SYMBOL +IS(OFF)
CONDITIONS Measure Inputs Sequentially,Ground Unused Pins +10V, Unused Inputs Output -10V, 0.8V -10V, Unused Inputs Output +10V, =0.8V +10V, 0.8V, Unused Inputs -10V -10V, 0.8V. Unused Inputs +10V +10V, 4.0V. Unused Inputs -10V -10V, 4.0V Unused Inputs +10V +10V, IOUT -100µA, 4.0V -10V, IOUT +100µA, 4.0V 4.0V 4.0V 0.8V 0.8V
+25oC
-IS(OFF)
+25oC
Leakage Current into Drain Terminal ``OFF'' Switch
+ID(OFF) -ID(OFF) +ID(On)
+25oC +25oC +25oC
Leakage Current from ``ON'' Driver into Switch (Drain Source)
-ID(On)
+25oC
Switch Resistance
+R(On)
+25oC
-150
-150
-R(On) Positive Supply Current Negative Supply Current Positive Standby Supply Current NegativeStandby Supply Current I(+) I(-) +I(SBY) -I(SBY)
+25oC +25oC +25oC +25oC +25oC
-150 -200 -100 -200 -100
-150
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test Interim Test Final Test Group Group Others Group Group Subgroup METHOD 100%/5004 100%/5004 100%/5004 100%/5004 Samples/5005 Samples/5005 Samples/5005 Samples/5005 Samples/5005 SUBGROUPS
3-430
HS-508ARH/883S Switching Waveforms
ACCESS TIME
1/2VAH ADDRESS DRIVE (VA) 0.8V INPUT 2V/DIV.
+10V
OUTPUT -10V OUTPUT 5V/DIV.
200ns/DIV.
BREAK-BEFORE-MAKE DELAY (tOPEN)
ADDRESS DRIVE (VA) OUTPUT +4.0V OUTPUT 5V/DIV. tOPEN 100ns/DIV. THRU INPUT 2V/DIV. VOUT 50pF
0.8V
ENABLE DELAY (tON(EN), tOFF(EN))
0.8V OUTPUT tON(EN) tOFF (EN) THRU 50pF OUTPUT 4V/DIV. +10V ENABLE DRIVE 2V/DIV.
100ns/DIV.
3-431
HS-508ARH/883S Burn-In Circuits
-15.5V 0.5V +15.5V 0.5V -15.5V 0.5V +5.5V 0.5V
D.U.T.
+15.5V 0.5V
DYNAMIC BURN-IN LIFE TEST CIRCUIT NOTES: ohms ±5%, watt (per socket) 0.01µF minimum (per socket) 0.1µF minimum (per row) 1N4002 equivalent) 100KHz; f0/2; f0/4; f0/8; Duty Cycle 0.8V max; 4.0V min. NOTES:
STATIC BURN-IN TEST CIRCUIT ohms ±5%, watt (per socket) 0.01µF minimum (per socket) 0.1µF minimum (per row) 1N4002 equivalent)
Irradiation Circuit
-15V +15V
NOTE: irradiation testing performed sidebrazed package
3-432
HS-508ARH/883S Schematic Diagrams
ADDRESS INPUT BUFFER LEVEL SHIFTER
LEVEL SHIFTER LEVEL SHIFTED ADDRESS DECODE LEVEL SHIFTED ADDRESS DECODE REFERENCE CIRCUIT
OVERVOLTAGE PROTECTION
ADDRESS DECODER
FROM DECODE
MULTIPLEX SWITCH
OVERVOLTAGE
PROTECTION
ENABLE CHANNEL DEVICE SWITCH PAIR CHANNEL DEVICE SWITCH PAIR FROM DECODE
3-433
HS-508ARH/883S Harris Space Level Product Flow
Traceable Diffusion Method 2018 Wafer Acceptance Method 5007 Internal Visual Inspection (Note Gamma Radiation Assurance Tests Method 1019 100% Nondestructive Bond Pull Method 2023 Customer Pre-Cap Visual Inspection (Notes Temperature Cycling Method 1010 Condition Constant Acceleration method 2001 30KG Particle Impact Noise Detection method 2020, Condition Marking Serialization X-Ray Inspection Method 2012 Initial Electrical Tests (T0) Static Burn-In Hour, +125oC method 1015 Condition Room Temperature Electrical Tests (T1) Burn-In Delta Calculation (T0-T1) Calculation Functional Subgroups Dynamic Burn-In Hours, +125oC Method 1015 Condition Electrical Tests Subgroups (T2) Burn-In Delta Calculation Calculation Functional Subgroups Electrical Test +125oC, -55oC Alternate Group Inspection Method 5005 Fine Gross Leak Tests Method 1014 Customer Source Inspection (Note Group Inspection (Notes Method 5005 Group Inspection (Notes Method 5005 External Visual Inspection Method 2009 Data Package Generation (Note
NOTES: Visual Inspection performed MIL-STD-883 Method 2010, Condition These steps optional, should listed purchase order required. Data package contains: Assembly Attributes (post seal) Test Attributes (includes Group -55oC, +25oC, +125oC Shippable Serial Number List Radiation Testing Certificate Conformance Wafer Acceptance Report (includes report) X-Ray Report Film Test Variables Data, Test TELQV +25oC Initial Test +25oC Interim Test +25oC Interim Test +25oC Delta Over Burn-In Group data package contains Attributes Data pulse Variables Data, Test TE2HQV. Group data package contains Attributes only.
3-434
HS-508ARH/883S Metallization Topology
DIMENSIONS: x108 mils METALLIZATION: Type: Aluminum Thickness: GLASSIVATION: Type: SiO2 Thickness: ATTACH: Material: Gold Eutectic Temperature: Side Braze 335oC (Max) Flatpack 460oC (Max) WORST CASE CURRENT DENSITY: 6.68e04 Amps/cm2 PROCESS: CMOS-DI
Metallization Mask Layout
HS-508ARH/883S
3-435

Radiation Hardened Channel CMOS Analog Multiplexer with Overvoltage Pr

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