High Speed Precision Sample Hold Amplifier HA-5320/883 designed p
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HA-5320/883
High Speed Precision Sample Hold Amplifier
HA-5320/883 designed precision, high speed data acquisition systems. circuit consists input transconductance amplifier capable providing large amounts charging current, leakage analog switch, output integrating amplifier. analog switch sees virtual ground load; therefore, charge injection hold capacitor constant over entire input/ output voltage range. pedestal voltage resulting from this charge injection adjusted zero offset adjust inputs. device includes hold capacitor. However, improved droop rate required expense acquisition time, additional hold capacitance added externally. This monolithic device manufactured using Harris Dielectric Isolation Process, minimizing stray capacitance eliminating SCR's. This allows higher speed latch-free operation. further information, please Application Note AN538.
July 1994
Features
This Circuit Processed Accordance MIL-STD883 Fully Conformant Under Provisions Paragraph 1.2.1. Gain, (Typ) Acquisition Time 1.0µs (0.01%) (Typ) Droop Rate 0.08µV/µs (+25oC) (Typ) 17µV/µs (Full Temperature) (Typ) Aperture Time. 25ns (Typ) Hold Step Error 1.0mV (Typ) Internal Hold Capacitor Fully Differential Input Compatible
Applications
High Bandwidth Precision Data Acquisition Systems Inertial Navigation Guidance Systems Ultrasonics SONAR RADAR Digital Analog Converter Deglitcher
Pinouts
HA-5320/883 (CERDIP) VIEW
-INPUT +INPUT OFFSET OFFSET OUTPUT CONTROL SUPPLY CEXT INT.
Ordering Information
PART NUMBER HA1-5320/883 HA4-5320/883 TEMPERATURE RANGE -55oC +125oC -55oC +125oC PACKAGE Lead CerDIP Lead Ceramic
Functional Diagram
OFFSET ADJUST
HA-5320/883 (CLCC) VIEW
CNTL SUPPLY -INPUT +INPUT
HA-5320/883
100pF
OFFSET OFFSET
OUTPUT
CEXT SUPPLY CEXT INTEGRATOR BANDWIDTH CONTROL
OUTPUT INT.
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1994
Spec Number 511096-883 File Number 2927.3
Specifications HA-5320/883
Absolute Maximum Ratings
Voltage Between Terminals Differential Input Voltage Digital Input Voltage (S/H Pin) .+8V, -15V Output Current, Continuous (Note .±20mA Storage Temperature Range -65oC +150oC Junction Temperature +175oC Lead Temperature (Soldering 10s) +300oC Classification <2000V
Thermal Information
Thermal Resistance CerDIP Package 66oC/W 16oC/W Ceramic Package 57oC/W 9oC/W Package Power Dissipation +75oC CerDip Package 1.5W Ceramic Package 1.75W Package Power Dissipation Derating Factor Above +75oC CerDip Package 15mW/oC Ceramic Package 17mW/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Temperature Range -55oC +125oC Operating Supply Voltage (±VS) ±15V Analog Input Voltage ±10V Logic Level (VIL) 0.8V Logic Level High (VIH) 2.0V 5.0V
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested +15V; -15V; 0.8V (Sample); 2.0V (Hold); Internal 100pF; Signal Supply GND, Unless Otherwise Specified LIMITS PARAMETERS Input Offset Voltage SYMBOL CONDITIONS GROUP SUBGROUP Input Bias Current Input Offset Current Open Loop Voltage Gain +AVS VOUT +10V -AVS VOUT -10V Common Mode Rejection Ratio +CMRR 10V, -20V, VOUT -5V, VS/H -4.2V, VGND 20V, -10V, VOUT +5V, VS/H 5.8V, VGND VOUT +10V VOUT -10V TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC -200 -200 -200 -200 -100 -100 +200 +200 +200 +200 +100 +100 UNITS
-CMRR
Output Current
CAUTION: These devices sensitive electronic discharge. Proper handling procedures should followed.
Spec Number
511096-883
Specifications HA-5320/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested +15V; -15V; 0.8V (Sample); 2.0V (Hold); Internal 100pF; Signal Supply GND, Unless Otherwise Specified LIMITS PARAMETERS Output Voltage Swing SYMBOL +VOP CONDITIONS GROUP SUBGROUP -VOP Power Supply Current +ICC VOUT IOUT -ICC VOUT IOUT Power Supply Rejection Ratio +PSRR 14.5V, 15.5V -15V, -15V +15V, +15V, -14.5V, -15.5V -PSRR Digital Input Current IINL IINH Digital Input Voltage Output Voltage Droop Rate NOTE: Internal power dissipation limit output current below 20mA. VOUT TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +125oC UNITS µV/µs
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS Table Intentionally Left Blank. Specifications Table
CAUTION: These devices sensitive electronic discharge. Proper handling procedures should followed.
Spec Number
511096-883
Specifications HA-5320/883
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Hold Mode Feedthrough Hold Step Error SYMBOL VHMF VERROR CONDITIONS 10VP-P 100kHz 3.5V, TRISE (VIL VIH) 10ns NOTES TEMPERATURE +25oC +25oC UNITS
Sample Mode Noise Voltage Hold Mode Noise Voltage Input Capacitance Input Resistance Slew Rate
EN(SAMPLE) 10MHz, VS/H RLOAD EN(HOLD) 10MHz, VS/H RLOAD VS/H VS/H Delta 50pF, VOUT Step 10%, 50pF, VOUT Step 10%, 50pF, VOUT +200mV Step 10%, 50pF, VOUT -200mV Step 10%, 50pF, VOUT +200mV Step 50pF, VOUT -200mV Step 50pF, VOUT Step
+25oC
µVRMS µVRMS
+25oC
+25oC +25oC +25oC
V/µs
+25oC
V/µs
Rise Fall Times
+25oC
+25oC
Overshoot
+25oC
+25oC
0.1% Acquisition Time
TACQ 0.1%
+25oC
NOTE: parameters listed this table controlled design process parameters directly tested. These parameters characterized upon initial design release upon design changes which would affect these characteristics.
TABLE ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group Test Requirements Groups Endpoints NOTE: applies Subgroup only. other subgroups included PDA. SUBGROUPS (SEE TABLE 1(Note
Spec Number
511096-883
HA-5320/883 Characteristics
DIMENSIONS: 1mils METALLIZATION: Type: Thickness: GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, Phos) Silox Thickness: Nitride Thickness: WORST CASE CURRENT DENSITY: 1.742 A/cm2 TRANSISTOR COUNT: SUBSTRATE POTENTIAL:
Metallization Mask Layout
HA-5320/883
SUPPLY (13)
CEXT (11)
CTRL (14) -INPUT
OUTPUT
+INPUT
Spec Number
511096-883
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