Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register

Datasheet Thumbnail

Top Searches for this datasheet

HCS166MS
Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register
Pinouts
LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH VIEW
September 1995
Features
Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: 1012 (Si)/s Dose Rate Upset >1010 s(Si)/s 20ns Pulse Latch-Up Free Under Conditions Fanout (Over Temperature Range) Standard Outputs LSTTL Loads Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL,
LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH VIEW
Description
Harris HCS166MS 8-bit shift register that fully synchronous serial parallel data entry selected active Parallel Enable (PE) input. When setup time before LOW-to-HIGH clock transition, parallel data entered into register. When HIGH, data entered into internal position from Serial Data Input (DS), remaining bits shifted place right etc.) with each positive-going clock transition. expansion register parallel serial converters, output connected input succeeding stage. clock input gated structure which allows input used active Clock Enable (CE) input. assignment inputs arbitrary reversed layout convenience. LOW-to-HIGH transition input should only take place while HIGH predictable operation. Master Reset (MR) input overrides other inputs clears register asynchronously, forcing positions state. HCS166MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS166MS supplied lead Ceramic flatpack suffix) SBDIP Package suffix).
Ordering Information
PART NUMBER HCS166DMSR TEMPERATURE RANGE SCREENING LEVEL PACKAGE Lead SBDIP Lead Ceramic Flatpack Lead SBDIP Lead Ceramic Flatpack
-55oC +125oC Harris Class Equivalent -55oC +125oC Harris Class Equivalent
HCS166KMSR
HCS166D/ Sample HCS166K/ Sample
+25oC
Sample
+25oC
Sample
HCS166HMSR
+25oC
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1995
Spec Number File Number
518758 2482.2
HCS166MS Functional Diagram
TRUTH TABLE INPUTS PARALLEL MASTER RESET PARALLEL ENABLE CLOCK ENABLE CLOCK SERIAL INTERNAL STATES OUTPUT
High Level Level Immaterial Transition from high level
level steady state input inputs thru respectively. Q00, Q10, level respectively, before indicated steady state input conditions were established. Q0n, level respectively, before most recent transition clock.
Spec Number
518758
Specifications HCS166MS
Absolute Maximum Ratings
Supply Voltage -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±25mA (All Voltage Reference Terminal) Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class
Reliability Information
Thermal Resistance SBDIP Package. 73oC/W 24oC/W Ceramic Flatpack Package 114oC/W 29oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.68W Ceramic Flatpack Package 0.44W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.7mW/oC Ceramic Flatpack Package 8.8mW/oC
CAUTION: with semiconductors, stress listed under "Absolute Maximum Ratings" applied devices (one time) without resulting permanent damage. This stress rating only. Exposure absolute maximum rating conditions extended periods affect device reliability. conditions listed under "Electrical Performance Characteristics" only conditions recommended satisfactory device operation.
Operating Conditions
Supply Voltage +4.5V +5.5V Input Rise Fall Times 4.5V (TR, .500ns Operating Temperature Range (TA) -55oC +125oC Input Voltage (VIL). 0.0V Input High Voltage (VIH)
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Sink) 4.5V, 4.5V, VOUT 0.4V, Output Current (Source) 4.5V, 4.5V, VOUT -0.4V, 4.5V, 3.15V, 50µA, 1.35V 5.5V, 3.85V, 50µA, 1.65V Output Voltage High 4.5V, 3.15V, -50µA, 1.35V 5.5V, 3.85V, -50µA, 1.65V Input Leakage Current 5.5V, LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -4.8 -4.0 UNITS
PARAMETER Quiescent Current
SYMBOL
(NOTE CONDITIONS 5.5V,
Output Voltage
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
-0.1 -0.1
+25oC, +125oC, -55oC
+25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0
Noise Immunity Functional Test
4.5V, 0.70(VCC), 0.30(VCC), (Note
NOTES: voltages reference device GND. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518758
Specifications HCS166MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 4.5V NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER
SYMBOL TPHL TPLH TPHL
(NOTES CONDITIONS 4.5V
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL (NOTE CONDITIONS 5.0V, 1MHz TEMPERATURE +25oC +125oC, Input Capacitance 5.0V, 1MHz -55oC UNITS
+25oC +125oC
Output Transition Time (Figure Clock Frequency (Figure
TTHL TTLH fmax
4.5V
+25oC +125oC, -55oC
4.5V
+25oC -55oC +125oC
Pulse Width (Figure
4.5V
+25oC -55oC +125oC
Clock Pulse Width (Figure
4.5V
+25oC -55oC +125oC
Set-up Time Data Clock, (Figure Hold Time Data Clock (Figure Removal Time Clock (Figure Set-up Time (Figure
4.5V
+25oC -55oC +125oC
4.5V
+25oC -55oC +125oC
tREM
4.5V
+25oC -55oC +125oC
4.5V
+25oC -55oC +125oC
Hold Time (Figure NOTE:
4.5V
+25oC -55oC +125oC
parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics.
Spec Number
518758
Specifications HCS166MS
TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL (NOTES CONDITIONS 5.5V, 4.5V, GND, VOUT 0.4V 4.5V, GND, VOUT -0.4V 4.5V 5.5V, 0.70(VCC), 0.30(VCC), 50µA 4.5V 5.5V, 0.70(VCC), 0.30(VCC), -50µA 5.5V, 4.5V, 0.70(VCC), 0.30(VCC), (Note 4.5V 4.5V 4.5V TEMPERATURE +25oC +25oC 0.75 UNITS
Output Current (Source) Output Voltage
+25oC
-4.0
+25oC
Output Voltage High
+25oC
-0.1
Input Leakage Current Noise Immunity Functional Test
+25oC +25oC
TPHL TPLH
+25oC +25oC +25oC
NOTES:
TPHL
voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH
DELTA LIMIT 12µA -15% Hour
Spec Number
518758
Specifications HCS166MS
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group NOTES: Alternate Group testing accordance with Method 5005 Mil-Std-883 exercised. Table parameters only. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups (Note ICC, IOL/H READ RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
TABLE TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% Go/No-Go. TEST METHOD 5005 POST Table READ RECORD POST Table (Note
TABLE STATIC DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN STATIC BURN-IN (Note GROUND 0.5V 0.5V 50kHz 25kHz
STATIC BURN-IN (Note DYNAMIC BURN-IN (Note NOTES: Each except will have resistor static burn-in Each except will have resistor dynamic burn-in
TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures.
Spec Number
518758
HCS166MS Harris Space Level Product Flow `MS'
Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note
NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Harris Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Harris Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Harris. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative.
Spec Number
518758
HCS166MS Timing Diagrams Load Circuit
tPHL tPLH tPHL tTHL tTLH INPUT LEVEL tREM INPUT LEVEL INPUT LEVEL
FIGURE CLOCK PRE-REQUISITE TIMES PROPAGATION OUTPUT TRANSITION TIMES
FIGURE MASTER RESIT PRE-REQUISITE TIMES PROPAGATION DELAYS.
VALID
INPUT LEVEL
VALID
INPUT LEVEL
DATA
INPUT LEVEL
INPUT LEVEL
FIGURE DATA PRE-REQUISITE TIMES
FIGURE PARALLEL ENABLE CLOCK ENABLE PREREQUISITE TIMES
VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
50pF
TEST POINT
FIGURE LOAD CIRCUIT
Spec Number
518758
HCS166MS Characteristics
DIMENSIONS: mils METALLIZATION: Type: AlSi Metal Thickness: GLASSIVATION: Type: SiO2 Thickness: WORST CASE CURRENT DENSITY: 105A/cm2 BOND SIZE: 100µm 100µm mils mils
Metallization Mask Layout
HCS166MS
(16) (15)
(14)
(13)
(12)
(10)
(11)
NOTE: diagram generic plot from similar device. intended indicate approximate size bond location. mask series HCS166 TA14386A.
Spec Number
518758

Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register

Top Searches for this datasheet

Other recent searches