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Radiation Hardened Synchronous Counter Pinouts LEAD CERAMIC
Top Searches for this datasheetHCS161MS Radiation Hardened Synchronous Counter Pinouts LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 VIEW SPEN September 1995 Features Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/BitDay (Typ) Dose Rate Survivability: 1012 (Si)/s Dose Rate Upset (Si)/s 20ns Pulse Cosmic Upset Immunity Error/Bit (Typ) Latch-Up Free Under Conditions Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL, Description Harris HCS161MS Radiation Hardened 4-Input Binary; synchronous counter featuring asynchronous reset lookahead carry logic. HCS161 active-low master reset zero, level synchronous parallel enable, SPE, disables counting allows data preset inputs load counter. data latched outputs positive edge clock input, HCS161MS count output, terminal count output indicates maximum count clock pulse used enable next cascaded stage count. HCS161MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS161MS supplied lead Ceramic flatpack suffix) SBDIP Package suffix). LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16 VIEW Ordering Information PART NUMBER HCS161DMSR HCS161KMSR HCS161D/Sample HCS161K/Sample HCS161HMSR TEMPERATURE RANGE -55oC +125oC -55oC +125oC +25oC +25oC +25oC SCREENING LEVEL Harris Class Equivalent Harris Class Equivalent Sample Sample PACKAGE Lead SBDIP Lead Ceramic Flatpack Lead SBDIP Lead Ceramic Flatpack CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright Harris Corporation 1995 Spec Number File Number 518755 2469.2 HCS161MS Functional Diagram TRUTH TABLE INPUTS OPERATING MODE Reset (Clear) Parallel Load Count Inhibit High Level, Level, Immaterial, OUTPUTS Count Transition from high Spec Number 518755 Specifications HCS161MS Absolute Maximum Ratings Supply Voltage -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±25mA (All Voltage Reference Terminal) Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class Reliability Information Thermal Resistance SBDIP Package. 73oC/W 24oC/W Ceramic Flatpack Package 114oC/W 29oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.68W Ceramic Flatpack Package 0.44W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.7mW/oC Ceramic Flatpack Package 8.8mW/oC CAUTION: with semiconductors, stress listed under "Absolute Maximum Ratings" applied devices (one time) without resulting permanent damage. This stress rating only. Exposure absolute maximum rating conditions extended periods affect device reliability. conditions listed under "Electrical Performance Characteristics" only conditions recommended satisfactory device operation. Operating Conditions Supply Voltage +4.5V +5.5V Input Rise Fall Times 4.5V (TR, .100ns Operating Temperature Range (TA) -55oC +125oC Input Voltage (VIL). 0.0V Input High Voltage (VIH) TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Sink) 4.5V, 4.5V, VOUT 0.4V, Output Current (Source) 4.5V, 4.5V, VOUT -0.4V, 4.5V, 3.15V, 50µA, 1.35V 5.5V, 3.85V, 50µA, 1.65V Output Voltage High 4.5V, 3.15V, -50µA, 1.35V 5.5V, 3.85V, -50µA, 1.65V Input Leakage Current 5.5V, LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -4.8 -4.0 UNITS PARAMETER Quiescent Current SYMBOL (NOTE CONDITIONS 5.5V, Output Voltage +25oC, +125oC, -55oC +25oC, +125oC, -55oC -0.1 -0.1 +25oC, +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC ±0.5 ±5.0 Noise Immunity Functional Test 4.5V, 0.70(VCC), 0.30(VCC) NOTES: voltages reference device GND. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0". Spec Number 518755 Specifications HCS161MS TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TPHL TPLH 4.5V TPHL TPLH 4.5V TPHL 4.5V TPHL 4.5V LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS PARAMETER SYMBOL TPHL TPLH (NOTES CONDITIONS 4.5V NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CONDITIONS 5.0V, 1MHz NOTES Input Capacitance 5.0V, 1MHz Output Transition Time TTHL TTLH 4.5V TEMPERATURE +25oC +125oC, -55oC +25oC +125oC +25oC +125oC UNITS NOTE: parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics. TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS TEMPERATURE +25oC +25oC +25oC -4.0 0.75 UNITS PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) SYMBOL (NOTES CONDITIONS 5.5V, 4.5V, GND, VOUT 0.4V 4.5V, GND, VOUT -0.4V Spec Number 518755 Specifications HCS161MS TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC -0.1 UNITS PARAMETER Output Voltage Output Voltage High Input Leakage Current Noise Immunity Functional Test SYMBOL TPHL TPLH (NOTES CONDITIONS 4.5V 5.5V, 0.70(VCC), 0.30(VCC), 50µA 4.5V 5.5V, 0.70(VCC), 0.30(VCC), -50µA 5.5V, 4.5V, 0.70(VCC), 0.30(VCC), (Note 4.5V 4.5V 4.5V 4.5V 4.5V 4.5V 4.5V 4.5V TPHL TPLH TPHL TPLH NOTES: TPHL TPHL voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0". TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP PARAMETER IOL/IOH DELTA LIMIT 12µA -15% Hour TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group NOTE: Alternate Group testing accordance with Method 5005 MIL-STD-883 exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups ICC, IOL/H READ RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H Spec Number 518755 Specifications HCS161MS TABLE TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% Go/No-Go. METHOD 5005 POST Table READ RECORD POST Table (Note TABLE STATIC DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 0.5V 0.5V 50kHz 25kHz STATIC BURN-IN TEST CONDITIONS (Note STATIC BURN-IN TEST CONNECTIONS (Note DYNAMIC BURN-IN TEST CONNECTIONS (Note NOTES: Each except will have resistor static burn-in. Each except will have resistor dynamic burn-in. TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures. Spec Number 518755 HCS161MS Harris Space Level Product Flow `MS' Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Harris Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Harris Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Harris. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative. Spec Number 518755 HCS161MS Timing Diagrams TPLH TPHL TTLH TTHL OUTPUT 50pF INPUT Load Circuit TEST POINT OUTPUT VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS Spec Number 518755 HCS161MS Characteristics DIMENSIONS: mils 2650 2190mm METALLIZATION: Type: AlSi Metal Thickness: GLASSIVATION: Type: SiO2 Thickness: WORST CASE CURRENT DENSITY: <2.0 105A/cm2 BOND SIZE: 100µm 100µm mils Metallization Mask Layout HCS161MS (16) (15) (14) (13) (12) (11) (10) NOTE: diagram generic plot from similar device. intended indicate approximate size bond location. mask series HCS161 TA14346A. 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