Radiation Hardened Octal Transceiver, Tri-State, Non-Inverting Pi

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Radiation Hardened Octal Transceiver, Tri-State, Non-Inverting Pi

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HCS245MS
Radiation Hardened Octal Transceiver, Tri-State, Non-Inverting
Pinouts
CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH VIEW
December 1992
Features
Micron Radiation Hardened CMOS Total Dose 200K Mega-RAD(Si) Latch-Up Free Under Conditions Fanout (Over Temperature Range) Driver Outputs LSTTL Loads Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V LSTTL Input Compatibility 0.8V VCC/2 Input Current Levels VOL,
Description
Harris HCS245MS Radiation Hardened Non-Inverting Octal Bidirectional Transceiver, Tri-State, intended two-way asynchronous communication between data busses. HCS245MS allows data transmission from from bus. logic level direction input (DIR) determines data direction. output enable input (OE) puts port high-impedance state when high. HCS245MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS245MS supplied lead Weld Seal Ceramic flatpack suffix) Weld Seal Ceramic Dual-In-Line Package suffix).
CERAMIC FLAT PACK MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH VIEW
Truth Table
CONTROL INPUTS OPERATION Data Data Isolation
Functional Diagram
TRANSCEIVERS DATA DATA (18, OTHER BUFFERS
High Voltage Level, Voltage Level, Immaterial prevent excess currents High-Z (Isolation) modes, terminals should terminated with resistors.
OUTPUT ENABLE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1992
File Number
2468.1
7-475
Specifications HCS245MS
Absolute Maximum Ratings
Supply Voltage (VCC). -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±25mA (All Voltage Reference Terminal) Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class
Reliability Information
Thermal Impedance Weld Seal 75oC/W 16oC/W Weld Seal Flat Pack 64oC/W 12oC/W Power Dissipation Package (PD) -55oC +100oC +100oC +125oC Derate Linearly 13mW/oC
CAUTION: with semiconductors, stress listed under "Absolute Maximum Ratings" applied devices (one time) without resulting permanent damage. This stress rating only. Exposure absolute maximum rating conditions extended periods affect device reliability. conditions listed under "Electrical Performance Characteristics" only conditions recommended satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). +4.5V +5.5V Input Rise Fall Times 4.5V (TR, 500ns Max. Operating Temperature Range (TA) -55oC +125oC Input Voltage (VIL). 0.0V Input High Voltage (VIH)
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -0.1 -0.1 ±0.5 ±5.0 UNITS
PARAMETERS Quiescent Current
SYMBOL
(NOTE CONDITIONS 5.5V, 4.5V, 4.5V, VOUT 0.4V, 4.5V, 4.5V, VOUT -0.4V, 4.5V, 3.15V, 50µA, 1.35V 5.5V, 3.85V, 50µA, 1.65V
Output Current (Sink) Output Current (Source) Output Voltage
Output Voltage High
4.5V, 3.15V, -50µA, 1.35V 5.5V, 3.85V, -50µA, 1.65V
Input Leakage Current Tri-State Output Leakage Current Noise Immunity Functional Test NOTE:
5.5V, GND, 4.5V 5.5V Applied Voltage 4.5V, 0.70(VCC), 0.30(VCC) (Note
voltages reference device GND. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
7-476
Specifications HCS245MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 4.5V 4.5V LIMITS TEMPERATURE
PARAMETER Propagation Delay Data Output Enable Output
SYMBOL TPLH TPHL TPZL TPZH TPLZ TPHZ
(NOTES CONDITIONS 4.5V
UNITS
+125oC,
-55oC
+25oC +125oC, -55oC
Disable Output
+25oC +125oC, -55oC
NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CONDITIONS 5.0V, 1MHz NOTES Open, 1MHz Output Transition Time NOTES: parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics. TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS -6.0 0.75 LIMITS -5.0 3.75 UNITS TTHL TTLH 4.5V TEMPERATURE +25oC +125oC, -55oC UNITS
Typical Typical
+25oC +125oC, -55oC
+25oC +125oC, -55oC
PARAMETERS Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage
SYMBOL
(NOTES CONDITIONS 5.5V, 4.5V, GND, VOUT 0.4V 4.5V, GND, VOUT -0.4V 4.5V 5.5V, 0.70(VCC), 0.30(VCC) 200K RAD, 0.12(VCC) RAD, 50µA 4.5V 5.5V, 0.70(VCC), 0.30(VCC) 200K RAD, 0.12(VCC) RAD, -50µA 5.5V, Applied Voltage
TEMPERATURE +25oC
+25oC +25oC
Output Voltage High
+25oC
-0.1
-0.1
Input Leakage Current Tri-State Output Leakage Current
+25oC
±100
7-477
Specifications HCS245MS
TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K LIMITS LIMITS UNITS
PARAMETERS Noise Immunity Functional Test Propagation Delay Data Output Enable Output Enable Output NOTES:
SYMBOL
(NOTES CONDITIONS 4.5V, 0.70(VCC), 0.30(VCC) 200K RAD, 0.12(VCC) (Note 4.5V 4.5V 4.5V
TEMPERATURE +25oC
TPLH TPHL TPZL TPZH TPLZ TPHZ
+25oC +25oC +25oC
voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0". TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH IOZL/IOZH
DELTA LIMIT 12µA -15% Hour ±200nA
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group NOTE: Alternate Group testing accordance with Method 5005 MIL-STD-883 exercised. TABLE TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% Go/No-Go. TEST METHOD 5005 POST Table READ RECORD POST Table (Note METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups ICC, IOL/H READ RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
7-478
Specifications HCS245MS
TABLE STATIC BURN-IN DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 0.5V 0.5V 50kHz 25kHz
STATIC BURN-IN TEST CONNECTIONS (Note
STATIC BURN-IN TEST CONNECTIONS (Note
DYNAMIC BURN-IN TEST CONNECTIONS (Note NOTES: Each except will have resistor static burn-in. Each except will have resistor dynamic burn-in.
TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures.
Timing Diagrams
TPLH TPHL INPUT
Load Circuit
TEST POINT
50pF TTLH TTHL OUTPUT
OUTPUT
VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
7-479
HCS245MS Tri-State Timing Diagrams
TPZL TPLZ 50pF OUTPUT TEST POINT INPUT
Tri-State Load Circuit
TRI-STATE VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 2.25 0.90 UNITS
Tri-State High Timing Diagrams
TPZH TPHZ OUTPUT INPUT
Tri-State High Load Circuit
TEST POINT
50pF
TRI-STATE HIGH VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 2.25 3.60 UNITS
7-480
HCS245MS Characteristics
DIMENSIONS: mils METALLIZATION: Type: AlSi Metal Thickness: GLASSIVATION: Type: SiO2 Thickness: ATTACH: Material: Silver Epoxy WORST CASE CURRENT DENSITY: <2.0 105A/cm2 BOND SIZE: 100µm 100µm mils mils
Metallization Mask Layout
HCS245MS
(20) (19)
(18)
(17)
(16)
(15)
(14)
(13)
(10)
(11)
(12)
7-481

Radiation Hardened Octal Transceiver, Tri-State, Non-Inverting Pi

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