28A, 100V 0.077 0.100 N-Channel Power MOSFETs JEDEC TO-220AB
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IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
28A, 100V 0.077 0.100 N-Channel Power MOSFETs
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
March 1996
Features
28A, 100V rDS(ON) 0.077 0.100 Single Pulse Avalanche Energy Rated
Description
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM N-Channel enhancement mode silicongate power field-effect transistors. types advanced power MOSFETs designed, tested, guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching convertors, motor drivers, relay drivers drivers other high-power switching devices. high input impedance allows these types operated directly from integrated circuits.
PACKAGING AVAILABILITY
JEDEC TO-262AA
DRAIN (FLANGE)
SOURCE DRAIN GATE
JEDEC TO-263AB
PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM
PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB
BRAND IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540
GATE SOURCE
DRAIN (FLANGE)
Symbol
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, i.e., RF1S540SM9A.
Formerly developmental type TA17421.
Absolute Maximum Ratings
+25oC Unless Otherwise Specified
IRF540, RF1S540, RF1S540SM IRF541 IRF542 IRF543 UNITS Drain Source Breakdown Voltage (Note BVDSS Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current +25oC. +100oC Pulsed Drain Current (Note Gate-Source Voltage .VGS Maximum Power Dissipation +25oC Dissipation Derating Factor W/oC Inductive Current, Clamped (See Figures 100µHy) Single Pulse Avalanche Energy Rating (Note Operating Storage Temperature TSTG, +175 +175 +175 +175 Maximum Lead Temperature Soldering. (0.063in (1.6mm) from case 10s) NOTES: +25oC +175oC Repetitive rating: Pulse width limited maximum junction temperature. Transient Thermal Impedance Curve (Figure 25V, starting +25oC, 440µHy, IPEAK 28A. Figures
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1996
File Number
2309.2
Specifications IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Electrical Specifications
PARAMETERS Drain-Source Breakdown Voltage IRF540, IRF542, RF1S540, RF1S540SM IRF541, IRF543 Gate Threshold Voltage Zero Gate Voltage Drain Current VGS(TH) IDSS VDS, 250µA Rating, Rating 0.8, +150oC On-State Drain Current (Note IRF540, IRF541, RF1S540, RF1S540SM IRF542, IRF543 Gate-Source Leakage Current Resistance (Note IRF540, IRF541, RF1S540, RF1S540SM IRF542, IRF543 Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 50V, 50V, 28A, 9.1, (Figure MOSFET Switching Times Essentially Independent Operating Temperature rDS(ON) 17A, 0.060 0.077 0.080 0.100 IGSS ±20V ID(ON) ID(ON) rDS(ON)MAX, ±100 BVDSS 250µA, +25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS
tD(ON) tD(OFF)
Measured from Contact Screw Center Measured from Drain Lead, (0.25in) From Package Center
Modified MOSFET Symbol Showing Internal Devices Inductances
Internal Source Inductance
Measured from Source Lead, (0.25in) from Header Source Bonding
Total Gate Charge (Gate-Source Gate-Drain) Gate-Source Charge Gate-Drain ("Miller") Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
QG(TOT)
CISS COSS CRSS
10V, 28A, BVDSS (See Figure Test Circuit) Gate Charge Essentially Independent Operating Temperature
1450
25V, 1MHz (Figure
Specifications IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Electrical Specifications
PARAMETERS Thermal Resistance Case-to-Sink Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient +25oC, Unless Otherwise Specified (Continued) SYMBOL TEST CONDITIONS Mounting Surface Flat, Smooth Greased UNITS oC/W
oC/W
Free Operation IRF540, IRF541, IRF542, IRF543, RF1S540 RF1S540SM Mounted FR-4 Board with Minimum Mounting
oC/W
oC/W
Source-Drain Diode Specifications
PARAMETERS Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) (Note SYMBOL TEST CONDITIONS Modified MOSFET Symbol Showing Integral Reverse Junction Diode
UNITS
Diode Forward Voltage (Note Reverse Recovery Time Reverse Recovery Charge NOTES:
+25oC, 27A, +25oC, 28A, dISD/dt 100A/µs +25oC, 28A, dISD/dt 100A/µs
Pulse Test: Pulse width 300µs, Duty Cycle
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Typical Performance Curves
IRF540, RF1S540, IRF542, DRAIN CURRENT IRF540, RF1S540, IRF542, 10ms IRF540, RF1S540, OPERATION THIS AREA LIMITED rDS(ON) +175oC SINGLE PULSE IRF541, +25oC 10µs 100µs ZJC, NORMALIZED THERMAL RESPONSE
0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK 10-2 10-1
VDS, DRAIN-TO-SOURCE VOLTAGE
0.01 10-5
SINGLE PULSE
10-4 10-3
RECTANGULAR PULSE DURATION
FIGURE SAFE OPERATING AREA CURVE
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
PULSE DURATION 80µs
DRAIN CURRENT
IRF540, IRF541 RF1S540, RF1S540SM IRF542, IRF543
DRAIN CURRENT
CASE TEMPERATURE (oC)
VDS, DRAIN-TO-SOURCE VOLTAGE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
FIGURE TYPICAL SATURATION CHARACTERISTICS
ID(ON), ON-STATE DRAIN CURRENT
NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE
1.25
250µA
1.15
1.05
+175oC
+25oC
0.95
PULSE TEST PULSE DURATION 80µs DUTY CYCLE 0.5% VGS, GATE-TO-SOURCE VOLTAGE
0.85
0.75
JUNCTION TEMPERATURE (oC)
FIGURE TYPICAL TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Typical Performance Curves
NORMALIZED ON-STATE RESISTANCE rDS(ON), ON-STATE RESISTANCE 10V,
(Continued)
PULSE DURATION 80µs
VGS=
JUNCTION TEMPERATURE (oC) DRAIN CURRENT
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
FIGURE TYPICAL rDS(ON) VARYING CONDITIONS GATE VOLTAGE DRAIN CURRENT
3000 VGS, GATE-TO-SOURCE VOLTAGE 1MHz CISS CGD, SHORTED CRSS COSS
2400 CAPACITANCE (pF)
1800
CISS
1200 COSS CRSS VDS, DRAIN-TO-SOURCE VOLTAGE
TOTAL GATE CHARGE (nC)
FIGURE TYPICAL CAPACITANCE VOLTAGE
FIGURE TYPICAL GATE-TO-SOURCE VOLTAGE GATE CHARGE
PULSE DURATION 80µs
50V, PULSE DURATION 80µs
gfs, TRANSCONDUCTANCE
DRAIN CURRENT
+25oC +175oC
VDS, DRAIN-TO-SOURCE VOLTAGE
DRAIN CURRENT
FIGURE TYPICAL OUTPUT CHARACTERISTIC
FIGURE TYPICAL TRANSCONDUCTANCE DRAIN CURRENT
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Typical Performance Curves
1000 IDR, REVERSE DRAIN CURRENT
(Continued)
+175oC +25oC
VSD, SOURCE-TO- DRAIN VOLTAGE
FIGURE TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
Test Circuits Waveforms
BVDSS
VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
0.01
NOTE: 0.5BVDSS; 0.75BVDSS FIGURE CLAMPED INDUCTIVE TEST CIRCUIT FIGURE CLAMPED INDUCTIVE WAVEFORMS
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Test Circuits Waveforms
(Continued)
CURRENT REGULATOR
+VDS (ISOLATED SUPPLY)
BATTERY PULSE WIDTH DUTY FACTOR 0.1%
SAME TYPE 0.2µF 0.3µF
1.5mA CURRENT SAMPLING RESISTOR
-VDS CURRENT SAMPLING RESISTOR
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE GATE CHARGE TEST CIRCUIT
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Plastic Packaging
TERM.
TO-220AB
LEAD JEDEC TO-220AB PLASTIC PACKAGE INCHES SYMBOL 0.170 0.048 0.030 0.045 0.014 0.590 0.395 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 0.200 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112 MILLIMETERS 4.32 1.22 0.77 1.15 0.36 14.99 10.04 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 5.08 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES
LEAD LEAD LEAD TERM. GATE DRAIN SOURCE DRAIN
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-220AB outline dated 3-24-87. Lead dimension finish uncontrolled Lead dimension (without solder). typically 0.002 inches (0.05mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 1-93.
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Plastic Packaging
TERM.
TO-262AA
LEAD JEDEC TO-262AA PLASTIC PACKAGE INCHES SYMBOL 0.170 0.048 0.030 0.045 0.018 0.405 0.395 0.180 0.052 0.034 0.055 0.022 0.425 0.405 MILLIMETERS 4.32 1.22 0.77 1.15 0.46 10.29 10.04 4.57 1.32 0.86 1.39 0.55 10.79 10.28 NOTES
0.100 0.200 0.045 0.095 0.530 0.110 0.055 0.105 0.550 0.130
2.54 5.08 1.15 2.42 13.47 2.80 1.39 2.66 13.97 3.30
GATE DRAIN SOURCE DRAIN
LEAD LEAD LEAD TERM.
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-262AA outline dated 6-90. Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 10-95.
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Plastic Packaging
TERM.
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE INCHES SYMBOL 0.170 0.048 0.030 0.045 0.310 0.018 0.405 0.395 0.180 0.052 0.034 0.055 0.022 0.425 0.405 MILLIMETERS 4.32 1.22 0.77 1.15 7.88 0.46 10.29 10.04 4.57 1.32 0.86 1.39 0.55 10.79 10.28 NOTES
.450 (11.43)
0.100 0.200 0.045 0.095 0.175 0.090 0.050 0.315 0.055 0.105 0.195 0.110 0.070
2.54 5.08 1.15 2.42 4.45 2.29 1.27 8.01 1.39 2.66 4.95 2.79 1.77
TERM.
.700 (17.78)
.350 (8.89)
.150 (3.81) .080(2.03) .062(1.58) .062(1.58) MINIMUM SIZE RECOMMENDED SURFACE-MOUNTED APPLICATIONS .080(2.03)
LEAD LEAD TERM.
GATE SOURCE DRAIN
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-263AB outline dated 2-92. dimensions established minimum mounting surface terminal Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. terminal length soldering. Position lead measured 0.120 inches (3.05mm) from bottom dimension Controlling dimension: Inch. Revision dated 10-95.
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Plastic Packaging
40mm MIN. ACCESS HOLE 1.5mm DIA. HOLE 4.0mm 2.0mm 1.75mm 13mm 330mm 100mm 24mm
TO-263AB
24mm TAPE REEL
30.4mm
24.4mm
16mm GENERAL INFORMATION "9A" SUFFIX PART NUMBER. PIECES REEL. ORDER MULTIPLES FULL REELS ONLY. MEETS EIA-481 REVISION SPECIFICATIONS. USER DIRECTION FEED
COVER TAPE
Revision dated 10-95
Harris Semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
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