Radiation Hardened Synchronous 4-Bit Up/Down Counter Pinouts

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Radiation Hardened Synchronous 4-Bit Up/Down Counter Pinouts

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HCS190MS
Radiation Hardened Synchronous 4-Bit Up/Down Counter
Pinouts
LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 VIEW
September 1995
Features
Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/Bit-Day (Typ) Dose Rate Survivability: 1012 (Si)/s Dose Rate Upset >1010 (Si)/s 20ns Pulse Latch-Up Free Under Conditions Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL,
Description
Harris HCS190MS asynchronously presettable Decade synchronous counter. Presetting counter number preset data inputs accomplished parallel load input (PL). Counting occurs when (PL) high, Count Enable (CE) Up/Down (U/D) input either up-counting high down-counting. counter incremented decremented synchronously with low-to-high transition clock. When overflow underflow counter occurs, Terminal Count output (TC), which during counting, goes high remains high clock cycle. This output used lookahead carry high speed cascading. output also initiates Ripple Clock output (RC) which, normally high, goes remains low-level portion clock pulse. These counter cascaded using Ripple Carry output. decade counter preset illegal state assumes illegal state when power applied, will return normal sequence counts. HCS190MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS190MS supplied lead Ceramic flatpack suffix) SBDIP Package suffix).
LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16 VIEW
TRUTH TABLE INPUTS OUTPUT FUNCTION Count Count Down Preset Change
High Voltage Level Voltage Level
Immaterial =Positive Transistion
Ordering Information
PART NUMBER HCS190DMSR HCS190KMSR HCS190D/Sample HCS190K/Sample HCS190HMSR TEMPERATURE RANGE
SCREENING LEVEL Harris Class Equivalent Harris Class Equivalent Sample Sample
PACKAGE Lead SBDIP Lead Ceramic Flatpack Lead SBDIP Lead Ceramic Flatpack
+125oC +125oC
-55oC
+25oC +25oC
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1995
Spec Number File Number
518836 2251.2
Specifications HCS190MS
Absolute Maximum Ratings
Supply Voltage -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±25mA Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class (All Voltage Reference Terminal)
Reliability Information
Thermal Resistance SBDIP Package. 73oC/W 24oC/W Ceramic Flatpack Package 114oC/W 29oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.68W Ceramic Flatpack Package 0.44W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.7mW/oC Ceramic Flatpack Package 8.8mW/oC Gate Count Gates
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Voltage Range +4.5V +5.5V Input Rise Fall Time 4.5V (tr, 100ns/V Max. Operating Temperature Range -55oC +125oC Input High Voltage. Input Voltage
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Source) 4.5V, 4.5V, VOUT -0.4V, (Note 4.5V, 4.5V, VOUT 0.4V, (Note 5.5V, 3.85V, 1.65V, -50µA 4.5V, 3.15V, 1.35V, -50µA Output Voltage 5.5V, 3.85V, 1.65V, 50µA 4.5V, 3.15V, 1.35V, 50µA Input Leakage Current 5.5V, LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -4.8 -4.0 -0.1 -0.1 UNITS
PARAMETER Supply Current
SYMBOL
(NOTE CONDITIONS 5.5V,
Output Current (Sink)
Output Voltage High
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0
Noise Immunity Functional Test
4.5V, 3.15V, 1.35V, (Note
NOTES: voltages reference device GND. Force/Measure functions interchanged. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518836
Specifications HCS190MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TPHL 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, TPLH TPHL TPLH TPHL TPLH TPHL TPLH TPHL TPLH TPHL TPLH TPHL TPLH TPHL NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER Propagation Delay
SYMBOL TPLH
(NOTES CONDITIONS 4.5V, 4.5V,
Spec Number
518836
Specifications HCS190MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CONDITIONS 5.0V, 5.0V, 1MHz 5.0V, 5.0V, 1MHz 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, NOTES TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
Setup Time
Hold Time Pulse Width Time Recovery Time TREC
Maximum Frequency Output Transition Time NOTE:
FMAX
TTHL TTLH
parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics.
TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS TEMPERATURE +25oC +25oC +25oC -4.0 0.75 UNITS
PARAMETER Supply Current Output Current (Source) Output Current (Sink)
SYMBOL
(NOTE CONDITIONS 5.5V, 4.5V, VOUT -0.4V, 4.5V, VOUT 0.4V,
Spec Number
518836
Specifications HCS190MS
TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC -0.1 -0.1 UNITS
PARAMETER Output Voltage High
SYMBOL
(NOTE CONDITIONS 5.5V, 3.85V, 1.65V, -50µA 4.5V, 3.15V, 1.35V, -50µA
Output Voltage
5.5V, 3.85V, 1.65V, 50µA 4.5V, 3.15V, 1.35V, 50µA
Input Leakage Current Noise Immunity Functional Test Propagation Delay
TPLH TPHL TPLH TPHL
5.5V, 4.5V, 3.15V, 1.35V, (Note 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V,
TPLH TPHL
TPLH TPHL
TPLH TPHL
TPLH TPHL
TPLH TPHL
TPLH TPHL
NOTES: voltages referenced device GND. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH
DELTA LIMIT 12µA -15% Hour
Spec Number
518836
Specifications HCS190MS
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group NOTE: Alternate group testing accordance with Method 5005 Mil-Std-883 exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups ICC, IOL/H, IOZL/H READ RECORD ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H
TABLE TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% go/no-go. TABLE STATIC DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN STATIC BURN-IN (Note STATIC BURN-IN (Note DYNAMIC BURN-IN (Note NOTES: Each except will have series resistor Each except will have series resistor GROUND 0.5V 0.5V 50kHz 25kHz TEST METHOD 5005 POST Table READ RECORD POST Table (Note
TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures.
Spec Number
518836
HCS190MS Harris Space Level Product Flow `MS'
Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note
NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Harris Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Harris Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Harris. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative.
Spec Number
518836
HCS190MS Propagation Delay Timing Diagram
TPLH TPHL OUTPUT 50pF INPUT
Propagation Delay Load Circuit
TEST POINT
Transition Timing Diagram
TTLH TTHL
OUTPUT
VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
Pulse Width, Setup, Hold Timing Diagram Propagation Delay Load Circuit Positive Edge Trigger
INPUT INPUT 50pF TEST POINT
Hold Time Setup Time Pulse Width VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
Spec Number
518836
HCS190MS Characteristics
DIMENSIONS: (mils) 2.65 2.19 (mm) METALLIZATION: Type: Thickness: GLASSIVATION: Type: SiO2 Thickness: WORST CASE CURRENT DENSITY: <2.0 A/cm2 BOND SIZE: (mils) 100µm
Metallization Mask Layout
HCS190MS
(16)
(15)
(14)
(13)
(12)
(11)
NOTE: diagram generic plot from similar device. intended indicate approximate size bond location. mask series HCS190 TA14344A.
(10)
Spec Number
518836

Radiation Hardened Synchronous 4-Bit Up/Down Counter Pinouts

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