25A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET (Meg

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25A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET (Meg

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RFP25N05
25A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET (MegaFET)
JEDEC TO-220AB
April 1995
Features
25A, rDS(ON) 0.047 Temperature Compensating PSPICE Model Peak Current Pulse Width Curve Rating Curve +175oC Operating Temperature
SOURCE DRAIN GATE
DRAIN (FLANGE)
Description
RFP25N05 N-channel power MOSFET manufactured using MegaFET process. This process which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers. This transistor operated directly from integrated circuits.
PACKAGE AVAILABILITY PART NUMBER RFP25N05 PACKAGE TO-220AB BRAND RFP25N05
Symbol
NOTE: When ordering entire part number.
Formerly developmental type TA09771.
Absolute Maximum Ratings
+25oC RFP25N05 UNITS Refer Peak Current Curve Refer Curve 0.48 +175 W/oC
Drain-Source Voltage .VDSS Drain-Gate Voltage VDGR Gate-Source Voltage Drain Current Continuous Pulsed Drain Current. Pulsed Avalanche Rating .EAS Power Dissipation +25oC Derate above +25oC Operating Storage Temperature TSTG, Soldering Temperature Leads
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1995
File Number
2112.2
Specifications RFP25N05
Electrical Specifications
PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current +25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 0.25mA, VDS, 0.25mA 50V, ±20V 25A, =25V, 12.5A, 2.0, 10V, +25oC +150oC 25A, 25V, 1MHz 40V, 25A, 1075 0.047 2.083 UNITS
oC/W oC/W
Gate-Source Leakage Current Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient
IGSS rDS(ON) tD(ON) tD(OFF) tOFF QG(TOT) QG(10) QG(TH) VPLATEAU CISS COSS CRSS
Source-Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 25A, dISD/dt 100A/µs UNITS
RFP25N05 Typical Performance Curves
DRAIN CURRENT ZJC, NORMALIZED THERMAL RESPONSE +25oC NOTES: DUTY FACTOR: t1/t2 PEAK
100µs OPERATION THIS AREA LIMITED rDS(ON)
10ms VDSS 100ms
VDS, DRAIN-TO-SOURCE VOLTAGE
SINGLE PULSE 0.01 10-3 10-4 10-2 10-1 10-5 RECTANGULAR PULSE DURATION
FIGURE SAFE OPERATING AREA CURVE
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
+25oC PEAK CURRENT CAPABILITY TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION
CASE TEMPERATURE (oC)
10-4
10-3 10-2 10-1 PULSE WIDTH
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT TEMPERATURE
FIGURE PEAK CURRENT CAPABILITY
PULSE DURATION 250µs, +25oC ID(ON) ON-STATE DRAIN CURRENT DRAIN CURRENT 4.5V
-55oC GATE-TO-SOURCE VOLTAGE PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5% +175oC +25oC
DRAIN-TO-SOURCE VOLTAGE
FIGURE TYPICAL SATURATION CHARACTERISTICS
FIGURE TYPICAL TRANSFER CHARACTERISTICS
RFP25N05 Typical Performance Curves (Continued)
250µA BVDSS NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE VGS(TH) NORMALIZED GATE 250µA
THRESHOLD VOLTAGE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
PULSE DURATION 250µs, 10V, rDS(ON) NORMALIZED RESISTANCE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
POWER DISSIPATION MULTIPLIER
JUNCTION TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
1MHz
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
DRAIN-SOURCE VOLTAGE BVDSS BVDSS
GATE-SOURCE VOLTAGE
1600
CAPACITANCE (pF)
37.5
1200 CISS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS IG(REF) 0.75mA
COSS CRSS
12.5
DRAIN-TO-SOURCE VOLTAGE
TIME (µs)
FIGURE TYPICAL CAPACITANCE VOLTAGE
FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT. REFER HARRIS APPLICATION NOTES AN7254 AN7260
RFP25N05 Typical Performance Curves (Continued)
AVALANCHE CURRENT
STARTING +25oC
STARTING +150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.01 tAV, TIME AVALANCHE (ms)
FIGURE UNCLAMPED INDUCTIVE SWITCHING. REFER HARRIS APPLICATION NOTES AN9321 AN9322
Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tD(ON)
tOFF tD(OFF)
PULSE WIDTH
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
RFP25N05 Temperature Compensated PSPICE Model RFP25N05
.SUBCKT RFP25N05 8/19/94
1.83e-9 1.98e-9 9.7e-10
DPLCAP LDRAIN RSCL1 RSCL2 ESCL MOS1 RSOURCE LSOURCE SOURCE RDRAIN EBREAK MOS2 DBODY DBREAK
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 65.9 EVTO
GATE
DRAIN
EVTO
LDRAIN 1e-9 LGATE 4.92e-9 LSOURCE 4.5e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01
LGATE
RGATE
RBREAK RVTO VBAT
RBREAK RBKMOD RDRAIN RDSMOD 1.1e-3 RGATE 2.88 RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 20.3e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD VBAT 0.764
ESCL VALUE .MODEL DBDMOD 2.32e-13 5.72e-3 TRS1 2.56e-3 TRS2 -5.13e-6 1.18e-9 5.62e-8) .MODEL DBKMOD 2.00e-1 TRS1 3.33e-4 TRS2 2.68e-6) .MODEL DPLCAPMOD (CJO 6.55e-10 1e-30 .MODEL MOSMOD NMOS (VTO 3.89 15.03 1e-30 .MODEL RBKMOD (TC1 1.04e-3 -1.04e-6) .MODEL RDSMOD (TC1 5.85e-3 1.77e-5) .MODEL RSCLMOD (TC1 2.0e-3 1.5e-6) .MODEL RVTOMOD (TC1 -5.35e-3 -3.77e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 1.98 VOFF= -3.02) .ENDS NOTE: further discussion PSPICE model consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
RFP25N05 TERM.
TO-220AB
LEAD JEDEC TO-220AB PLASTIC PACKAGE INCHES SYMBOL 0.170 0.048 0.030 0.045 0.014 0.590 0.395 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 0.200 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112 MILLIMETERS 4.32 1.22 0.77 1.15 0.36 14.99 10.04 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 5.08 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES
LEAD LEAD LEAD TERM. MOUNTING FLANGE GATE DRAIN SOURCE DRAIN
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-220AB outline dated 3-24-87. Lead dimension finish uncontrolled Lead dimension (without solder). typically 0.002 inches (0.05mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 1-93.
Harris Semiconductor products sold description only. Harris Semiconductor reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Harris believed accurate reliable. However, responsibility assumed Harris subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Harris subsidiaries.
Sales Office Headquarters
general information regarding Harris Semiconductor products, call 1-800-4-HARRIS UNITED STATES Harris Semiconductor 883, Mail Stop 53-210 Melbourne, 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2-724-2111 ASIA Harris Semiconductor Ltd. Tannery Road Cencon #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400

25A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET (Meg

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