TOSHIBA Transistor Silicon Epitaxial Type (PCT Process) (Transistor wi

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TOSHIBA Transistor Silicon Epitaxial Type (PCT Process) (Transistor wi

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RN1901AFS~RN1906AFS
TOSHIBA Transistor Silicon Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS
1.0±0.05
Unit:
0.35 0.35
1.0±0.05
Incorporating bias resistor into transistor reduces parts count. Reducing parts count enables manufacture ever more compact equipment saves assembly costs.
0.7±0.05
0.1±0.05
Complementary RN2901AFS~RN2906AFS
+0.02 -0.04
Lead (Pb) free
Equivalent Circuit Bias Resistor Values
Type RN1901AFS RN1902AFS RN1903AFS RN1904AFS RN1905AFS RN1906AFS
0.48
JEDEC JEITA TOSHIBA
EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 COLLECTOR1
(E1) (B1) (C2) (E2) (B2) (C1)
2-1F1D
Weight: 0.001 (typ.)
Maximum Ratings 25°C) (Q1, common)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1901AFS~1906AFS RN1901AFS~1906AFS RN1901AFS~1904AFS RN1905AFS, 1906AFS Symbol VCBO VCEO VEBO (Note) Tstg Rating -55~150 Unit
Equivalent Circuit (top view)
Note: Total rating
2005-03-23
0.15±0.05
devices incorporated into fine-pitch, Small-Mold (6-pin) package.
0.1±0.05
0.8±0.05
0.1±0.05
RN1901AFS~RN1906AFS
Electrical Characteristics 25°C) (Q1, common)
Characteristic Collector cutoff current RN1901AFS~1906AFS RN1901AFS RN1902AFS Emitter cutoff current RN1903AFS RN1904AFS RN1905AFS RN1906AFS RN1901AFS RN1902AFS current gain RN1903AFS RN1904AFS RN1905AFS RN1906AFS Collector-emitter saturation voltage RN1901AFS (sat) RN1902AFS~1906AFS RN1901AFS RN1902AFS Input voltage (ON) RN1903AFS RN1904AFS RN1905AFS RN1906AFS Input voltage (OFF) Collector output capacitance RN1901AFS~1904AFS RN1905AFS, 1906AFS RN1901AFS~1906AFS RN1901AFS RN1902AFS Input resistor RN1903AFS RN1904AFS RN1905AFS RN1906AFS RN1901AFS~1904AFS Resistor ratio RN1905AFS RN1906AFS R1/R2 (OFF) (ON) 0.25 IEBO Symbol ICBO ICEO Test Condition 0.89 0.41 0.18 0.088 0.085 0.08 Typ. 1.33 0.63 0.29 0.133 0.127 0.121 Unit
0.15
3.76 17.6 37.6 1.76 3.76
5.64 26.4 56.4 2.64 5.64
0.0376 0.0468 0.0562 0.08 0.12
2005-03-23
RN1901AFS~RN1906AFS
RN1901AFS (ON)
COLLECTOR CURRENTIC (mA)
RN1902AFS
(ON)
COLLECTOR CURRENTIC (mA)
COMMON EMITTER
COMMON EMITTER
Ta=100°C
Ta=100°C
INPUT VOLTAGE (ON)
INPUT VOLTAGE (ON)
COLLECTOR CURRENTIC (mA)
RN1903AFS
(ON)
COLLECTOR CURRENTIC (mA)
RN1904AFS
(ON)
COMMON EMMITER
COMMON EMITTER
100°C
100°C
INPUT VOLTAGE (ON)
INPUT VOLTAGE (ON)
RN1905AFS
COLLECTOR CURRENTIC (mA)
(ON)
COLLECTOR CURRENTIC (mA)
RN1906AFS
(ON)
COMMON EMITTER
COMMON EMITTER
100°C
100°C
INPUT VOLTAGE (ON)
INPUT VOLTAGE (ON)
2005-03-23
RN1901AFS~RN1906AFS
RN1901AFS (OFF) 10000
COLLECTOR CURRENTIC (uA)
RN1902AFS
(OFF)
10000
COLLECTOR CURRENT (uA)
COMMON EMITTER
COMMON EMITTER
1000 100°C
1000 100°C
INPUT VOLTAGE (OFF)
INPUT VOLTAGE (OFF)
RN1903AFS 10000
COLLECTOR CURRENTIC (uA)
(OFF) 10000
COLLECTOR CURRENTIC (uA)
RN1904AFS
(OFF)
COMMON EMMITER VCE=
COMMON EMITTER VCE=
1000
100°C
1000 100°C
INPUT VOLTAGE (OFF)
INPUT VOLTAGE (OFF)
RN1905AFS 10000
COLLECTOR CURRENTIC (uA)
(OFF) 10000
COLLECTOR CURRENTIC (uA)
RN1906AFS
(OFF)
COMMON EMITTER
COMMON EMITTER
1000 100°C
1000 100°C
INPUT VOLTAGE (OFF)
INPUT VOLTAGE (OFF)
2005-03-23
RN1901AFS~RN1906AFS
1000 COMMON EMITTER
CURRENT GAIN
1000
RN1901AFS
RN1902AFS
COLLECTOR EMITTER
CURRENT GAIN
100°C
100°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
RN1903AFS 1000
1000
RN1904AFS
hFE-
COMMON EMMITER VCE=
CURRENT GAIN CURRENT GAIN
COMMON EMITTER VCE=
Ta=100°C
100°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
RN1905AFS 1000
1000
RN1906AFS
COMMON EMITTER
CURRENT GAIN CURRENT GAIN
COMMON EMITTER
Ta=100°C
100°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
2005-03-23
RN1901AFS~RN1906AFS
RN1901AFS
COLLECTOR-EMITTER SATURATION VOLTAGE (sat) COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
(sat)
RN1902AFS
(sat)
COMMON EMITTER
COMMON EMITTER
Ta=100°C
100°C
0.01 COLLECTOR CURRENT (mA)
0.01 COLLECTOR CURRENT (mA)
RN1903AFS
COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
(sat)
COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
RN1904AFS
VCE(sat)
COMMON EMMITER
COMMON EMITTER
100°C
100°C
0.01 COLLECTOR CURRENT (mA)
0.01 COLLECTOR CURRENT (mA)
RN1905AFS
COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
(sat)
COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
RN1906AFS
(sat)
COMMON EMITTER
COMMON EMITTER
100°C
100°C
0.01 COLLECTOR CURRENT (mA)
0.01 COLLECTOR CURRENT (mA)
2005-03-23
RN1901AFS~RN1906AFS
Type Name
Marking
Type Name
RN1901AFS
Type Name
RN1902AFS
RN1903AFS
Type Name
RN1904AFS
Type Name
Type Name
RN1905AFS
Type Name
RN1906AFS
2005-03-23
RN1901AFS~RN1906AFS
RESTRICTIONS PRODUCT
information contained herein subject change without notice.
030619EAA
information contained herein presented only guide applications products. responsibility assumed TOSHIBA infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights TOSHIBA others. TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards oCTafety making safe design entire system, avoid situations which malfunction failure oCTuch TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. TOSHIBA products should embedded downstream products which prohibited produced sold, under regulations.
2005-03-23

TOSHIBA Transistor Silicon Epitaxial Type (PCT Process) (Transistor wi

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