SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Di

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SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Di

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MBRS340
SCHOTTKY POWER RECTIFIER
General Description: Schottky Barrier Diodes make rectification effect metal silicon barrier. They ideally suited high frequency rectification switching regulators converters. This device offers forward voltage performance power surface mount package applications where size weight critical. Features:
DISCRETE POWER SIGNAL TECHNOLOGIES
Compact surface mount package with J-bend leads (SMC). Watt Power Dissipation package. Ampere, forward voltage less than Ordering: inch reel (330 mm); Tape; 3,000 units reel.
Absolute Maximum Ratings* Parameter
Storage Temperature Maximum Junction Temperature
25OC unless otherwise noted
Value
+150 +125
Units
Repetitive Peak Reverse Voltage (VRRM) Average Rectified Forward Current 100OC) 90OC) Surge Repetitive Forward Current (Half wave, single phase, Junction Case Thermal Resistance
Package (DO-214AB)
OC/W
*These ratings limiting values above which serviceability semiconductor device impaired
Electrical Characteristics
25OC unless otherwise noted
Actual Size
CHARACTERISTICS Reverse Leakage Current Duty Cycle Forward Voltage Duty Cycle
UNITS
TEST CONDITIONS 25OC 100OC 25OC
1997 Fairchild Semiconductor Corporation
DISCRETE POWER SIGNAL TECHNOLOGIES
Actual Size
(mils)
(mm) 5.59 6.60 2.00 7.75 2.92 0.10 0.76 0.15
(mm) 6.22 7.11 2.62 8.13 3.18 3.18 1.52 0.31
(mils)
PACKAGE
PACKAGE CODE (MC) Fairchild Semiconductor's Criteria

SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Di

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