These Complementary MOSFET half bridge devices produced using National
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NDS8839H Complementary MOSFET Half Bridge
These Complementary MOSFET half bridge devices produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage half bridge applications CMOS applications when both gates connected together.
March 1996
Features
N-Channel 5.7A, 30V, RDS(ON)=0.045 VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.09 VGS=-10V. High density cell design extremely RDS(ON). High power current handling capability widely used surface mount package. Matched pair equal input capacitance power capability
Vout Vout Vout N-Gate Vout
P-Gate
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation (Single Device) TJ,TSTG
25°C unless otherwise noted
N-Channel
(Note
P-Channel
Units
(Note (Note (Note
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note (Single Device) Thermal Resistance, Junction-to-Case (Single Device)
(Note
°C/W °C/W
NDS8839H Rev.
Electrical Characteristics
Symbol Parameter CHARACTERISTICS BVDSS IDSS
25°C unless otherwise noted)
Conditions
Type
Units
Drain-Source Breakdown Voltage
-250 55°C 55°C
N-Ch P-Ch N-Ch
Zero Gate Voltage Drain Current
P-Ch
IGSSF IGSSR VGS(th)
Gate Body Leakage, Forward Gate Body Leakage, Reverse
VDS= VGS, 125°C VGS, -250 125°C
-100
CHARACTERISTICS (Note Gate Threshold Voltage N-Ch P-Ch N-Ch 125°C -4.0 125°C -4.5 -3.2 ID(on) On-State Drain Current Forward Transconductance -4.0 DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance N-Channel P-Channel N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Ch -0.7 -1.6 -1.2 0.04 0.055 0.066 0.092 -2.8 -2.2 0.045 0.09 0.09 0.18 0.15
RDS(ON)
Static Drain-Source On-Resistance
0.053 0.075
Output Capacitance Reverse Transfer Capacitance
NDS8839H Rev.
Electrical Characteristics
Symbol tD(on) tD(off) Parameter Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
25°C unless otherwise noted)
Conditions N-Channel VGEN RGEN P-Channel VGEN RGEN
Type N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
Units
SWITCHING CHARACTERISTICS (Note
N-Channel P-Channel -4.0
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time -2.0 N-Ch P-Ch
(Note (Note
-0.85 -1.2
N-Ch P-Ch
N-Ch N-Channel dIF/dt A/µs P-Channel -2.0 dIF/dt A/µs P-Ch
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
+RCA
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 50oC/W when mounted cpper. 105oC/W when mounted 0.04 cpper. 125oC/W when mounted 0.006 cpper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%. NDS8839H Rev.
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
DRAIN-SOURCE CURRENT
=10V
-10V
-6.0
-5.0 -4.5 -4.0
-3.5
-3.0
DRAIN-SOURCE VOLTAGE
DRAIN-SOURCE VOLTAGE
Figure N-Channel On-Region Characteristics.
Figure P-Channel On-Region Characteristics.
DRAIN-SOURCE ON-RESISTANCE DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
-3.5V
DS(ON) NORMALIZED
-4.5 -5.0
-6.0
DRAIN CURRENT
DRAIN CURRENT
Figure N-Channel On-Resistance Variation with Gate Voltage Drain Current.
Figure P-Channel On-Resistance Variation with Gate Voltage Drain Current.
DS(ON) NORMALIZED
DS(ON) NORMALIZED
4.0A =10V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
-4.0A
-10V
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Figure N-Channel On-Resistance Variation with Temperature.
Figure P-Channel On-Resistance Variation with Temperature.
NDS8839H Rev.
Typical Electrical Characteristics
DRAIN-SOURCE ON-RESISTANCE 1.75 1.25 DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED
-10V
DS(ON) NORMALIZED
125°C
125°C
25°C
25°C
-55°C
0.75
-55°C
DRAIN CURRENT
DRAIN CURRENT
Figure N-Channel On-Resistance Variation with Drain Current Temperature.
Figure P-Channel On-Resistance Variation with Drain Current Temperature.
DRAIN CURRENT
-55°C
25°C
125°C
DRAIN CURRENT
-10V
-55°C 125°C 25°C
GATE SOURCE VOLTAGE
GATE SOURCE VOLTAGE
Figure N-Channel Transfer Characteristics.
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
Figure P-Channel Transfer Characteristics.
GATE-SOURCE THRESHOLD VOLTAGE
250µA
NORMALIZED
-250µA
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Figure N-Channel Gate Threshold Variation with Temperature.
Figure P-Channel Gate Threshold Variation with Temperature.
NDS8839H Rev.
Typical Electrical Characteristics
NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08 1.06 1.04 1.02 0.98 0.96 0.94 JUNCTION TEMPERATURE (°C)
NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE
250µA
1.05
-250µA
0.95
JUNCTION TEMPERATURE (°C)
Figure N-Channel Breakdown Voltage Variation with Temperature.
2000 1500 1000 CAPACITANCE (pF)
Figure P-Channel Breakdown Voltage Variation with Temperature.
2000
1000 CAPACITANCE (pF)
DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE
Figure N-Channel Capacitance Characteristics.
Figure P-Channel Capacitance Characteristics.
GATE-SOURCE VOLTAGE
-VGS GATE-SOURCE VOLTAGE
4.0A
-4.0A
VDS=
-10V
-20V
GATE CHARGE (nC)
GATE CHARGE (nC)
Figure N-Channel Gate Charge Characteristics.
Figure P-Channel Gate Charge Characteristics.
NDS8839H Rev.
Typical Electrical Thermal Characteristics
TRANSCONDUCTANCE (SIEMENS) TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
-10V
-55°C 25°C 125°C
125°C
DRAIN CURRENT
DRAIN CURRENT
Figure N-Channel Transconductance Variation with Drain Current Temperature.
Figure P-Channel Transconductance Variation with Drain Current Temperature.
REVERSE DRAIN CURRENT
REVERSE DRAIN CURRENT
125°C
125°C
25°C
25°C
-55°C
-55°C
0.01
0.01
0.001
BODY DIODE FORWARD VOLTAGE
0.001
-VSD BODY DIODE FORWARD VOLTAGE
Figure N-Channel Body Diode Forward Voltage Variation with Current Temperature.
Figure P-Channel Body Diode Forward Voltage Variation with Current Temperature.
STEADY-STATE POWER DISSIPATION
4.5"x5" FR-4 Board Still
COPPER MOUNTING AREA
Figure SO-8 Single Device Power Dissipation versus Copper Mounting Area.
NDS8839H Rev.
Typical Thermal Characteristics
STEADY-STATE DRAIN CURRENT
STEADY-STATE DRAIN CURRENT
4.5"x5" FR-4 Board Still
4.5"x5" FR-4 Board Still -10V
COPPER MOUNTING AREA
COPPER MOUNTING AREA
Figure N-Ch Maximum Steady-State Drain Current versus Copper Mounting Area.
Figure P-Ch Maximum Steady-State Drain Current versus Copper Mounting Area.
DRAIN CURRENT
DRAIN CURRENT
0.05
SINGLE PULSE Note 25°C
0.05
-10V SINGLE PULSE Note 25°C
0.01
DRAIN-SOURCE VOLTAGE
0.01
DRAIN-SOURCE VOLTAGE
Figure N-Ch Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 TIME (sec)
0.05 0.02 0.01 Single Pulse
Figure P-Ch Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Duty Cycle,
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDS8839H Rev.
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