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NDS0605 P-Channel Enhancement Mode Field Effect Transistor
These P-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process been designed minimize on-state resistance, provide rugged reliable performance fast switching. They used, with minimum effort, most applications requiring 0.18A deliver pulsed currents This product particularly suited voltage applications requiring current high side switch.
April 1995
Features
-0.18A, -60V. RDS(ON) -10V. Voltage controlled p-channel small signal switch. High density cell design RDS(ON) High saturation current.
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS TJ,TSTG Drain-Source Voltage
25°C unless otherwise noted
NDS0605 -0.18 25°C 0.36
Units
Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Drain Current Continuous Pulsed Maximum Power Dissipation
mW/oC
Derate above 25°C Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/16" from case seconds
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient °C/W
NDS0605 Rev.
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 125°C Gate Body Leakage, Forward Gate Body Leakage, Reverse
(Note
Conditions
Units
-500 -100
VDS= VGS, -250 125°C -0.5 125°C -4.5 -0.25 125°C -0.6
CHARACTERISTICS
Gate Threshold Voltage
-2.8
Static Drain-Source On-Resistance
ID(on)
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
-4.5 -0.2
-0.6 -0.25 0.07
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
SWITCHING CHARACTERISTICS Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time
-0.2 RGEN
DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Source Diode Current Maximum Pulsed Source Diode Current (Note Drain-Source Diode Forward Voltage -0.5
(Note
-0.18 -1.5 125°C -1.3
Note Pulse Test: Pulse Width Duty Cycle 2.0%.
NDS0605 Rev.
Typical Electrical Characteristics
-1.4 DRAIN-SOURCE CURRENT
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-10V
-1.2 -0.8 -0.6
-0.4 -0.2
DRAIN-SOURCE VOLTAGE
-0.2
-0.4
-0.6 -0.8 DRAIN CURRENT
-1.2
-1.4
Figure On-Region Characteristics
Figure On-Resistance Variation with Gate Voltage Drain Current
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE
DS(ON) NORMALIZED
-0.5A -10V
DS(on) NORMALIZED
125°C
-4.5V -10V
-0.2 -0.4 -0.6 -0.8 DRAIN CURRENT -1.2 -1.4
JUNCTION TEMPERATURE (°C)
Figure On-Resistance Variation with Temperature
Figure On-Resistance Variation with Drain Current Temperature
-1.2
-10V
DRAIN CURRENT
-55°C
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
1.05 0.95 0.85
-1mA
-0.8 -0.6 -0.4 -0.2
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics
Figure Gate Threshold Variation with Temperature
NDS0605 Rev.
Typical Electrical Characteristics (continued)
BVDSS NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
REVERSE DRAIN CURRENT
-10µA
1.05
125°C
0.95
JUNCTION TEMPERATURE (°C)
-VSD BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature
Figure Body Diode Forward Voltage Variation with Current Temperature
GATE-SOURCE VOLTAGE
CAPACITANCE (pF)
-12V
-0.5A
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
TRANSCONDUCTANCE (SIEMENS)
-55°C
-10V
-0.2 -0.4 -0.6 -0.8 DRAIN CURRENT -1.2 -1.4
Figure Transconductance Variation with Drain Current Temperature
NDS0605 Rev.
Typical Electrical Characteristics (continued)
DRAIN CURRENT
0.05
0.01 0.005
-10V SINGLE PULSE 25°C
DRAIN-SOURCE VOLTAGE
Figure Maximum Safe Operating Area
TRANSIENT THERMAL RESISTANCE 0.05
0.05 0.02 P(pk) r(t), NORMALIZED EFFECTIVE
r(t)
0.01
0.01 Single Pulse
0.002 0.001 0.0001 0.001 0.01 TIME (sec)
Duty Cycle,
Figure Transient Thermal Response Curve.
NDS0605 Rev.
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