These N-Channel enhancement mode power field effect transistors produc

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These N-Channel enhancement mode power field effect transistors produc

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NDP7051 NDB7051 N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such automotive, DC/DC converters, motor controls, other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
August 1996
Features
70A, 50V. RDS(ON) 0.013 VGS=10V. Critical electrical parameters specified elevated temperature. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design extremely RDS(ON). TO-220 TO-263 (D2PAK) package both through hole surface mount applications.
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS TJ,TSTG Drain-Source Voltage Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Nonrepetitive Drain Current Continuous Pulsed
25°C unless otherwise noted
NDP7051 0.87
NDB7051
Units
Maximum Power Dissipation 25°C Derate above 25°C Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
W/°C
NDP7051 Rev.
Electrical Characteristics
Symbol Parameter WDSS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on)
25°C unless otherwise noted)
Conditions
Units
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 125°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VGS, 125°C Static Drain-Source On-Resistance 125°C On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance 1930
CHARACTERISTICS
-100
CHARACTERISTICS (Note Gate Threshold Voltage
0.011 0.013 0.018 0.023
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RGEN
NDP7051 Rev.
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted)
Conditions
Units °C/W °C/W
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage (Note 125°C Reverse Recovery Time Reverse Recovery Current Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient dIF/dt A/µs
1.15 62.5
THERMAL CHARACTERISTICS
Note: Pulse Test: Pulse Width Duty Cycle 2.0%.
NDP7051 Rev.
Typical Electrical Characteristics
=20V
DRAIN-SOURCE CURRENT
DS(on) NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
DS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.75
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
=10V
1.75
125°C
1.25
1.25
25°C
0.75
0.75
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
DRAIN CURRENT
125°C
VGS(th) NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
-55°C
25°C
250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDP7051 Rev.
Typical Electrical Characteristics (continued)
1.15 NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE REVERSE DRAIN CURRENT
250µA
125°C 25°C
1.05
-55°C
0.95
0.01
JUNCTION TEMPERATURE (°C)
0.001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
GATE-SOURCE VOLTAGE
5000 4000 3000
Ciss
CAPACITANCE (pF) 2000
Coss
1000
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
toff
d(on)
td(off)
VOUT
INVERTED
I10%
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDP7051 Rev.
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
DRAIN CURRENT
-55°C 25°C 125°C
SINGLE PULSE 1.15 25°C
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure Transconductance Variation with Drain Current Temperature.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05
0.02 P(pk) 0.05
r(t), NORMALIZED EFFECTIVE
r(t) 1.15 °C/W
0.01 Single Pulse
0.03 0.02 0.01 0.01
Duty Cycle,
,TIME (ms)
0.05
1000
10000
Figure Transient Thermal Response Curve.
NDP7051 Rev.

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