These N-Channel enhancement mode power field effect transistors produc

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These N-Channel enhancement mode power field effect transistors produc

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NDP6060 NDB6060 N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such automotive, DC/DC converters, motor controls, other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
March 1996
Features
48A, 60V. RDS(ON) 0.025 VGS=10V. Critical electrical parameters specified elevated temperature. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design extremely RDS(ON). TO-220 TO-263 (D2PAK) package both through hole surface mount applications.
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Nonrepetitive Drain Current Continuous Continuous Pulsed TJ,TSTG Total Power Dissipation 25°C Derate above 25°C
25°C unless otherwise noted
NDP6060
NDB6060
Units
Tc=25 TC=100
0.67
W/°C
Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
NDP6060 Rev. NDB6060 Rev.
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted)
Conditions
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note WDSS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 125°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VGS, 125°C Static Drain-Source On-Resistance 125°C On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance 1190 1800 0.02 0.032 -100
CHARACTERISTICS (Note Gate Threshold Voltage 0.025 0.04
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RGEN
NDP6060 Rev. NDB6060 Rev.
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted)
Conditions
Units
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage (Note 125°C Reverse Recovery Time Reverse Recovery Current dIF/dt A/µs
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 °C/W °C/W
Note: Pulse Test: Pulse Width Duty Cycle 2.0%.
NDP6060 Rev. NDB6060 Rev.
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED
6.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics
Figure On-Resistance Variation with Gate Voltage Drain Current
DRAIN-SOURCE ON-RESISTANCE 1.75 1.25 0.75
DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED
DS(ON) NORMALIZED
125°C
25°C
-55°C
DRAIN CURRENT
JUNCTION TEMPERATURE (°C)
Figure On-Resistance Variation with Temperature
Figure On-Resistance Variation with Drain Current Temperature
DRAIN CURRENT
GS(th) NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
-55°C 125°C
25°C
250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics
Figure Gate Threshold Variation with Temperature
NDP6060 Rev. NDB6060 Rev.
Typical Electrical Characteristics (continued)
NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.15 REVERSE DRAIN CURRENT
250µA
125°C
1.05
25°C
-55°C
0.01
0.95
0.001
JUNCTION TEMPERATURE (°C)
0.0001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature
Figure Body Diode Forward Voltage Variation with Current Temperature
GATE-SOURCE VOLTAGE
3000 2000
Ciss
CAPACITANCE (pF) 1000
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
d(on)
toff td(off)
VOUT
INVERTED
PULSE WIDTH
Figure Switching Test Circuit
Figure Switching Waveforms
NDP6060 Rev. NDB6060 Rev.
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
=10V
-55°C
DRAIN CURRENT
25°C
125°C
SINGLE PULSE 25°C
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature
Figure Maximum Safe Operating Area
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
r(t) °C/W
P(pk)
0.05
0.05 0.03 0.02 0.01 0.01
0.02 0.01 Single Pulse
Duty Cycle,
0.02
0.05
,TIME (ms)
1000
Figure Transient Thermal Response Curve
NDP6060 Rev. NDB6060 Rev.

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