These P-Channel enhancement mode power field effect transistors produc
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NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor
These P-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
1996 ADVANCE INFORMATIO
Features
-2.3A, -30V. RDS(ON) 0.11 -10V RDS(ON) 0.18 -4.5V High density cell design extremely RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power current handling capability.
SuperSOTTM-8
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TJ,TSTG Maximum Power Dissipation
25°C unless otherwise noted
NDH8502P
(Note
Units
-2.3
(Note
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH8502P.SAM
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