These N-Channel enhancement mode power field effect transistors produc

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NDH8436 N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such battery powered circuits portable electronics where fast switching, in-line power loss, resistance transients needed.
1996
Features
5.8A, 30V. RDS(ON) 0.03 RDS(ON) 0.045 4.5V High density cell design extremely RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power current handling capability.
Absolute Maximum Ratings 25°C unless otherwise noted
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note (Note (Note
NDH8436
Units
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH8436.SAM
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse
(Note
-100
VDS= VGS, 125°C 125°C 0.022 0.032 0.035
CHARACTERISTICS
Gate Threshold Voltage
0.03 0.06 0.045
Static Drain-Source On-Resistance
ID(on) Ciss Coss Crss tD(on) tD(off)
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGEN RGEN
NDH8436.SAM
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Parameter
Conditions
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted cpper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH8436.SAM
Typical Electrical Characteristics
=10V
DRAIN-SOURCE CURRENT
DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED
3.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics
Figure On-Resistance Variation with Drain Current Gate Voltage
DRAIN-SOURCE ON-RESISTANCE
DS(ON) NORMALIZED
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
5.8A
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature
Figure On-Resistance Variation with Drain Current Temperature
DRAIN CURRENT
-55°C
125°C 25°C
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics
Figure Gate Threshold Variation with Temperature
NDH8436.SAM
Typical Electrical Characteristics (continued)
1.12
NORMALIZED DRAIN-SOURCE BREAKDOWN
1.08
REVERSE DRAIN CURRENT
250µA
125°C 25°C -55°C
1.04
0.96
0.01
0.92
JUNCTION TEMPERATURE (°C)
0.001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature
Figure Body Diode Forward Voltage Variation with Source Current Temperature
2000 GATE-SOURCE VOLTAGE 1500 1000 CAPACITANCE (pF)
5.8A
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
d(on)
toff
td(off)
VOUT
INVERTED
I10%
PULSE WIDTH
Figure Switching Test Circuit
Figure Switching Waveforms
NDH8436.SAM
Typical Electrical Thermal Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
=10V
-55°C 25°C
STEADY-STATE POWER DISSIPATION
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature
Figure SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
DRAIN CURRENT 0.03
STEADY-STATE DRAIN CURRENT
4.5"x5" FR-4 Board Still
SINGLE PULSE Note 25°C
COPPER MOUNTING AREA
0.01
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
TRANSIENT THERMAL RESISTANCE 0.05 0.03 0.02 0.01 0.0001
0.02 0.01 Single Pulse 0.05
Figure Maximum Safe Operating Area
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Duty Cycle, 0.01 TIME (sec)
0.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH8436.SAM
NDH8436.SAM

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